JPS64773A - Photovoltaic element - Google Patents

Photovoltaic element

Info

Publication number
JPS64773A
JPS64773A JP63073894A JP7389488A JPS64773A JP S64773 A JPS64773 A JP S64773A JP 63073894 A JP63073894 A JP 63073894A JP 7389488 A JP7389488 A JP 7389488A JP S64773 A JPS64773 A JP S64773A
Authority
JP
Japan
Prior art keywords
type
thin film
laminated
type layers
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63073894A
Other languages
Japanese (ja)
Other versions
JPH01773A (en
JP2737111B2 (en
Inventor
Katsumi Nakagawa
Isamu Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP63073894A priority Critical patent/JP2737111B2/en
Publication of JPH01773A publication Critical patent/JPH01773A/en
Publication of JPS64773A publication Critical patent/JPS64773A/en
Application granted granted Critical
Publication of JP2737111B2 publication Critical patent/JP2737111B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

PURPOSE:To improve an S/N ratio as an optical sensor, by determining the including amount of hydrogen in a thin film semiconductor layer in the range of a specified atom ratio with respect to a photovoltaic element, which is formed as laminated thin film semiconductors by repeated depositions, and decreasing a dark current. CONSTITUTION:In a PIN type photovoltaic element using silicon thin film semiconductors, the following structures are provided for P-type layers and/or N-type layers: a structure (P-type laminated thin film semiconductor), wherein P-type layers and I-type layers are laminated twice or more so that each layer is thinner than 100Angstrom ; and/or a structure (N-type laminated thin film semiconductor), wherein N-type layers and I-type layers are laminated twice or more so that each layer is thinner than 100Angstrom . The including amount of hydrogen atoms in each film is made to be 1 atom ratio or more and 10 atom ratio or less. On a substrate 1, on which Ag is evaporated, the N-type layers 2 and the I-type layers 3 are laminated three times so that each layer has a thickness of 50Angstrom . Thus an N-type laminated thin film semiconductor is formed. An I-type layer 4 is deposited. Then, the P-type layers 5 and the I-type layers 6 are laminated three times so that each layer has a thickness of 50Angstrom . Thus a P-type laminated thin film semiconductor is formed. Finally, a transparent conductor layer of an ITO thin film and a current collecting electrode are formed.
JP63073894A 1987-03-27 1988-03-28 Photovoltaic element and method for manufacturing the same Expired - Fee Related JP2737111B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63073894A JP2737111B2 (en) 1987-03-27 1988-03-28 Photovoltaic element and method for manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-73626 1987-03-27
JP7362687 1987-03-27
JP63073894A JP2737111B2 (en) 1987-03-27 1988-03-28 Photovoltaic element and method for manufacturing the same

Publications (3)

Publication Number Publication Date
JPH01773A JPH01773A (en) 1989-01-05
JPS64773A true JPS64773A (en) 1989-01-05
JP2737111B2 JP2737111B2 (en) 1998-04-08

Family

ID=26414768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63073894A Expired - Fee Related JP2737111B2 (en) 1987-03-27 1988-03-28 Photovoltaic element and method for manufacturing the same

Country Status (1)

Country Link
JP (1) JP2737111B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130129930A (en) * 2010-10-06 2013-11-29 어플라이드 머티어리얼스, 인코포레이티드 Pecvd oxide-nitride and oxide-silicon stacks for 3d memory application

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202673A (en) * 1983-04-27 1984-11-16 ア−ルシ−エ−　コ−ポレ−ション Superposed photodetector
JPS6233479A (en) * 1985-08-07 1987-02-13 Agency Of Ind Science & Technol Solar cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202673A (en) * 1983-04-27 1984-11-16 ア−ルシ−エ−　コ−ポレ−ション Superposed photodetector
JPS6233479A (en) * 1985-08-07 1987-02-13 Agency Of Ind Science & Technol Solar cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130129930A (en) * 2010-10-06 2013-11-29 어플라이드 머티어리얼스, 인코포레이티드 Pecvd oxide-nitride and oxide-silicon stacks for 3d memory application
JP2013546169A (en) * 2010-10-06 2013-12-26 アプライド マテリアルズ インコーポレイテッド PECVD oxide-nitride stack and oxide-silicon stack for 3D memory application

Also Published As

Publication number Publication date
JP2737111B2 (en) 1998-04-08

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Legal Events

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