JPS5472693A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS5472693A
JPS5472693A JP13966677A JP13966677A JPS5472693A JP S5472693 A JPS5472693 A JP S5472693A JP 13966677 A JP13966677 A JP 13966677A JP 13966677 A JP13966677 A JP 13966677A JP S5472693 A JPS5472693 A JP S5472693A
Authority
JP
Japan
Prior art keywords
oxide film
substrate
unevenness
effect
interferrence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13966677A
Other languages
Japanese (ja)
Inventor
Sadatsugu Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP13966677A priority Critical patent/JPS5472693A/en
Publication of JPS5472693A publication Critical patent/JPS5472693A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PURPOSE: To perform display with the effect interferrence of light by providing unevenness on the substrate surface layer.
CONSTITUTION: The desired pattern is formed by making photo etching for the oxide film of the N type substrate. After forming the oxide film again, the oxide film is etched with NH4F and the desired unevenness is formed on the Si substrate. Next, PN junction is formed with B diffusion, the P type layer is partly etched for the rear side, exposing the N type substrate and forming electrodes. Further, the reflection preventive film such as SiO2 is uniformly formed on the front surface. When the unevenness around 10 μm in pitch and 5 μm in groove width is provided on the display such as graph, sufficiently clear effect of light interferrence can be obtained and the design effect can be increased.
COPYRIGHT: (C)1979,JPO&Japio
JP13966677A 1977-11-21 1977-11-21 Solar cell Pending JPS5472693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13966677A JPS5472693A (en) 1977-11-21 1977-11-21 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13966677A JPS5472693A (en) 1977-11-21 1977-11-21 Solar cell

Publications (1)

Publication Number Publication Date
JPS5472693A true JPS5472693A (en) 1979-06-11

Family

ID=15250581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13966677A Pending JPS5472693A (en) 1977-11-21 1977-11-21 Solar cell

Country Status (1)

Country Link
JP (1) JPS5472693A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6088481A (en) * 1983-10-20 1985-05-18 Kanegafuchi Chem Ind Co Ltd Solar battery
JPS62150689U (en) * 1986-03-18 1987-09-24

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6088481A (en) * 1983-10-20 1985-05-18 Kanegafuchi Chem Ind Co Ltd Solar battery
JPS62150689U (en) * 1986-03-18 1987-09-24

Similar Documents

Publication Publication Date Title
JPS5492175A (en) Manufacture of semiconductor device
JPS5472693A (en) Solar cell
JPS54148484A (en) Manufacture of semiconductor wafer test device
JPS5773984A (en) Manufacture of photodetector
JPS5694674A (en) Thin-film solar cell
JPS52124887A (en) Solar battery
JPS53110379A (en) Optical filter and its manufacture
JPS5421272A (en) Metal photo mask
JPS5456357A (en) Production of semiconductor device
JPS54149593A (en) Solar cell
JPS5372473A (en) Manufacture of mis type semicondctor device
JPS5587430A (en) Forming method of electrode pattern
JPS5478682A (en) Manufactre of semiconductor laser
JPS5481089A (en) Solar battery
JPS57176719A (en) Manufacture of semiconductor device
JPS52117555A (en) Formation of photo mask
JPS54127279A (en) Impurity diffusing method
JPS5538011A (en) Manufacturing of semiconductor light-receiving device
JPS54119883A (en) Manufacture for semiconductor device
JPS54142982A (en) Field effect semiconductor device of junction type and its manufacture
JPS5497390A (en) Manufacture of semiconductor photo detector
JPS54146965A (en) Production of semiconductor device
JPS5511370A (en) Semiconductor laser system
JPS5446468A (en) Manufacture of inverted-trapezoid structure
JPS5582483A (en) Semiconductor laser device and its preparation