JPS616864A - Thin-film photo-thyristor - Google Patents
Thin-film photo-thyristorInfo
- Publication number
- JPS616864A JPS616864A JP59127903A JP12790384A JPS616864A JP S616864 A JPS616864 A JP S616864A JP 59127903 A JP59127903 A JP 59127903A JP 12790384 A JP12790384 A JP 12790384A JP S616864 A JPS616864 A JP S616864A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- type
- type semiconductor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 19
- 239000000758 substrate Substances 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 229910052804 chromium Inorganic materials 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 229910007709 ZnTe Inorganic materials 0.000 abstract description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 229910052733 gallium Inorganic materials 0.000 abstract description 2
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000003491 array Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 206010028980 Neoplasm Diseases 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はフォトセンサアレーなどに用いられる薄膜光サ
イリスタに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film optical thyristor used in photosensor arrays and the like.
従来例の構成とその問題点
単結晶シリコンを用いたフォトダイオードやフォトトラ
ンジスタが光センサとして広く用いられている。近年イ
メージセンサとして大面積化が要望されており、一般的
なフォトセンサアレートシても大形のものが必要とされ
ているが、ンリコン単結晶は大きさが制約されており、
また高価でもあるので薄膜型のセンサアレーが開発され
ている。−１この種の材料としてアモルファスシリコン
と共に、１ｌ−ＶＩ族化合物半導体が用いられる。■−
■族化合物半導体は容易に薄膜が形成でき、Ｐ−型、Ｎ
−型の制御が出来る為、薄膜トランジスタアレーを形成
することができる。Conventional configurations and their problems Photodiodes and phototransistors using single crystal silicon are widely used as optical sensors. In recent years, there has been a demand for larger area image sensors, and even general photosensor arrays are required to be larger, but NRICON single crystals are limited in size.
Moreover, since it is expensive, a thin film type sensor array has been developed. -1 As this type of material, a 1l-VI group compound semiconductor is used together with amorphous silicon. ■−
Group II compound semiconductors can be easily formed into thin films, and include P-type, N-type
- Since the mold can be controlled, thin film transistor arrays can be formed.
然しなから、■−■族化合物半導体薄膜は多結晶である
ため、単結晶シリコンのフ１ トランジスタに比較する
と光電流が小さかったり、漏れ電流が大きすぎるなどし
て、良好な電流−電圧特性を得られないことが多かった
。However, since the ■-■ group compound semiconductor thin film is polycrystalline, the photocurrent is small and the leakage current is too large compared to single-crystal silicon F1 transistors, making it difficult to maintain good current-voltage characteristics. I often couldn't get it.
発明の目的
本発明は薄膜フォトトランジスタが有する上記の欠点を
解消し、優れた電流−電圧特性を持つ■−■族化合物半
導体の薄膜光サイリスタを提供しようとするものである
。OBJECTS OF THE INVENTION The present invention aims to eliminate the above-mentioned drawbacks of thin film phototransistors and to provide a thin film photothyristor of a ■-■ group compound semiconductor having excellent current-voltage characteristics.
発明の構成
本発明の薄膜サイリスタはＣｄＳ 、 ＣｄＴｅ 、
ＣｄＳｅ・ＺｎＴｅ 、 Ｚｎ５ｅなどの■−■族化合
物半導体を用い、Ｎ−Ｐ−Ｎ−Ｐの４層の薄膜を積層し
て形成したものである。捷たこれらをアレー状に形成し
フォトセンサのアレーとして機能するものである。Structure of the invention The thin film thyristor of the invention is made of CdS, CdTe,
It is formed by laminating four N-P-N-P thin films using a ■-■ group compound semiconductor such as CdSe.ZnTe or Zn5e. These twisted pieces are formed into an array to function as a photo sensor array.
実施例の説明
図面及び実施例を用いて説明する。第１図は本発明によ
る薄膜光サイリスタの構成を示す断面図である。絶縁性
の基板１上の電極３の上にＰ型半導体層４、Ｎ型半導体
層６、Ｐ型半導体層６、Ｎ型半導体層７を順次積層し、
電極３と対をなす電極２とＮ型半導体層８を接続するた
め導電層８を形成する。ここで化合物半導体材料として
は、ＣｄＳ 、 ＣｄＴｅ 、 ＣｄＳｅ 、 Ｚｎ５
ｅ 、 ＺｎＴｅなどのｎ−ｖ＋族化合物半導体を使用
し、それらをＮ型あるいは。DESCRIPTION OF EMBODIMENTS Description will be made using drawings and examples. FIG. 1 is a sectional view showing the structure of a thin film optical thyristor according to the present invention. A P-type semiconductor layer 4, an N-type semiconductor layer 6, a P-type semiconductor layer 6, and an N-type semiconductor layer 7 are sequentially stacked on an electrode 3 on an insulating substrate 1,
A conductive layer 8 is formed to connect the electrode 2 paired with the electrode 3 and the N-type semiconductor layer 8 . Here, as compound semiconductor materials, CdS, CdTe, CdSe, Zn5
e, by using n-v+ group compound semiconductors such as ZnTe, and converting them into N-type or N-type.
