JPS5731171A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5731171A
JPS5731171A JP10592280A JP10592280A JPS5731171A JP S5731171 A JPS5731171 A JP S5731171A JP 10592280 A JP10592280 A JP 10592280A JP 10592280 A JP10592280 A JP 10592280A JP S5731171 A JPS5731171 A JP S5731171A
Authority
JP
Japan
Prior art keywords
layer
electrode
collector
approximately
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10592280A
Other languages
Japanese (ja)
Other versions
JPS6328342B2 (en
Inventor
Takaaki Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10592280A priority Critical patent/JPS5731171A/en
Publication of JPS5731171A publication Critical patent/JPS5731171A/en
Publication of JPS6328342B2 publication Critical patent/JPS6328342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To facilitate the photoetching process of an electrode, by a method wherein the electrode is taken out easily and from a wide region by providing a well which has a difference in level. CONSTITUTION:A large concavity and a shallow concavity of approximately 5mum deep inside the former large one are composed on an Si substrate 1 by anisotropic etching. MgO.Al2O3 2, N type Si 3 of approximately 5mum thick and N<+> type Si 4 are piled up. The layer 2 is exposed by polishing odd Si layer out. Then, as usual, a P base 6 and an N emitter 7 are formed in the N<+> Si layer 4 and the device is completed. With above configuration, as an N<+> collector connecting layer 5 is formed on the surface of the substrate, a diffusion process to form the collector connection layer is eliminated, and as a wide region for taking out a collector electrode is provided, accuracy of masking, etc., can be moderated.
JP10592280A 1980-07-31 1980-07-31 Semiconductor device Granted JPS5731171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10592280A JPS5731171A (en) 1980-07-31 1980-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10592280A JPS5731171A (en) 1980-07-31 1980-07-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5731171A true JPS5731171A (en) 1982-02-19
JPS6328342B2 JPS6328342B2 (en) 1988-06-08

Family

ID=14420349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10592280A Granted JPS5731171A (en) 1980-07-31 1980-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5731171A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63126243A (en) * 1986-11-17 1988-05-30 Toshiba Corp Integrated circuit element and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63126243A (en) * 1986-11-17 1988-05-30 Toshiba Corp Integrated circuit element and manufacture thereof

Also Published As

Publication number Publication date
JPS6328342B2 (en) 1988-06-08

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