JPS5529176A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5529176A
JPS5529176A JP10309478A JP10309478A JPS5529176A JP S5529176 A JPS5529176 A JP S5529176A JP 10309478 A JP10309478 A JP 10309478A JP 10309478 A JP10309478 A JP 10309478A JP S5529176 A JPS5529176 A JP S5529176A
Authority
JP
Japan
Prior art keywords
wafer
taper
dicing
saw
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10309478A
Other languages
Japanese (ja)
Inventor
Hiroshi Asami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP10309478A priority Critical patent/JPS5529176A/en
Publication of JPS5529176A publication Critical patent/JPS5529176A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain semiconductor pellets without damaging the inclined surface irrespective of the crystal orientation of the wafer by using the dicing saw having the taper form with a flat head in cross section, when dividing the semiconductor wafer into multiple pellets through a dicing. CONSTITUTION:A wafer 11 including multiple semiconductor elements is secured on a supporter 12 made of a quartz plate with the aid of wax and the like. A corrosion resisting cover 13 such as light wax is coated on the exposed surface of the wafer. Then, the wafer 11 is cut down by use of a dicing saw 14 having the taper form with a flat head in cross section almost therethrough form above of the cover 13 so as to separate each element 11a from each other by grooves 15 in the form of trapezoid. In such a manner, inclined surfaces 16 are formed at the sides of each element 11a corresponding to the inclined angle of a taper portion 14a of the saw 14. Finally, machined distorsion layers 18 produced on the inclined surfaces and flat surfaces 17 at the bottom of grooves 15 are removed through an etching by use of hydro fluoric acidnitric acid solution.
JP10309478A 1978-08-23 1978-08-23 Manufacturing of semiconductor device Pending JPS5529176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10309478A JPS5529176A (en) 1978-08-23 1978-08-23 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10309478A JPS5529176A (en) 1978-08-23 1978-08-23 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5529176A true JPS5529176A (en) 1980-03-01

Family

ID=14345039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10309478A Pending JPS5529176A (en) 1978-08-23 1978-08-23 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5529176A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602727A (en) * 1983-06-14 1985-01-09 東レ株式会社 Synthetic fiber yarn having pattern and production thereof
JPS602735A (en) * 1983-06-14 1985-01-09 東レ株式会社 Production of spun-like processed yarn
US4839300A (en) * 1985-12-20 1989-06-13 Seiko Instruments & Electronics Ltd. Method of manufacturing semiconductor device having trapezoidal shaped substrate sections
US5358590A (en) * 1992-04-08 1994-10-25 Sony Corporation Method of manufacturing individual element arrays
JP2007142228A (en) * 2005-11-21 2007-06-07 Fuji Electric Holdings Co Ltd Method and apparatus for detecting end point in wet anisotropic etching, and method for manufacturing semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602727A (en) * 1983-06-14 1985-01-09 東レ株式会社 Synthetic fiber yarn having pattern and production thereof
JPS602735A (en) * 1983-06-14 1985-01-09 東レ株式会社 Production of spun-like processed yarn
US4839300A (en) * 1985-12-20 1989-06-13 Seiko Instruments & Electronics Ltd. Method of manufacturing semiconductor device having trapezoidal shaped substrate sections
US5358590A (en) * 1992-04-08 1994-10-25 Sony Corporation Method of manufacturing individual element arrays
JP2007142228A (en) * 2005-11-21 2007-06-07 Fuji Electric Holdings Co Ltd Method and apparatus for detecting end point in wet anisotropic etching, and method for manufacturing semiconductor device

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