JPS55127018A - Impurity diffusion into semiconductor substrate - Google Patents

Impurity diffusion into semiconductor substrate

Info

Publication number
JPS55127018A
JPS55127018A JP3443779A JP3443779A JPS55127018A JP S55127018 A JPS55127018 A JP S55127018A JP 3443779 A JP3443779 A JP 3443779A JP 3443779 A JP3443779 A JP 3443779A JP S55127018 A JPS55127018 A JP S55127018A
Authority
JP
Japan
Prior art keywords
substrate
layer
ion implantation
main surface
impurity diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3443779A
Other languages
Japanese (ja)
Inventor
Yoshikazu Yanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3443779A priority Critical patent/JPS55127018A/en
Publication of JPS55127018A publication Critical patent/JPS55127018A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To perform impurity diffusion without causing difference in level on the surface of a substrate by performing the desired ion implantation after forming a masking layer on the substrate, where no stepped portion will be made on the surface layer of the semiconductor substrate.
CONSTITUTION: In doing ion implantation, a photoresist is coated to the extent of composing a mask on the whole area of the main surface on a Si substrate 7 and a masking layer 8 is formed by partial sensitization and etching. Then the layer 8 is consisted as a mask and ion implantation is made on a regional surface to be done ion implantation 9 which is the exposed area of the substrate 7. After removing the layer 8, a thin oxidized film 10 is formed or attached on the main surface of the substrate 7. The substrate 7 is processed under a high temperature and nonoxidized ambient atmosphere and a region 11 is formed after deeply diffusing and enlarging the ion on the regional surface 9. Finally, the film 10 is removed. In this way, the main surface of the substrate 7 will become thick and degeneration will be avoided. Therefore, difference in level will not be caused on the main surface of the substrate 7 after removing the degenerated layer.
COPYRIGHT: (C)1980,JPO&Japio
JP3443779A 1979-03-26 1979-03-26 Impurity diffusion into semiconductor substrate Pending JPS55127018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3443779A JPS55127018A (en) 1979-03-26 1979-03-26 Impurity diffusion into semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3443779A JPS55127018A (en) 1979-03-26 1979-03-26 Impurity diffusion into semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS55127018A true JPS55127018A (en) 1980-10-01

Family

ID=12414194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3443779A Pending JPS55127018A (en) 1979-03-26 1979-03-26 Impurity diffusion into semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS55127018A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839014A (en) * 1981-09-02 1983-03-07 Nec Corp Manufacture of semiconductor device
JPS58118121A (en) * 1982-01-07 1983-07-14 Seiko Epson Corp Manufacture of semiconductor device
JPS6066814A (en) * 1983-09-16 1985-04-17 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839014A (en) * 1981-09-02 1983-03-07 Nec Corp Manufacture of semiconductor device
JPS58118121A (en) * 1982-01-07 1983-07-14 Seiko Epson Corp Manufacture of semiconductor device
JPS6066814A (en) * 1983-09-16 1985-04-17 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing semiconductor device

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