JPS6459216A - Thin film transistor array for liquid crystal display and its manufacture - Google Patents

Thin film transistor array for liquid crystal display and its manufacture

Info

Publication number
JPS6459216A
JPS6459216A JP62216623A JP21662387A JPS6459216A JP S6459216 A JPS6459216 A JP S6459216A JP 62216623 A JP62216623 A JP 62216623A JP 21662387 A JP21662387 A JP 21662387A JP S6459216 A JPS6459216 A JP S6459216A
Authority
JP
Japan
Prior art keywords
thin film
film
source
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62216623A
Other languages
Japanese (ja)
Inventor
Tomio Kashihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62216623A priority Critical patent/JPS6459216A/en
Publication of JPS6459216A publication Critical patent/JPS6459216A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Abstract

PURPOSE:To suppress the generation of a leak current in an off area by extending one-side ends of source and drain electrodes onto a substrate across insulating films provided at least on the flanks of the gate electrode and a semiconductor thin film, and thus constituting a thin film transistor (TR). CONSTITUTION:This transistor array consists of a glass substrate 31, the gate electrode 33 and gate insulating film 34 which are laminated on the substrate 31 in order integrally with column selection lines in the same pattern shape, a semiconductor thin film 37 where source and drain areas 43 and 44 and a channel area 35 are formed, and a source electrode 41 as a picture element electrode and a drain electrode 42 as a column selection line which are each connected at one end side to the source and drain areas 43 and 44 of the semiconductor film 37 through molybdenum films 451 and 452 and also extended at the other end side to the SiO2 film 39 on the substrate 31 while crossing the SiO2 film 39 covering the flanks of the gate electrode 33 and gate insulating film 34 united with the column selection lines, semiconductor thin film 37, and molybdenum films 451 and 452. Consequently, the generation of the leak current in the off area is suppressed.
JP62216623A 1987-08-31 1987-08-31 Thin film transistor array for liquid crystal display and its manufacture Pending JPS6459216A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62216623A JPS6459216A (en) 1987-08-31 1987-08-31 Thin film transistor array for liquid crystal display and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62216623A JPS6459216A (en) 1987-08-31 1987-08-31 Thin film transistor array for liquid crystal display and its manufacture

Publications (1)

Publication Number Publication Date
JPS6459216A true JPS6459216A (en) 1989-03-06

Family

ID=16691335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62216623A Pending JPS6459216A (en) 1987-08-31 1987-08-31 Thin film transistor array for liquid crystal display and its manufacture

Country Status (1)

Country Link
JP (1) JPS6459216A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6490560A (en) * 1987-10-01 1989-04-07 Casio Computer Co Ltd Thin-film transistor
KR100370800B1 (en) * 2000-06-09 2003-02-05 엘지.필립스 엘시디 주식회사 method for fabricating array substrate for LCD
KR100375737B1 (en) * 1999-06-25 2003-03-15 비오이 하이디스 테크놀로지 주식회사 Active matrix -LCD device
KR100482463B1 (en) * 1999-06-25 2005-04-14 비오이 하이디스 테크놀로지 주식회사 LCD improved aperture ratio
JP2007318144A (en) * 2006-05-23 2007-12-06 Beijing Boe Optoelectronics Technology Co Ltd Tft-lcd array substrate structure and its manufacture method
JP2010199570A (en) * 2009-01-28 2010-09-09 Semiconductor Energy Lab Co Ltd Manufacturing method of thin film transistor, and manufacturing method of display

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6014473A (en) * 1983-07-05 1985-01-25 Asahi Glass Co Ltd Electrode structure for thin film transistor
JPS61185783A (en) * 1985-02-13 1986-08-19 シャープ株式会社 Manufacture of thin film transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6014473A (en) * 1983-07-05 1985-01-25 Asahi Glass Co Ltd Electrode structure for thin film transistor
JPS61185783A (en) * 1985-02-13 1986-08-19 シャープ株式会社 Manufacture of thin film transistor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6490560A (en) * 1987-10-01 1989-04-07 Casio Computer Co Ltd Thin-film transistor
KR100375737B1 (en) * 1999-06-25 2003-03-15 비오이 하이디스 테크놀로지 주식회사 Active matrix -LCD device
KR100482463B1 (en) * 1999-06-25 2005-04-14 비오이 하이디스 테크놀로지 주식회사 LCD improved aperture ratio
KR100370800B1 (en) * 2000-06-09 2003-02-05 엘지.필립스 엘시디 주식회사 method for fabricating array substrate for LCD
US6664569B2 (en) 2000-06-09 2003-12-16 Lg. Philips Lcd Co., Ltd. Liquid crystal display device array substrate and method of manufacturing the same
US7075595B2 (en) 2000-06-09 2006-07-11 Lg. Phillips Lcd Co., Ltd. Liquid crystal display device array substrate and method of manufacturing the same
JP2007318144A (en) * 2006-05-23 2007-12-06 Beijing Boe Optoelectronics Technology Co Ltd Tft-lcd array substrate structure and its manufacture method
US8269232B2 (en) 2006-05-23 2012-09-18 Boe Optoelectronics Technology Co., Ltd. TFT LCD array substrate and manufacturing method thereof
JP2010199570A (en) * 2009-01-28 2010-09-09 Semiconductor Energy Lab Co Ltd Manufacturing method of thin film transistor, and manufacturing method of display

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