JPS571270A - Photoelectric conversion element - Google Patents
Photoelectric conversion elementInfo
- Publication number
- JPS571270A JPS571270A JP7388180A JP7388180A JPS571270A JP S571270 A JPS571270 A JP S571270A JP 7388180 A JP7388180 A JP 7388180A JP 7388180 A JP7388180 A JP 7388180A JP S571270 A JPS571270 A JP S571270A
- Authority
- JP
- Japan
- Prior art keywords
- film
- group
- photoelectric conversion
- layered
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 3
- 230000004298 light response Effects 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain the photoelectric conversion element which is characterized by small leakage currents and quick light response, by layering a transparent conducting film, a II-VI group compound film, a VI group element, and a pair of electrodes, on a light transmission substrate. CONSTITUTION:On quartz glass 1, are layered In2O3 2 with a thickness of 100Angstrom - 10mum and CdS3 with a thickness of 1-5mum. Before they are layered, heat treatment is performed in S vapor, and the ratio of Cd and S in the layer 3 is kept in stoichiometric quantity. Then Te4 is evaporated to about 2mum on the film 3. Finally an Au electrode 5 is provided on the film 4. In this constitution, the long device with a large area can be readily obtained. Since the photoelectric conversion layer of VI group film and II-VI group film are provided, the leakage currents are small and the light response speed is quick.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7388180A JPS571270A (en) | 1980-06-02 | 1980-06-02 | Photoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7388180A JPS571270A (en) | 1980-06-02 | 1980-06-02 | Photoelectric conversion element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS571270A true JPS571270A (en) | 1982-01-06 |
Family
ID=13530983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7388180A Pending JPS571270A (en) | 1980-06-02 | 1980-06-02 | Photoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS571270A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60164737A (en) * | 1984-02-06 | 1985-08-27 | Konishiroku Photo Ind Co Ltd | Photosensitive film press-contact member |
| JPH044138A (en) * | 1990-04-21 | 1992-01-08 | Howa Kasei:Kk | Laminated skin material for vacuum molding |
-
1980
- 1980-06-02 JP JP7388180A patent/JPS571270A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60164737A (en) * | 1984-02-06 | 1985-08-27 | Konishiroku Photo Ind Co Ltd | Photosensitive film press-contact member |
| JPH044138A (en) * | 1990-04-21 | 1992-01-08 | Howa Kasei:Kk | Laminated skin material for vacuum molding |
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