JP3398161B2 - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JP3398161B2 JP3398161B2 JP01675992A JP1675992A JP3398161B2 JP 3398161 B2 JP3398161 B2 JP 3398161B2 JP 01675992 A JP01675992 A JP 01675992A JP 1675992 A JP1675992 A JP 1675992A JP 3398161 B2 JP3398161 B2 JP 3398161B2
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- Prior art keywords
- layer
- light
- electrode layer
- photoelectric conversion
- conversion device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、受光素子等の光電変換
装置において、特に静電耐圧を向上させるための遮光構
造を有した光電変換装置に関する。
【０００２】
【従来の技術】従来、ダイオード構造を有する光電変換
装置は、透光性のガラス基板上に透明電極層、半導体
層、裏面電極層、及び樹脂保護層が順次積層された構造
が一般的である。そして、ガラス基板を透過した入射光
により、透明電極層と裏面電極層とで挟まれた半導体層
が発電する。また、この半導体層はある接合容量を有す
るキャパシタとしても作用する。
【０００３】ところで、光電変換装置の出力端子に静電
気が印加された場合に、装置の端子間容量に反比例した
電圧が出力端子にかかるが、光電変換装置が例えばカメ
ラ用フォトダイオードであれば、有効な発電領域が微小
であり、端子間容量が発電領域の面積に比例するような
構成となっているので静電気耐圧が著しく低く、測定工
程や実装工程などにおいて生じた静電気により容易に破
壊されることがあり問題であった。
【０００４】そこで、発電領域となる半導体層の一部を
遮光層で被覆して非受光部を形成し、この非受光部に形
成された接合容量および受光部の接合容量にて端子間容
量を構成して、有効発電領域となる受光部の微小面積に
対して、大きな端子間容量をとることによって静電気耐
圧を向上させる技術が提案されている（実開平1-139459
号公報等参照）。
【０００５】
【従来技術の問題点】しかしながら、光電変換装置が小
型であれば、上述した対策を講じたとしても充分な静電
耐圧が得られないことがあるうえ、電気回路上同一のダ
イオード構造を有する半導体層を遮光層で覆う構成であ
るので、半導体層の光発電部と遮光部との閉回路におい
て、遮光部は光電流に対して順方向となり、この箇所が
光電流のリーク部分となることにより、発電効率が低下
し特性の劣化を招来するという問題があった。
【０００６】
【目的】そこで、本発明は遮光層を有する光電変換装置
において、上記従来の諸問題を解消し、本来の静電気耐
圧を向上させるとともに、特性劣化を招来しない信頼性
の極めて高い光電変換装置を提供することを目的とす
る。
【０００７】
【課題を解決するための手段】上記目的を達成するため
に、本発明の光電変換装置は、入射光が透過する絶縁基
体の主面上に、下面受光側に配設される透明電極層と上
面非受光側に配設される裏面電極層とで挟まれた半導体
層を２つ並設するとともに、前記２つの半導体層におけ
る一方の半導体層の受光側に遮光層を配設し、且つ前記
２つの半導体層を極性が互いに逆のダイオード構造とな
るように接続したことを特徴とする。
【０００８】
【実施例】本発明に係る一実施例について図面に基づき
詳細に説明する。まず、図１に示す光電変換装置Ｓ１
は、例えばカメラ用フォトダイオードであり、外部光Ｌ
が透過する絶縁基体１の主面上に、下面受光側に配設さ
れる透明電極層と上面非受光側に配設される裏面電極層
とで挟まれた半導体層を２つ並設するとともに、これら
２つの半導体層における一方の半導体層の光入射側に遮
光層３を設け、さらに、２つの半導体層は極性が互いに
逆のダイオード構造となるように、半導体層の上下に配
設された電極層が接続されている。すなわち、入射光を
透過させる絶縁基体１の主面上に第１透明電極層２が積
層され、この第１透明電極層２上に所定形状にパターニ
ングされた遮光層３及び第２透明電極層４が積層されて
いる。ここで、第２透明電極層４は第１透明電極層２に
接続されているとともに、遮光層３を第１透明電極層２
で挟むようにして形成されている。また、第２透明電極
層４上には所定形状にパターニングされ２つの並設した
半導体層５ａ，５ｂがそれぞれ積層されている。さら
に、これら半導体層５ａ，５ｂ上に裏面電極層６ａ（＋
側），６ｂ（−側）が積層され、第２透明電極層４には
裏面電極層６ａが接続され、図２に示すように電気回路
上互いに逆方向のダイオード構造を有する半導体層５
ａ，５ｂが並列接続された構成となっており、半導体層
５ａで発生した電力を検出することにより受光量を精確
にセンシングできるようになっている。
【０００９】次に、上記光電変換装置Ｓ１の各層につい
て説明する。絶縁基体１は、厚さ0.4 〜1.1 mm程度の充
分に洗浄した周知のガラス基板などの透光性の絶縁体が
用いられるが、例えばガラス基板がアルカリ金属等の不
純物を多く含んだものでは、積層面側に酸化シリコン等
の絶縁膜を被着させ、絶縁基体１に積層させる層中への
不純物拡散を防止するとよい。
【００１０】第１透明電極層２は、少なくとも後記する
