JPS57130482A - Mis type photoelectric transducer - Google Patents
Mis type photoelectric transducerInfo
- Publication number
- JPS57130482A JPS57130482A JP56016133A JP1613381A JPS57130482A JP S57130482 A JPS57130482 A JP S57130482A JP 56016133 A JP56016133 A JP 56016133A JP 1613381 A JP1613381 A JP 1613381A JP S57130482 A JPS57130482 A JP S57130482A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- shaped
- mis type
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 abstract 5
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000001579 optical reflectometry Methods 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To reduce the optical reflectivity of the device having MIS type structure, and to improve the efficiency of photoelectric conversion by forming a V-shaped or trapezoid groove to the upper surface of a beam irradiating section in the device in which an opposite electrode is shaped onto a reverse conductive layer through an insulating thin-film. CONSTITUTION:A P<+> layer 11 and an N layer 7 is approximately 20-500Angstrom are diffused to a substrate such as a P type Si substrate 1 having a (100) face orientation, oxide film masks 21-23 are formed, the surface is etched in an anisotropic shape, and the grooves, convex sections thereof have the N layer 7, are shaped. The oxide films are removed, the surface is coated with a plasma nitride film 3 with 15-25Angstrom thickness, the opposite electrode 5 and a drawing electrode 21 are molded onto the film 3 of a flat section, and a back electrode 2 is formed. The surface is coated with a reflection preventive film 10, the one part is removed, a lead 32 is connected, and the MIS type device, the beam irradiating surface thereof has the numberless grooves, is obtained. Accordingly, the efficiency of photoelectric conversion can be improved by approximately twenty percent because the reflectivity of incident light can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56016133A JPS57130482A (en) | 1981-02-05 | 1981-02-05 | Mis type photoelectric transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56016133A JPS57130482A (en) | 1981-02-05 | 1981-02-05 | Mis type photoelectric transducer |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4225070A Division JP2588464B2 (en) | 1992-07-31 | 1992-07-31 | Photoelectric conversion device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57130482A true JPS57130482A (en) | 1982-08-12 |
JPH0562473B2 JPH0562473B2 (en) | 1993-09-08 |
Family
ID=11907986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56016133A Granted JPS57130482A (en) | 1981-02-05 | 1981-02-05 | Mis type photoelectric transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57130482A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62106670A (en) * | 1985-11-05 | 1987-05-18 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
JPH04211179A (en) * | 1991-03-27 | 1992-08-03 | Kanegafuchi Chem Ind Co Ltd | Switching element |
JP2007305978A (en) * | 2006-04-14 | 2007-11-22 | Sharp Corp | Solar cell, solar cell module using the solar cell, and method for manufacturing the solar cell module |
JP2009130041A (en) * | 2007-11-21 | 2009-06-11 | Sharp Corp | Photoelectric conversion element and its manufacturing method |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4832946A (en) * | 1971-08-31 | 1973-05-04 | ||
JPS5289489A (en) * | 1975-12-18 | 1977-07-27 | Nasa | Solar battery and method of improving efficiency thereof |
JPS5425187A (en) * | 1977-07-28 | 1979-02-24 | Rca Corp | Photoelectric semiconductor |
JPS5472977A (en) * | 1977-11-18 | 1979-06-11 | Stanford Res Inst Int | Method of forming controlled crystalline semiconductor material surface pattern |
JPS5473587A (en) * | 1977-11-24 | 1979-06-12 | Sharp Corp | Thin film solar battery device |
JPS5559784A (en) * | 1978-10-23 | 1980-05-06 | Hezel Rudolf | Soalr battery |
JPS561764U (en) * | 1979-06-15 | 1981-01-09 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52140857A (en) * | 1976-05-19 | 1977-11-24 | Matsushita Electric Ind Co Ltd | Chip resistor element and method of making same |
-
1981
- 1981-02-05 JP JP56016133A patent/JPS57130482A/en active Granted
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4832946A (en) * | 1971-08-31 | 1973-05-04 | ||
JPS5289489A (en) * | 1975-12-18 | 1977-07-27 | Nasa | Solar battery and method of improving efficiency thereof |
JPS5425187A (en) * | 1977-07-28 | 1979-02-24 | Rca Corp | Photoelectric semiconductor |
JPS5472977A (en) * | 1977-11-18 | 1979-06-11 | Stanford Res Inst Int | Method of forming controlled crystalline semiconductor material surface pattern |
JPS5473587A (en) * | 1977-11-24 | 1979-06-12 | Sharp Corp | Thin film solar battery device |
JPS5559784A (en) * | 1978-10-23 | 1980-05-06 | Hezel Rudolf | Soalr battery |
JPS561764U (en) * | 1979-06-15 | 1981-01-09 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62106670A (en) * | 1985-11-05 | 1987-05-18 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
JPH04211179A (en) * | 1991-03-27 | 1992-08-03 | Kanegafuchi Chem Ind Co Ltd | Switching element |
JP2007305978A (en) * | 2006-04-14 | 2007-11-22 | Sharp Corp | Solar cell, solar cell module using the solar cell, and method for manufacturing the solar cell module |
JP2009130041A (en) * | 2007-11-21 | 2009-06-11 | Sharp Corp | Photoelectric conversion element and its manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JPH0562473B2 (en) | 1993-09-08 |
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