JPS57130482A - Mis type photoelectric transducer - Google Patents

Mis type photoelectric transducer

Info

Publication number
JPS57130482A
JPS57130482A JP56016133A JP1613381A JPS57130482A JP S57130482 A JPS57130482 A JP S57130482A JP 56016133 A JP56016133 A JP 56016133A JP 1613381 A JP1613381 A JP 1613381A JP S57130482 A JPS57130482 A JP S57130482A
Authority
JP
Japan
Prior art keywords
film
layer
shaped
mis type
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56016133A
Other languages
Japanese (ja)
Other versions
JPH0562473B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP56016133A priority Critical patent/JPS57130482A/en
Publication of JPS57130482A publication Critical patent/JPS57130482A/en
Publication of JPH0562473B2 publication Critical patent/JPH0562473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To reduce the optical reflectivity of the device having MIS type structure, and to improve the efficiency of photoelectric conversion by forming a V-shaped or trapezoid groove to the upper surface of a beam irradiating section in the device in which an opposite electrode is shaped onto a reverse conductive layer through an insulating thin-film. CONSTITUTION:A P<+> layer 11 and an N layer 7 is approximately 20-500Angstrom are diffused to a substrate such as a P type Si substrate 1 having a (100) face orientation, oxide film masks 21-23 are formed, the surface is etched in an anisotropic shape, and the grooves, convex sections thereof have the N layer 7, are shaped. The oxide films are removed, the surface is coated with a plasma nitride film 3 with 15-25Angstrom thickness, the opposite electrode 5 and a drawing electrode 21 are molded onto the film 3 of a flat section, and a back electrode 2 is formed. The surface is coated with a reflection preventive film 10, the one part is removed, a lead 32 is connected, and the MIS type device, the beam irradiating surface thereof has the numberless grooves, is obtained. Accordingly, the efficiency of photoelectric conversion can be improved by approximately twenty percent because the reflectivity of incident light can be reduced.
JP56016133A 1981-02-05 1981-02-05 Mis type photoelectric transducer Granted JPS57130482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56016133A JPS57130482A (en) 1981-02-05 1981-02-05 Mis type photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56016133A JPS57130482A (en) 1981-02-05 1981-02-05 Mis type photoelectric transducer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4225070A Division JP2588464B2 (en) 1992-07-31 1992-07-31 Photoelectric conversion device

Publications (2)

Publication Number Publication Date
JPS57130482A true JPS57130482A (en) 1982-08-12
JPH0562473B2 JPH0562473B2 (en) 1993-09-08

Family

ID=11907986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56016133A Granted JPS57130482A (en) 1981-02-05 1981-02-05 Mis type photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS57130482A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62106670A (en) * 1985-11-05 1987-05-18 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPH04211179A (en) * 1991-03-27 1992-08-03 Kanegafuchi Chem Ind Co Ltd Switching element
JP2007305978A (en) * 2006-04-14 2007-11-22 Sharp Corp Solar cell, solar cell module using the solar cell, and method for manufacturing the solar cell module
JP2009130041A (en) * 2007-11-21 2009-06-11 Sharp Corp Photoelectric conversion element and its manufacturing method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832946A (en) * 1971-08-31 1973-05-04
JPS5289489A (en) * 1975-12-18 1977-07-27 Nasa Solar battery and method of improving efficiency thereof
JPS5425187A (en) * 1977-07-28 1979-02-24 Rca Corp Photoelectric semiconductor
JPS5472977A (en) * 1977-11-18 1979-06-11 Stanford Res Inst Int Method of forming controlled crystalline semiconductor material surface pattern
JPS5473587A (en) * 1977-11-24 1979-06-12 Sharp Corp Thin film solar battery device
JPS5559784A (en) * 1978-10-23 1980-05-06 Hezel Rudolf Soalr battery
JPS561764U (en) * 1979-06-15 1981-01-09

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52140857A (en) * 1976-05-19 1977-11-24 Matsushita Electric Ind Co Ltd Chip resistor element and method of making same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832946A (en) * 1971-08-31 1973-05-04
JPS5289489A (en) * 1975-12-18 1977-07-27 Nasa Solar battery and method of improving efficiency thereof
JPS5425187A (en) * 1977-07-28 1979-02-24 Rca Corp Photoelectric semiconductor
JPS5472977A (en) * 1977-11-18 1979-06-11 Stanford Res Inst Int Method of forming controlled crystalline semiconductor material surface pattern
JPS5473587A (en) * 1977-11-24 1979-06-12 Sharp Corp Thin film solar battery device
JPS5559784A (en) * 1978-10-23 1980-05-06 Hezel Rudolf Soalr battery
JPS561764U (en) * 1979-06-15 1981-01-09

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62106670A (en) * 1985-11-05 1987-05-18 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPH04211179A (en) * 1991-03-27 1992-08-03 Kanegafuchi Chem Ind Co Ltd Switching element
JP2007305978A (en) * 2006-04-14 2007-11-22 Sharp Corp Solar cell, solar cell module using the solar cell, and method for manufacturing the solar cell module
JP2009130041A (en) * 2007-11-21 2009-06-11 Sharp Corp Photoelectric conversion element and its manufacturing method

Also Published As

Publication number Publication date
JPH0562473B2 (en) 1993-09-08

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