JPS5731171A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5731171A JPS5731171A JP10592280A JP10592280A JPS5731171A JP S5731171 A JPS5731171 A JP S5731171A JP 10592280 A JP10592280 A JP 10592280A JP 10592280 A JP10592280 A JP 10592280A JP S5731171 A JPS5731171 A JP S5731171A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- collector
- approximately
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To facilitate the photoetching process of an electrode, by a method wherein the electrode is taken out easily and from a wide region by providing a well which has a difference in level. CONSTITUTION:A large concavity and a shallow concavity of approximately 5mum deep inside the former large one are composed on an Si substrate 1 by anisotropic etching. MgO.Al2O3 2, N type Si 3 of approximately 5mum thick and N<+> type Si 4 are piled up. The layer 2 is exposed by polishing odd Si layer out. Then, as usual, a P base 6 and an N emitter 7 are formed in the N<+> Si layer 4 and the device is completed. With above configuration, as an N<+> collector connecting layer 5 is formed on the surface of the substrate, a diffusion process to form the collector connection layer is eliminated, and as a wide region for taking out a collector electrode is provided, accuracy of masking, etc., can be moderated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10592280A JPS5731171A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10592280A JPS5731171A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5731171A true JPS5731171A (en) | 1982-02-19 |
JPS6328342B2 JPS6328342B2 (en) | 1988-06-08 |
Family
ID=14420349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10592280A Granted JPS5731171A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5731171A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63126243A (en) * | 1986-11-17 | 1988-05-30 | Toshiba Corp | Integrated circuit element and manufacture thereof |
-
1980
- 1980-07-31 JP JP10592280A patent/JPS5731171A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63126243A (en) * | 1986-11-17 | 1988-05-30 | Toshiba Corp | Integrated circuit element and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS6328342B2 (en) | 1988-06-08 |
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