JPS6292370A - Thin-film transistor - Google Patents

Thin-film transistor

Info

Publication number
JPS6292370A
JPS6292370A JP60231105A JP23110585A JPS6292370A JP S6292370 A JPS6292370 A JP S6292370A JP 60231105 A JP60231105 A JP 60231105A JP 23110585 A JP23110585 A JP 23110585A JP S6292370 A JPS6292370 A JP S6292370A
Authority
JP
Japan
Prior art keywords
wiring
polysilicon
gate
gate wiring
crossed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP60231105A
Other versions
JPH0680828B2 (en
Inventor
Ryoji Oritsuki
Kazuo Shirohashi
Kazuo Sunahara
Kenkichi Suzuki
Masahiko Suzuki
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60231105A priority Critical patent/JPH0680828B2/en
Publication of JPS6292370A publication Critical patent/JPS6292370A/en
Publication of JPH0680828B2 publication Critical patent/JPH0680828B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To miniaturize a forming region for transistor, and to improve the opening ratio of a picture-element electrode by crossing a polysilicon film with a gate wiring many times and constituting the polysilicon thin-film transistor. CONSTITUTION:A polysilicon wiring 3' is bent zigzag four times below a gate wiring 1, and formed crossed through a gate insulating film, and gate electrodes 1c, 1d, 1e, 1f are each shaped to the crossing sections while four channels are formed the polysilicon wiring 3'. According to such constitution, the polysilicon wiring 3; is crossed with the gate wiring 1 many times and zigzagged, thus concentrating and shaping thin-film transistors only to the peripheral section of the gate wiring 1. The polysilicon wiring 3' is crossed with the gate wiring 1 many times, thus easily increasing the number of the channel sections in the crossing sections.
JP60231105A 1985-10-18 1985-10-18 Thin film transistor Expired - Fee Related JPH0680828B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60231105A JPH0680828B2 (en) 1985-10-18 1985-10-18 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60231105A JPH0680828B2 (en) 1985-10-18 1985-10-18 Thin film transistor

Publications (2)

Publication Number Publication Date
JPS6292370A true JPS6292370A (en) 1987-04-27
JPH0680828B2 JPH0680828B2 (en) 1994-10-12

Family

ID=16918374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60231105A Expired - Fee Related JPH0680828B2 (en) 1985-10-18 1985-10-18 Thin film transistor

Country Status (1)

Country Link
JP (1) JPH0680828B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07234418A (en) * 1994-02-24 1995-09-05 G T C:Kk Silicon thin-film transistor structure body and active matrix type liquid crystal display device using the same
US5929464A (en) * 1995-01-20 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-optical device
US6023074A (en) * 1994-06-02 2000-02-08 Semicondutor Energy Laboratory Co., Ltd. Active matrix display having storage capacitor associated with each pixel transistor
US6104067A (en) * 1996-08-02 2000-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6909240B2 (en) 2002-01-18 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US6914642B2 (en) 1995-02-15 2005-07-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
JP2006173600A (en) * 1995-01-03 2006-06-29 Xerox Corp Product
JP2007041612A (en) * 2002-01-18 2007-02-15 Semiconductor Energy Lab Co Ltd Light emission device and electronic equipment
JP2008235912A (en) * 2001-11-09 2008-10-02 Semiconductor Energy Lab Co Ltd Semiconductor device
TWI396911B (en) * 2008-01-08 2013-05-21 Au Optronics Corp Pixel structure
TWI470327B (en) * 2008-01-08 2015-01-21 Au Optronics Corp Pixel structure
US8975632B2 (en) 2002-06-05 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9054199B2 (en) 2001-11-09 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US10461140B2 (en) 2018-02-13 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07234418A (en) * 1994-02-24 1995-09-05 G T C:Kk Silicon thin-film transistor structure body and active matrix type liquid crystal display device using the same
US6495858B1 (en) 1994-06-02 2002-12-17 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having thin film transistors
US6885027B2 (en) 1994-06-02 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US6023074A (en) * 1994-06-02 2000-02-08 Semicondutor Energy Laboratory Co., Ltd. Active matrix display having storage capacitor associated with each pixel transistor
US6259117B1 (en) 1994-06-02 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Active matrix display having storage capacitor associated with each pixel transistor
US6297518B1 (en) 1994-06-02 2001-10-02 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US7459724B2 (en) 1994-06-02 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US7148506B2 (en) 1994-06-02 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
JP2006173600A (en) * 1995-01-03 2006-06-29 Xerox Corp Product
JP4648829B2 (en) * 1995-01-03 2011-03-09 ゼロックス コーポレイションXerox Corporation Product
JP2010153912A (en) * 1995-01-03 2010-07-08 Xerox Corp Array and product
US5929464A (en) * 1995-01-20 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-optical device
US6914642B2 (en) 1995-02-15 2005-07-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6104067A (en) * 1996-08-02 2000-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013033280A (en) * 2001-11-09 2013-02-14 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2008235912A (en) * 2001-11-09 2008-10-02 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2016136641A (en) * 2001-11-09 2016-07-28 株式会社半導体エネルギー研究所 Light-emitting device
JP2015179853A (en) * 2001-11-09 2015-10-08 株式会社半導体エネルギー研究所 light-emitting device
US9905624B2 (en) 2001-11-09 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2018019084A (en) * 2001-11-09 2018-02-01 株式会社半導体エネルギー研究所 Light-emitting device
US9054199B2 (en) 2001-11-09 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9577016B2 (en) 2001-11-09 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2014082499A (en) * 2001-11-09 2014-05-08 Semiconductor Energy Lab Co Ltd Light-emitting device
JP2007041612A (en) * 2002-01-18 2007-02-15 Semiconductor Energy Lab Co Ltd Light emission device and electronic equipment
JP2012150483A (en) * 2002-01-18 2012-08-09 Semiconductor Energy Lab Co Ltd Light emitting device, and module
US6909240B2 (en) 2002-01-18 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2012083771A (en) * 2002-01-18 2012-04-26 Semiconductor Energy Lab Co Ltd Light-emitting device
JP4490403B2 (en) * 2002-01-18 2010-06-23 株式会社半導体エネルギー研究所 Light emitting device
JP2010002938A (en) * 2002-01-18 2010-01-07 Semiconductor Energy Lab Co Ltd Light emitting device
US7262556B2 (en) 2002-01-18 2007-08-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8975632B2 (en) 2002-06-05 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293477B2 (en) 2002-06-05 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10062742B2 (en) 2002-06-05 2018-08-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9859353B2 (en) 2002-06-05 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI396911B (en) * 2008-01-08 2013-05-21 Au Optronics Corp Pixel structure
TWI470327B (en) * 2008-01-08 2015-01-21 Au Optronics Corp Pixel structure
US10461140B2 (en) 2018-02-13 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device

Also Published As

Publication number Publication date
JPH0680828B2 (en) 1994-10-12

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees