JPS6472121A - Active matrix type liquid crystal device - Google Patents

Active matrix type liquid crystal device

Info

Publication number
JPS6472121A
JPS6472121A JP22875487A JP22875487A JPS6472121A JP S6472121 A JPS6472121 A JP S6472121A JP 22875487 A JP22875487 A JP 22875487A JP 22875487 A JP22875487 A JP 22875487A JP S6472121 A JPS6472121 A JP S6472121A
Authority
JP
Japan
Prior art keywords
bus line
conductive film
gate bus
light
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22875487A
Other languages
Japanese (ja)
Other versions
JPH07111521B2 (en
Inventor
Teruhiko Ichimura
Satoru Kawai
Hideaki Takizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22875487A priority Critical patent/JPH07111521B2/en
Publication of JPS6472121A publication Critical patent/JPS6472121A/en
Publication of JPH07111521B2 publication Critical patent/JPH07111521B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To prevent the voltage of a picture element electrode from varying and a leak current from being generated by coating a drain bus line, a gate bus line, and a thin film transistor (TR) with a light-shielding conductive film across a protective insulating film, and connecting the conductive film to the gate bus line in precedent scanning order. CONSTITUTION:The light-shielding conductive film 7 is formed on the drain bus line 2, gate bus line 3, and thin film transistor (TFT) 4 which are formed on an insulating substrate like a glass substrate 1 across the protective insulating film 5. Further, this conductive film 7 is connected to the gate bus line 3 in precedent scanning order. Consequently, the voltage variation of the picture electrode 6 due to capacity coupling can be suppressed and the generation of a leak current due to the light of the TFT 4 is precluded, so operation characteristics are stabilized and fine voltage control for obtaining a sharp image is facilitated. Further, black stripes are arranged for respective picture elements, so the image becomes sharp.
JP22875487A 1987-09-11 1987-09-11 Active matrix liquid crystal display device Expired - Lifetime JPH07111521B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22875487A JPH07111521B2 (en) 1987-09-11 1987-09-11 Active matrix liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22875487A JPH07111521B2 (en) 1987-09-11 1987-09-11 Active matrix liquid crystal display device

Publications (2)

Publication Number Publication Date
JPS6472121A true JPS6472121A (en) 1989-03-17
JPH07111521B2 JPH07111521B2 (en) 1995-11-29

Family

ID=16881304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22875487A Expired - Lifetime JPH07111521B2 (en) 1987-09-11 1987-09-11 Active matrix liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH07111521B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0464897A2 (en) * 1990-06-27 1992-01-08 Philips Electronics Uk Limited Active matrix liquid crystal display devices
US5426313A (en) * 1993-04-22 1995-06-20 Nec Corporation Thin film transistor array having optical shield layer
US5508765A (en) * 1990-07-25 1996-04-16 Mitsubishi Denki Kabushiki Kaisha Matrix-addressed type display device
JPH08160451A (en) * 1994-12-05 1996-06-21 Furontetsuku:Kk Active matrix liquid crystal display element
KR100574577B1 (en) * 1996-05-08 2006-04-28 샤프 가부시키가이샤 Liquid crystal electro-optical display device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595229A (en) * 1982-07-01 1984-01-12 Asahi Glass Co Ltd Image display device
JPS61134785A (en) * 1984-12-06 1986-06-21 松下電器産業株式会社 Image display unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595229A (en) * 1982-07-01 1984-01-12 Asahi Glass Co Ltd Image display device
JPS61134785A (en) * 1984-12-06 1986-06-21 松下電器産業株式会社 Image display unit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0464897A2 (en) * 1990-06-27 1992-01-08 Philips Electronics Uk Limited Active matrix liquid crystal display devices
EP0464897A3 (en) * 1990-06-27 1992-08-12 Philips Electronics Uk Limited Active matrix liquid crystal display devices
US5508765A (en) * 1990-07-25 1996-04-16 Mitsubishi Denki Kabushiki Kaisha Matrix-addressed type display device
US5426313A (en) * 1993-04-22 1995-06-20 Nec Corporation Thin film transistor array having optical shield layer
JPH08160451A (en) * 1994-12-05 1996-06-21 Furontetsuku:Kk Active matrix liquid crystal display element
KR100574577B1 (en) * 1996-05-08 2006-04-28 샤프 가부시키가이샤 Liquid crystal electro-optical display device

Also Published As

Publication number Publication date
JPH07111521B2 (en) 1995-11-29

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