JPS575375A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS575375A
JPS575375A JP7982780A JP7982780A JPS575375A JP S575375 A JPS575375 A JP S575375A JP 7982780 A JP7982780 A JP 7982780A JP 7982780 A JP7982780 A JP 7982780A JP S575375 A JPS575375 A JP S575375A
Authority
JP
Japan
Prior art keywords
znte
cdse
cdte
cds
transparent conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7982780A
Other languages
Japanese (ja)
Inventor
Koji Mori
Masakuni Itagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP7982780A priority Critical patent/JPS575375A/en
Publication of JPS575375A publication Critical patent/JPS575375A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To decrease the leakage current of a photoelectric coverter and to accelerate the light responding speed by forming a transparent conductive film on a light transmissive substrate and sequentially laminating substances having suitable band gap thereon. CONSTITUTION:The II-VI group compound film 4, the VI group element film 5 and pair electrodes 6 are sequentially laminated by sputtering method or vacuum deposition method or the like on a transparent conductive film 2 formed on a light transmissive substrate 1. The combination of the films 3 and 4 includes CdS-CdTE, CdSe-CdTe, ZnTe-CdTe, CdS-ZnTe, CdSe-ZnTe, CdS-CdSe, etc.
JP7982780A 1980-06-13 1980-06-13 Photoelectric converter Pending JPS575375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7982780A JPS575375A (en) 1980-06-13 1980-06-13 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7982780A JPS575375A (en) 1980-06-13 1980-06-13 Photoelectric converter

Publications (1)

Publication Number Publication Date
JPS575375A true JPS575375A (en) 1982-01-12

Family

ID=13701038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7982780A Pending JPS575375A (en) 1980-06-13 1980-06-13 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS575375A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009012345A2 (en) * 2007-07-16 2009-01-22 Ascent Solar Technologies, Inc. Hybrid multi-junction photovoltaic cells and associated methods

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009012345A2 (en) * 2007-07-16 2009-01-22 Ascent Solar Technologies, Inc. Hybrid multi-junction photovoltaic cells and associated methods
WO2009012345A3 (en) * 2007-07-16 2009-10-22 Ascent Solar Technologies, Inc. Hybrid multi-junction photovoltaic cells and associated methods
US9349905B2 (en) 2007-07-16 2016-05-24 Ascent Solar Technologies, Inc. Hybrid multi-junction photovoltaic cells and associated methods
US9640706B2 (en) 2007-07-16 2017-05-02 Ascent Solar Technologies, Inc Hybrid multi-junction photovoltaic cells and associated methods

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