JPS575374A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS575374A
JPS575374A JP7951280A JP7951280A JPS575374A JP S575374 A JPS575374 A JP S575374A JP 7951280 A JP7951280 A JP 7951280A JP 7951280 A JP7951280 A JP 7951280A JP S575374 A JPS575374 A JP S575374A
Authority
JP
Japan
Prior art keywords
type
thickness
refractive index
layer
photoelectric converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7951280A
Other languages
Japanese (ja)
Other versions
JPS6159680B2 (en
Inventor
Kotaro Mitsui
Susumu Yoshida
Takao Oda
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7951280A priority Critical patent/JPS575374A/en
Publication of JPS575374A publication Critical patent/JPS575374A/en
Publication of JPS6159680B2 publication Critical patent/JPS6159680B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To enhance the efficiency of a photoelectric converter and to increase the reliability of the converter by forming the first and the second thin films specified in the refractive index and the thickness on a light incident surface. CONSTITUTION:In a solar battery 21, the first thin film 8 having 1.8-2.5 of refractive index and 600-900Angstrom of thickness, e.g., an Si3N4 film is formed on the surface of a P type Ga1-XAlXAs layer 4 having an N type GaAs layer 1, a P type GaAs layer 2, a P-N junction 3, a P type GA1-XAlXAs layer 4, an N type electrode 5 and a P type electrode 6, and the second thin film 9, e.g., an SiO2 film having less than 1.5 of refractive index and 5,000-50,000Angstrom of thickness is formed further thereon.
JP7951280A 1980-06-11 1980-06-11 Photoelectric converter Granted JPS575374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7951280A JPS575374A (en) 1980-06-11 1980-06-11 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7951280A JPS575374A (en) 1980-06-11 1980-06-11 Photoelectric converter

Publications (2)

Publication Number Publication Date
JPS575374A true JPS575374A (en) 1982-01-12
JPS6159680B2 JPS6159680B2 (en) 1986-12-17

Family

ID=13692009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7951280A Granted JPS575374A (en) 1980-06-11 1980-06-11 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS575374A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200473A (en) * 1983-04-27 1984-11-13 Nec Corp Photodetector
JP2002270879A (en) * 2001-03-14 2002-09-20 Mitsubishi Electric Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200473A (en) * 1983-04-27 1984-11-13 Nec Corp Photodetector
JPS6367343B2 (en) * 1983-04-27 1988-12-26 Nippon Electric Co
JP2002270879A (en) * 2001-03-14 2002-09-20 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6159680B2 (en) 1986-12-17

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