遮光層３や第２透明電極層４との密着性などを向上させ
るために設けたものであって、本実施例では絶縁基体１
を500 ℃程度に加熱し、その上に例えば酸化スズやＩＴ
Ｏ（酸化インジウム・スズ）等を主体とする材質のもの
をＣＶＤ法，スパッタ法，電子ビーム蒸着法，スプレー
法などの周知の成膜方法により厚さ600 〜4500Å程度に
被着している。
【００１１】遮光層３は、例えばアルミニウム，ニッケ
ル，クロム，チタン，金，銀等の単体金属もしくはこれ
らの組合せからなる合金等を真空蒸着法などにより第１
透明電極層２上に少なくとも3000Å以上の厚さに被着し
ており、受光領域の不必要な拡大を防止する。なお、遮
光層３は第１透明電極層２の上に設ける代わりに絶縁基
体１のもう一方の主面側へ設けるようにしてもよく、要
は２つの並設した半導体層において一方の半導体層（半
導体層５ｂ）の受光側を遮光できるようにすればよい。
【００１２】第２透明電極層４は、上記第１透明電極層
２と同様な材質，方法で厚さ数百Å程度に形成される
が、これの材質は遮光層３と半導体層５ａ，５ｂとの両
者に相性のよいもので足り、これら両層との接着強度が
保たれ且つオーミック接触となっていればよく、必ずし
も第１透明電極層２と同一の材質でなくともよい。な
お、この層の膜質を向上させ、かつ半導体層５ａ，５ｂ
の特性を損なわないように、膜質を向上させるフッ素の
ドープ層と半導体層５ａ，５ｂへのフッ素の拡散を防止
する非ドープ層との２層構造を成すように形成してもよ
い。
【００１３】半導体層５ａ，５ｂは、第２透明電極層４
上にｐ−ｉ−ｎの３層構造の水素化アモルファスシリコ
ン（以下、ａ−Ｓｉ：Ｈと略記）で構成されており、こ
れら各層は周知の気相成長法により形成され、例えばプ
ラズマＣＶＤ法により以下のようにして形成される。す
なわち、ｐ層は第２透明電極層４上に被着形成され、ａ
−Ｓｉ：Ｈ形成用ガスであるシラン等に対して不純物ド
ープ用ガスであるジボラン等を所定の比率で混合して厚
さ約200 Å程度に形成する。ｉ層はａ−Ｓｉ：Ｈ形成用
ガスのみにより厚さ約7000Å程度にｐ層上に形成し、さ
らにこの上にｎ層がａ−Ｓｉ：Ｈ形成用ガスに不純物ド
ープ用ガスであるホスフィン等を所定の比率で混合して
厚さ約500 Å程度に形成する。なお、半導体層５ａ，５
ｂはそれぞれアモルファスである必要はなく、またシリ
コンやｐ−ｉ−ｎの３層構造に限定されるものではな
く、要は図２に示すように並設された半導体層５ａと半
導体５ｂとが互いに電気回路上で逆方向のダイオード構
造を有し並列接続されていればよい。
【００１４】裏面電極層６ａ，６ｂはそれぞれ遮光層３
と同様な材質，方法で厚さ約2500Å程度に半導体層５
ａ，５ｂ上に被着形成される。ここで、陽極となる裏面
電極層６ａは第２透明電極層４にも接触している。な
お、これら裏面電極層６ａ，６ｂは遮光層３と必ずしも
同一の材質でなくともよい。また、これら電極層間は半
導体層５ａ，５ｂのｎ層がエッチングされている。
【００１５】このように、上記光電変換装置Ｓ１では遮
光層３を第１透明電極層２と第２透明電極層４とで挟ん
だ構造をとるので、半導体層５内に金属元素が拡散侵入
することにより欠陥凖位が生じて、発電効率を大幅に低
下させ特性劣化を招来するという問題を極力防止するこ
とができ、しかも第１透明電極層２は絶縁基体１と遮光
層３と馴染みがよいので、従来のように遮光層３が絶縁
基体１から剥離することがなく、信頼性の高いものを提
供することができる。
【００１６】次に、上記光電変換装置Ｓ１の静電気耐圧
試験を行った結果について説明する。図３に示すよう
に、光電変換装置Ｓ１とコンデンサとをスイッチＳＷを
介して電圧計Ｖと並列接続し、±300Ｖ，200pFの静電気
を３度印加しても破壊に到ることがなく、特性の劣化も
生じなかった。これは、発電しない半導体層５ｂ側、す
なわち逆方向並列回路側に印加電荷が流れる（順方向バ
イアスとなる）ことで、発電する受光部側の半導体層５
ａに印加される静電荷が減少したためと考えられる。一
方、従来の順方向ダイオードを設けた光電変換装置では
最大の静電気耐圧でも±150Ｖ程度であった。なお、こ
の場合の受光部の面積は本発明および従来のもの共に数
mm2であった。
【００１７】なお、上記光電変換装置Ｓ１をより特性向
上を図るために、第１透明電極層２と遮光層３との間に
光減衰層を設け、この光減衰層として例えばａ−Ｓｉ：
Ｈ層もしくは結晶質のｃ−Ｓｉ層を用いることによっ
て、遮光層３の反射光をこの層により減衰させ、受光面
での外乱光が発生するのを防止し、光電変換装置Ｓ２の
明電流値の線形性を維持させるようにしてもよい。
【００１８】また、上記光減衰層の半導体層を少なくと
も半導体層５ｂより欠陥凖位密度が大きい（例えば2 〜
3 桁程度) 層とすることにより、遮光層３と光減衰層と
のショットキーダイオード構造による光発電を防止し、
光減衰層で発生したキャリアが構造欠陥にトラップさ
せ、これを再結合中心にして消滅させて光電流を抑止
し、いっそう信頼性の高い光電変換装置を提供すること
もできる。ここで、光減衰層の具体例としては、ａ−Ｓ
ｉ：Ｈのハイドープ層、すなわち不純物濃度を1 ラ104 p
pm 程度以上の層とするか、ａ−Ｓｉ層とすることによ
って例えば欠陥凖位密度をａ−Ｓｉ：Ｈより 2〜3 桁程
度大きく(1ラ1014〜1016cm-3)させる。
【００１９】なお、本実施例ではカメラ用フォトダイオ
ードについて示したが、ダイオード構造を有する光電変
換装置であれば適用が可能であり、例えばカラーセンサ
などの各種光センサに適用できる。また、実施例で示し
た半導体層は一例にすぎず周知のダイオード構造を採用
することができる。
