JPS54146965A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54146965A
JPS54146965A JP5577178A JP5577178A JPS54146965A JP S54146965 A JPS54146965 A JP S54146965A JP 5577178 A JP5577178 A JP 5577178A JP 5577178 A JP5577178 A JP 5577178A JP S54146965 A JPS54146965 A JP S54146965A
Authority
JP
Japan
Prior art keywords
pattern
convex
film
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5577178A
Other languages
Japanese (ja)
Inventor
Masaru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5577178A priority Critical patent/JPS54146965A/en
Publication of JPS54146965A publication Critical patent/JPS54146965A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To improve an integration density by using the photo mask plate having a pattern, which is protruded with the same thickness as the dimension of difference between a concave and a convex, to perform the light exposure processing when the pattern of a resistor film is formed on the semiconductor substrate having uneven regions.
CONSTITUTION: Base region 2 is formed on Si substrate 1 by diffusion, and SiO2 film 3 and Si3N4 film 4 are laminated and caused to adhere onto all the surface while providing a concave on region 2. Next, negative photo resistor film 5 is applied throughout the surface, and photo mask plate 6 having patterns a, b and c is superposed onto this film 5. At this time, patterns a and c are caused to adhere closely to the convex region of substrate 1, and pattern b is caused to adhere closely to the convex region. Therefore, the thickness of the pattern is set to a=c≪b previously, and further, the thickness of b is made approximately equal to depth t of the convex. The mask plate is constituted in this manner to perform the light exposure processing, so that the incident light can be prevented from entering into the convex, and the substrate is exposed to light as the pattern, and a high-density integration is possible.
COPYRIGHT: (C)1979,JPO&Japio
JP5577178A 1978-05-10 1978-05-10 Production of semiconductor device Pending JPS54146965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5577178A JPS54146965A (en) 1978-05-10 1978-05-10 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5577178A JPS54146965A (en) 1978-05-10 1978-05-10 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54146965A true JPS54146965A (en) 1979-11-16

Family

ID=13008126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5577178A Pending JPS54146965A (en) 1978-05-10 1978-05-10 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54146965A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710250A (en) * 1980-06-23 1982-01-19 Seiko Epson Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710250A (en) * 1980-06-23 1982-01-19 Seiko Epson Corp Semiconductor device

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