JPS54101271A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS54101271A
JPS54101271A JP729878A JP729878A JPS54101271A JP S54101271 A JPS54101271 A JP S54101271A JP 729878 A JP729878 A JP 729878A JP 729878 A JP729878 A JP 729878A JP S54101271 A JPS54101271 A JP S54101271A
Authority
JP
Japan
Prior art keywords
film
cutting
semiconductor wafer
coating
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP729878A
Other languages
Japanese (ja)
Inventor
Masashi Yamamoto
Hiroshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP729878A priority Critical patent/JPS54101271A/en
Publication of JPS54101271A publication Critical patent/JPS54101271A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent migration, by coating the silver electrode surface with resin film, in separating semiconductor wafer into a plurality of pellets by cutting. CONSTITUTION:A plurality of diode constructions are constituted on one semiconductor wafer. Next, the film 9 is formed by coating transparent or semi-transparent water-repelling resin on the entire surface of the exposed surface of the electrode 1 and the passivation film 2 so that the electrode surface can not be exposed. Then, deep cutting groove 8 is formed in the semiconductor substrate through the passivation films 2 and 3 and the film 9 with cutting and separation is made.
JP729878A 1978-01-27 1978-01-27 Semiconductor device and its manufacture Pending JPS54101271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP729878A JPS54101271A (en) 1978-01-27 1978-01-27 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP729878A JPS54101271A (en) 1978-01-27 1978-01-27 Semiconductor device and its manufacture

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59104578A Division JPS6016442A (en) 1984-05-25 1984-05-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54101271A true JPS54101271A (en) 1979-08-09

Family

ID=11662109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP729878A Pending JPS54101271A (en) 1978-01-27 1978-01-27 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54101271A (en)

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