Ｐ型にするため不純物としてＡＩ 、 Ｇａ、 Ｉｎ、
Ｃｕ。In order to make it P type, AI, Ga, In,
Cu.
Ｌｉ 、 Ａｕ 、 Ｓｂなどを添加し、蒸着あるいは
スパッタなどの方法で薄膜を形成する。電極２，３はＡ
ｌ。Li, Au, Sb, etc. are added and a thin film is formed by a method such as vapor deposition or sputtering. Electrodes 2 and 3 are A
l.
Ｃｒ、Ｎｉなどをあらかじめ基板１の上に蒸着などの方
法で形成しておく。導電層８も同じ（Ａｌ、Ｃｒ。Cr, Ni, etc. are formed on the substrate 1 in advance by a method such as vapor deposition. The conductive layer 8 is also the same (Al, Cr.
Ｎ１ などを用いる。第１図に示すように導電層８を
電極３と重ならないように配量すれば、入射光は最上層
７の方向から入射させることができる。N1 etc. are used. As shown in FIG. 1, if the conductive layer 8 is arranged so as not to overlap the electrode 3, the incident light can be incident from the direction of the uppermost layer 7.
寸だ基板１として透光性のものを用いれば基板側から光
を入射させることもできる。If a translucent substrate is used as the substrate 1, light can also be incident from the substrate side.
第２図は、本発明による薄膜光サイリスタの他の例を示
す断面図である。第１図との相違点は、４層の半導体層
の第２層にもう一つの電極９を設けたことである。この
電極９をゲート電極として用いることにより光サイリス
タの動作をより安定させることができる。FIG. 2 is a sectional view showing another example of the thin film optical thyristor according to the present invention. The difference from FIG. 1 is that another electrode 9 is provided in the second layer of the four semiconductor layers. By using this electrode 9 as a gate electrode, the operation of the optical thyristor can be made more stable.
４層の半導体薄膜の積層順序は上記のようにＰ−Ｎ−Ｐ
−Ｎとともに、Ｎ−Ｐ−Ｎ−Ｐでも全く同等であること
は言うまでもない。光の入射方向に応じて、適切な構成
を選ぶことができる。The stacking order of the four-layer semiconductor thin film is P-N-P as described above.
It goes without saying that N-P-N-P is completely equivalent to -N. An appropriate configuration can be selected depending on the direction of light incidence.
以上の例において、Ｎ型半導体層としてＡＩ、Ｇａ。In the above examples, AI and Ga are used as the N-type semiconductor layer.
Ｉｎ などを不純物として含むＣｄＳを用い、Ｐ型半導
体層としてＬｉ、 Ｓｂ、 Ｃｕ、 Ａｕ などを不
純物として含むＣｄＴｅを用いると良好なヘテロ接合を
形成するので、これらを４層積層することによシ良い特
性を持つ光サイリスタを形成することができる。腫だＣ
ｄＴｅ １ｉＡ１ 、 Ｉｎなどの添加によりＮ型。By using CdS containing impurities such as In and using CdTe containing impurities such as Li, Sb, Cu, and Au as the P-type semiconductor layer, a good heterojunction is formed. Optical thyristors with good characteristics can be formed. Tumor C
N-type by addition of dTe 1iA1, In, etc.
Ｃｕ、Ｓｂなどの添加によりＰ型の両方の薄膜を容易に
形成できるのでホモ接合からなる４層の光サイリスタを
形成することができる。このことはホモ接合による良好
な特性を期待できるとともに、蒸着、スパッタなどの薄
膜形成の際、連続的な形成を可能にするなどプロセス制
御を容易にし、結果として良い性能を実現することがで
きる。Since both P-type thin films can be easily formed by adding Cu, Sb, etc., a four-layer optical thyristor consisting of a homojunction can be formed. This means that good characteristics can be expected due to homojunction, and when forming thin films by vapor deposition, sputtering, etc., process control is facilitated by enabling continuous formation, and as a result, good performance can be achieved.
本発明による光サイリスタは薄膜であるので、これをア
レー状に形成することは容易である。第３図に示すよう
に薄膜光サイリスタＰ１．Ｐ２．Ｐ３゜・−・、Ｐｎ
をアレー状に形成し、それぞれにスイッチＳ Ｓ Ｓ
・、 Ｓｎ を直列に接続して全１．２，３゜
体を並列に接続する。これに電源Ｅ１負荷抵抗Ｒを直列
に接続し、スイッチを順次切シ替えれば、光サイリスタ
のＯＮ、ＯＦＦに応じた出力信号を出力端子Ｏから取シ
出すことができる。Since the optical thyristor according to the present invention is a thin film, it is easy to form it into an array. As shown in FIG. 3, the thin film optical thyristor P1. P2. P3゜・-・、Pn
are formed in an array, each with a switch S S S
・, Sn are connected in series and all 1.2, 3° bodies are connected in parallel. By connecting the power source E1 and the load resistor R in series and sequentially switching the switches, an output signal corresponding to the ON/OFF state of the optical thyristor can be taken out from the output terminal O.
