JPS5773984A - Manufacture of photodetector - Google Patents

Manufacture of photodetector

Info

Publication number
JPS5773984A
JPS5773984A JP55150929A JP15092980A JPS5773984A JP S5773984 A JPS5773984 A JP S5773984A JP 55150929 A JP55150929 A JP 55150929A JP 15092980 A JP15092980 A JP 15092980A JP S5773984 A JPS5773984 A JP S5773984A
Authority
JP
Japan
Prior art keywords
substrate
approx
thickness
groove
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55150929A
Other languages
Japanese (ja)
Inventor
Mitsuo Yoshikawa
Shigeki Hamashima
Hiroshi Takigawa
Michiharu Ito
Tomoshi Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55150929A priority Critical patent/JPS5773984A/en
Publication of JPS5773984A publication Critical patent/JPS5773984A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/157CCD or CID infrared image sensors
    • H10F39/1575CCD or CID infrared image sensors of the hybrid type

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To avoid the crack of a compound semiconductor substrate by opposing a photodetector formed with a P-N junction in the substrate and a charge transfer element formed on an Si substrate, connecting the inputs thereof, and forming a corroded groove on the compound substrate in advance when the compound substrate is reduced in thickness. CONSTITUTION:A photoresist film 11 is formed at each of both ends of a phototector forming region on a P type Hg1-xCdxTe substrate 1 having a thickness of approx. 300mum, and the element forming region is only etched and removed at approx. 15mum with mixture solution of Br, CH3OH. Then, a resist film 12 is covered thereon, the groove 13 forming region is removed, and the groove 13 is formed in the depth of approx. 20mum. Thereafter, an Si substrate 4 having N type regions 6 of the same number is opposed with the region, and the regions 6 are connected to the regions 2 via In metal posts 7 and the P-N junction 3. Them the back surface of the substrate 1 is polished to expose the bottom surface, C thereby reducing the thickness of the substrate 1.
JP55150929A 1980-10-27 1980-10-27 Manufacture of photodetector Pending JPS5773984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150929A JPS5773984A (en) 1980-10-27 1980-10-27 Manufacture of photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150929A JPS5773984A (en) 1980-10-27 1980-10-27 Manufacture of photodetector

Publications (1)

Publication Number Publication Date
JPS5773984A true JPS5773984A (en) 1982-05-08

Family

ID=15507488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150929A Pending JPS5773984A (en) 1980-10-27 1980-10-27 Manufacture of photodetector

Country Status (1)

Country Link
JP (1) JPS5773984A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4566024A (en) * 1982-03-12 1986-01-21 Societe Anonyme De Telecommunications Matrix infrared detector
US4660066A (en) * 1982-09-08 1987-04-21 Texas Instruments Incorporated Structure for packaging focal plane imagers and signal processing circuits
JPS62165972A (en) * 1986-01-17 1987-07-22 Fujitsu Ltd Semiconductor image pickup device
US4695861A (en) * 1985-10-21 1987-09-22 Honeywell Inc. Backside mosaic photoconductive infrared detector array
US4720738A (en) * 1982-09-08 1988-01-19 Texas Instruments Incorporated Focal plane array structure including a signal processing system
US5227656A (en) * 1990-11-06 1993-07-13 Cincinnati Electronics Corporation Electro-optical detector array
FR2818443A1 (en) * 2000-12-20 2002-06-21 Sagem METHOD FOR MANUFACTURING INFRARED MATRIX DETECTOR WITH LIGHTING FROM THE REAR PANEL

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4566024A (en) * 1982-03-12 1986-01-21 Societe Anonyme De Telecommunications Matrix infrared detector
US4660066A (en) * 1982-09-08 1987-04-21 Texas Instruments Incorporated Structure for packaging focal plane imagers and signal processing circuits
US4720738A (en) * 1982-09-08 1988-01-19 Texas Instruments Incorporated Focal plane array structure including a signal processing system
US4695861A (en) * 1985-10-21 1987-09-22 Honeywell Inc. Backside mosaic photoconductive infrared detector array
JPS62165972A (en) * 1986-01-17 1987-07-22 Fujitsu Ltd Semiconductor image pickup device
US5227656A (en) * 1990-11-06 1993-07-13 Cincinnati Electronics Corporation Electro-optical detector array
US5304500A (en) * 1990-11-06 1994-04-19 Cincinnati Electronics Corporation Method of making electro-optical detector array
FR2818443A1 (en) * 2000-12-20 2002-06-21 Sagem METHOD FOR MANUFACTURING INFRARED MATRIX DETECTOR WITH LIGHTING FROM THE REAR PANEL

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