JPS5754480A - Two dimension solid-state image sensor - Google Patents

Two dimension solid-state image sensor

Info

Publication number
JPS5754480A
JPS5754480A JP55129997A JP12999780A JPS5754480A JP S5754480 A JPS5754480 A JP S5754480A JP 55129997 A JP55129997 A JP 55129997A JP 12999780 A JP12999780 A JP 12999780A JP S5754480 A JPS5754480 A JP S5754480A
Authority
JP
Japan
Prior art keywords
electrodes
band shape
image sensor
state image
buses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55129997A
Other languages
Japanese (ja)
Inventor
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55129997A priority Critical patent/JPS5754480A/en
Publication of JPS5754480A publication Critical patent/JPS5754480A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To achieve high circuit integration and to improve the manufacturing yield, by avoiding crossed parts of X and Y buses and introducing one layer electrode construction of wiring. CONSTITUTION:An insulation film 37 is formed on a P type substrate 36a of a band shape constituent 40, and an active region 39 formed on the substrate 36a is limited by an insulation layer 38. Transparent isolating electrodes 46-49 are located on the active region 39, and wells 61-64 are formed by applying a voltage to the electrodes 46-49. Band shape constituents 40a-40d of this constitution are provided in parallel on an N type substrate 36b, electrodes of the equi-potential are connected commonly to make band shape isolating electrodes 51-54, and a video element 1 beneath the electrodes is made to a matrix shape of the isolation gate construction. A prescribed voltage is applied from a horizontal shift register 10 to the transparent band shape conductor, and a prescribed voltage is applied to the band shape constituents 40a-40d from a vertical shift register 20. Thus, crossing parts of X and Y buses of a two-dimension solid-state image sensor are eliminated to integrate circuit highly.
JP55129997A 1980-09-17 1980-09-17 Two dimension solid-state image sensor Pending JPS5754480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55129997A JPS5754480A (en) 1980-09-17 1980-09-17 Two dimension solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55129997A JPS5754480A (en) 1980-09-17 1980-09-17 Two dimension solid-state image sensor

Publications (1)

Publication Number Publication Date
JPS5754480A true JPS5754480A (en) 1982-03-31

Family

ID=15023586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55129997A Pending JPS5754480A (en) 1980-09-17 1980-09-17 Two dimension solid-state image sensor

Country Status (1)

Country Link
JP (1) JPS5754480A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019533302A (en) * 2016-08-31 2019-11-14 ジーレイ スイッツァーランド エスアー Electromagnetic absorption radiation detector composed of charge transport at junction interface

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019533302A (en) * 2016-08-31 2019-11-14 ジーレイ スイッツァーランド エスアー Electromagnetic absorption radiation detector composed of charge transport at junction interface

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