JPS5650588A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS5650588A
JPS5650588A JP12760779A JP12760779A JPS5650588A JP S5650588 A JPS5650588 A JP S5650588A JP 12760779 A JP12760779 A JP 12760779A JP 12760779 A JP12760779 A JP 12760779A JP S5650588 A JPS5650588 A JP S5650588A
Authority
JP
Japan
Prior art keywords
electrode
aumg
semiconductor device
compound semiconductor
property
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12760779A
Other languages
Japanese (ja)
Inventor
Tetsuro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12760779A priority Critical patent/JPS5650588A/en
Publication of JPS5650588A publication Critical patent/JPS5650588A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the ohmic property, bonding property and stability of a compound semiconductor device by employing AuMg as an electrode material for a P type GaAs1-xPx crystalline wafer. CONSTITUTION:An electrode 4 is formed with AuMg for a P type GaAs1-xPx (0<=x<=1) crystalline layer 3 used as a wafer for a light emitting diode. The electrode 4 is formed, for example, of AuMg/Au, and thereby reducing the affect of the Mg. Thus, by using Mg without using Be which is of cancerigenic substance, the ohmic property, the bonding property and the stability of the electrode can be improved.
JP12760779A 1979-10-02 1979-10-02 Compound semiconductor device Pending JPS5650588A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12760779A JPS5650588A (en) 1979-10-02 1979-10-02 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12760779A JPS5650588A (en) 1979-10-02 1979-10-02 Compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5650588A true JPS5650588A (en) 1981-05-07

Family

ID=14964266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12760779A Pending JPS5650588A (en) 1979-10-02 1979-10-02 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5650588A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6388323B1 (en) 1994-02-28 2002-05-14 Sumitomo Chemical Co., Ltd. Electrode material and electrode for III-V group compound semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123075A (en) * 1977-04-01 1978-10-27 Nippon Telegr & Teleph Corp <Ntt> Group iii-v compound semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123075A (en) * 1977-04-01 1978-10-27 Nippon Telegr & Teleph Corp <Ntt> Group iii-v compound semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6388323B1 (en) 1994-02-28 2002-05-14 Sumitomo Chemical Co., Ltd. Electrode material and electrode for III-V group compound semiconductor

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