サイリスタの電流−電圧特性は、ダイオードやトランジ
スタと異なり、フォトセンサとして利用した場合、光の
強度に対する直線性はない。しかしＯＮ状態での光電流
として極めて大きい電流を取り出すことができると同時
にＯＦＦ 状態でのもれ電流が極めて小さい。従って光
信号を１．０の２値として判定するフォトセンサとして
非常に適している。Unlike diodes and transistors, the current-voltage characteristics of a thyristor are not linear with respect to light intensity when used as a photosensor. However, it is possible to extract an extremely large photocurrent in the ON state, and at the same time, the leakage current in the OFF state is extremely small. Therefore, it is very suitable as a photosensor that determines an optical signal as a binary value of 1.0.
発明の効果
以上の説明で明らかなように、本発明によれば、ｎ−■
族化合物半導体のＮ−Ｐ−Ｎ−Ｐ４４層積構造により、
フォトセンサとして優れた性能をもつ薄膜光サイリスタ
を形成することができる。Effects of the Invention As is clear from the above explanation, according to the present invention, n-■
Due to the N-P-N-P44 layered structure of group compound semiconductor,
A thin film optical thyristor with excellent performance as a photosensor can be formed.
第１図および第２図は本発明による薄膜光サイリスタの
構成を示す断面図、第３図は本発明によるアレー状の薄
膜光サイリスタの動作を示す構成図である。
１・・ 基板、２．３・・・・・電極、４，５，６．７
・・ ｎ−ｖｔ族化合物半導体層、８・・・・導電層、
９ゲート電極、Ｐｌ、Ｐ２．・・ Ｐｎ・・・光サイリ
スタ、Ｓｌ、 Ｓ２．−８ｎ−スイッチ、Ｅ ・ 電源
、Ｒ・ ・負荷抵抗、○・・・出力端子。
代理人の氏名 弁理士 中 尾 敏 男 はが１名第２
図
ρ1 and 2 are cross-sectional views showing the configuration of a thin film optical thyristor according to the present invention, and FIG. 3 is a configuration diagram showing the operation of an array-shaped thin film optical thyristor according to the present invention. 1... Substrate, 2.3... Electrode, 4, 5, 6.7
... n-vt group compound semiconductor layer, 8... conductive layer,
9 gate electrodes, Pl, P2. ... Pn... optical thyristor, Sl, S2. -8n- switch, E, power supply, R, load resistance, ○...output terminal. Name of agent: Patent attorney Toshio Nakao, 1st person, 2nd person
Figure ρ
Claims (4)
−Ｎ−Ｐ−Ｎ＿４層の薄膜積層構造よりなる薄膜光サイ
リスタ。(1) N-P-N-P or P of II-VI group compound semiconductor
-N-P-N_A thin film optical thyristor consisting of a 4-layer thin film laminated structure.
りヘテロ接合を有する特許請求の範囲第１項記載の薄膜
光サイリスタ。(2) The thin film optical thyristor according to claim 1, wherein the II-VI group compound semiconductor is made of CdS or CdTe and has a heterojunction.
を有する特許請求の範囲第１項記載の薄膜光サイリスタ
。(3) The thin film optical thyristor according to claim 1, wherein the II-VI group compound semiconductor is CdTe and has a homojunction.
の範囲第１項から第３項のいずれかに記載の薄膜光サイ
リスタ。(4) The thin film optical thyristor according to any one of claims 1 to 3, characterized in that it is formed in an array shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59127903A JPS616864A (en) | 1984-06-21 | 1984-06-21 | Thin-film photo-thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59127903A JPS616864A (en) | 1984-06-21 | 1984-06-21 | Thin-film photo-thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS616864A true JPS616864A (en) | 1986-01-13 |
Family
ID=14971510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59127903A Pending JPS616864A (en) | 1984-06-21 | 1984-06-21 | Thin-film photo-thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS616864A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002099167A1 (en) * | 2001-05-31 | 2002-12-12 | Honeywell International Inc. | Crystalline compositions, radiation detector elements, and methods of formation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4895196A (en) * | 1972-03-16 | 1973-12-06 | ||
| JPS5759380A (en) * | 1980-09-26 | 1982-04-09 | Ricoh Co Ltd | Thin film type thyristor |
-
1984
- 1984-06-21 JP JP59127903A patent/JPS616864A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4895196A (en) * | 1972-03-16 | 1973-12-06 | ||
| JPS5759380A (en) * | 1980-09-26 | 1982-04-09 | Ricoh Co Ltd | Thin film type thyristor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002099167A1 (en) * | 2001-05-31 | 2002-12-12 | Honeywell International Inc. | Crystalline compositions, radiation detector elements, and methods of formation |
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