JPS57199249A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57199249A
JPS57199249A JP8470681A JP8470681A JPS57199249A JP S57199249 A JPS57199249 A JP S57199249A JP 8470681 A JP8470681 A JP 8470681A JP 8470681 A JP8470681 A JP 8470681A JP S57199249 A JPS57199249 A JP S57199249A
Authority
JP
Japan
Prior art keywords
protrusion
electrode
layer
conductor
change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8470681A
Other languages
Japanese (ja)
Other versions
JPH0132659B2 (en
Inventor
Kazuhiro Otani
Hirohei Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP8470681A priority Critical patent/JPS57199249A/en
Publication of JPS57199249A publication Critical patent/JPS57199249A/en
Publication of JPH0132659B2 publication Critical patent/JPH0132659B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To obtain a constant capacity according to the designed value without being affected by mechanical discrepancy by a method wherein the first protrusion for drawing-out an electrode is provided to one side of one conductor layer and the second protrusion of the this conductor is provided to the opposite side of the first protrusion. CONSTITUTION:A capacitor is composed of the overlapping parts of conductor layers 2 and 4. An electrode drawing-out part 8 is provided to the conductor layer 2 and an electrode drawing-out 9 is provided to the conductor layer 4. A protrusion 19 of the electrode 4 is formed on the opposite side to the first protrusion of the drawing-out part 9. Accordingly, when the descrepancy of relative position between the layer 2 and the layer 4 occurs, respective areas of the overlapping part 10 and overlapping part 20 change but absolute value of the change of each part is identical and the polarity is different, so that the total amount of area change is null and the total area is always constant. Thus the capacity value can be kept constant.
JP8470681A 1981-06-01 1981-06-01 Semiconductor device Granted JPS57199249A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8470681A JPS57199249A (en) 1981-06-01 1981-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8470681A JPS57199249A (en) 1981-06-01 1981-06-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57199249A true JPS57199249A (en) 1982-12-07
JPH0132659B2 JPH0132659B2 (en) 1989-07-10

Family

ID=13838097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8470681A Granted JPS57199249A (en) 1981-06-01 1981-06-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57199249A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63285964A (en) * 1987-05-02 1988-11-22 テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Rc conductor device
US5006480A (en) * 1988-08-08 1991-04-09 Hughes Aircraft Company Metal gate capacitor fabricated with a silicon gate MOS process

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51874U (en) * 1974-06-18 1976-01-06
JPS55500734A (en) * 1979-09-07 1980-10-02
JPS56112750A (en) * 1980-02-12 1981-09-05 Nec Corp Semiconductor capacitive element
JPS56119670A (en) * 1980-02-22 1981-09-19 Shin Meiwa Ind Co Ltd Position detecting sensor of groove weld line
JPS56153777A (en) * 1980-04-28 1981-11-27 Nec Corp Semiconductor capacity element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51874U (en) * 1974-06-18 1976-01-06
JPS55500734A (en) * 1979-09-07 1980-10-02
JPS56112750A (en) * 1980-02-12 1981-09-05 Nec Corp Semiconductor capacitive element
JPS56119670A (en) * 1980-02-22 1981-09-19 Shin Meiwa Ind Co Ltd Position detecting sensor of groove weld line
JPS56153777A (en) * 1980-04-28 1981-11-27 Nec Corp Semiconductor capacity element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63285964A (en) * 1987-05-02 1988-11-22 テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Rc conductor device
US5006480A (en) * 1988-08-08 1991-04-09 Hughes Aircraft Company Metal gate capacitor fabricated with a silicon gate MOS process

Also Published As

Publication number Publication date
JPH0132659B2 (en) 1989-07-10

Similar Documents

Publication Publication Date Title
US4372034B1 (en) Process for forming contact openings through oxide layers
GB1535662A (en) Capacitors
DE2963256D1 (en) Method for forming a laminated structure for highly integrated semiconductor devices with an insulating layer between two conductive layers
FR2323228A1 (en) DIELECTRIC COMPONENT ON A SEMICONDUCTOR WITH AN ELECTROSTATIC LINK AND METHOD FOR MANUFACTURING SUCH A COMPONENT
DE3571895D1 (en) Semiconductor memory device having stacked-capacitor type memory cells and manufacturing method for the same
GB2147423B (en) Electrically measuring coating layers on travelling webs
EP0122459A3 (en) Semiconductor device comprising a diode and a capacitor
FR2494042B1 (en) SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING THE SAME
EP0236123A3 (en) A semiconductor device and method for preparing the same
FR2568085B1 (en) CONDUCTIVE WAFER WITH TWO LAYERS.
GB2110913B (en) Method and device for the continous production of an endless assembly of wafers with a constant width comprised of cream layers between the wafer layers
DE3277345D1 (en) Method of forming electrically conductive patterns on a semiconductor device, and a semiconductor device manufactured by the method
AU579161B2 (en) Process for superposing two photoresist layers
FR2574251B1 (en) PROCESS FOR MAKING A PASTRY WITH AT LEAST TWO LAYERS
GB1532138A (en) Regenerable electrical capacitors
EP0042175A3 (en) Semiconductor device having a semiconductor layer formed on an insulating substrate and method for making the same
JPS57199249A (en) Semiconductor device
EP0114645A3 (en) Temperature sensor
DE3672032D1 (en) SEMICONDUCTOR DEVICE WITH REDUCED CAPACITIVE LOAD AND THEIR PRODUCTION METHOD.
FR2617635B1 (en) METHOD OF CONTACT BETWEEN TWO CONDUCTIVE OR SEMICONDUCTOR LAYERS DEPOSITED ON A SUBSTRATE
DE2966841D1 (en) Method for forming electrical connections between conducting layers in semiconductor structures
GB2156860B (en) Production of layers on plane surfaces
DE3278146D1 (en) Multilayer electrode of a semiconductor device
EP0152082A3 (en) An organic semiconductor electrolyte capacitor and process for producing the same
FR2542705B1 (en) THERMOPLASTIC BAG AND METHOD FOR MANUFACTURING THE SAME