JPS6464354A - Mos-type solid-state image sensing device - Google Patents
Mos-type solid-state image sensing deviceInfo
- Publication number
- JPS6464354A JPS6464354A JP62220506A JP22050687A JPS6464354A JP S6464354 A JPS6464354 A JP S6464354A JP 62220506 A JP62220506 A JP 62220506A JP 22050687 A JP22050687 A JP 22050687A JP S6464354 A JPS6464354 A JP S6464354A
- Authority
- JP
- Japan
- Prior art keywords
- capacitance element
- metal layer
- polysilicon layer
- mos
- sensing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 229920005591 polysilicon Polymers 0.000 abstract 4
- 239000004020 conductor Substances 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To provide a capacitance element to be formed by the small number of production processes by providing the capacitance element where an end on one side of mutually facing counter end faces is formed by a polysilicon layer for gate electrode use, an end one the other side is formed by a first metal layer and one part or a whole face of an upper face of the counter end faces is covered with a second metal layer. CONSTITUTION:Four conductor layers 13a, 13b, 13c, 13d composed of a first metal layer are deposited on an upper face of a polysilicon layer 12 formed on an upper face of a field oxide film layer; one end each of them is connected to connection parts 14a, 14b, 14c, 14d composed of a second metal layer. One end of the polysilicon layer 12 is connected to a circuit of a block 8; the connection part 14a is connected to the circuit of the block 8. That is to say, the polysilicon layer 12 forms the end on one side of a capacitance element; the conductor layers 13a, 13b, 13c, 13d form one end each on the other side; if two or more conductor layers 13a, 13b, 13c, 13d are connected, the capacitance element of large capacitance is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62220506A JPS6464354A (en) | 1987-09-04 | 1987-09-04 | Mos-type solid-state image sensing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62220506A JPS6464354A (en) | 1987-09-04 | 1987-09-04 | Mos-type solid-state image sensing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6464354A true JPS6464354A (en) | 1989-03-10 |
Family
ID=16752098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62220506A Pending JPS6464354A (en) | 1987-09-04 | 1987-09-04 | Mos-type solid-state image sensing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6464354A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010135509A (en) * | 2008-12-03 | 2010-06-17 | Canon Inc | Imaging apparatus and imaging system |
JP2012199583A (en) * | 2005-09-12 | 2012-10-18 | Intellectual Venturesii Llc | Image sensor with decreased optical interference |
-
1987
- 1987-09-04 JP JP62220506A patent/JPS6464354A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012199583A (en) * | 2005-09-12 | 2012-10-18 | Intellectual Venturesii Llc | Image sensor with decreased optical interference |
JP2010135509A (en) * | 2008-12-03 | 2010-06-17 | Canon Inc | Imaging apparatus and imaging system |
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