【００２０】
【発明の効果】以上説明したように、本発明の光電変換
装置によれば、入射光が透過する絶縁基体の主面上に、
下面受光側に配設される透明電極層と上面非受光側に配
設される裏面電極層とで挟まれた半導体層を２つ並設す
るとともに、これら２つの半導体層における一方の半導
体層の受光側に遮光層を配設し、且つ２つの半導体層を
極性が互いに逆のダイオード構造となるように接続した
ので、光電変換装置が小型であっても印加電荷を逃すこ
とができ、静電気耐圧を充分に向上させることができ、
さらに遮光層の剥離が生じにくい構成とすることができ
る。これにより、発電効率を低下させず特性劣化を招来
しない信頼性の極めて高い光電変換装置を提供すること
ができる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion device such as a light receiving element, and more particularly to a photoelectric conversion device having a light shielding structure for improving electrostatic withstand voltage. 2. Description of the Related Art Conventionally, a photoelectric conversion device having a diode structure generally has a structure in which a transparent electrode layer, a semiconductor layer, a back electrode layer, and a resin protective layer are sequentially laminated on a translucent glass substrate. It is a target. Then, the semiconductor layer sandwiched between the transparent electrode layer and the back electrode layer generates electric power by the incident light transmitted through the glass substrate. This semiconductor layer also functions as a capacitor having a certain junction capacitance. When static electricity is applied to the output terminal of the photoelectric conversion device, a voltage inversely proportional to the capacitance between the terminals of the device is applied to the output terminal. However, if the photoelectric conversion device is, for example, a photodiode for a camera, it is effective. The power generation area is very small, and the capacitance between terminals is proportional to the area of the power generation area, so the electrostatic withstand voltage is extremely low, and it is easily destroyed by static electricity generated in the measurement process, mounting process, etc. There was a problem. Therefore, a non-light-receiving portion is formed by covering a part of the semiconductor layer serving as a power generation region with a light-shielding layer. A technology has been proposed to improve the electrostatic withstand voltage by forming a large inter-terminal capacitance with respect to a small area of the light receiving section which is an effective power generation area (Japanese Utility Model Application Laid-Open No. 1-139459).
Reference). [0005] However, if the photoelectric conversion device is small, sufficient electrostatic breakdown voltage may not be obtained even if the above measures are taken, and the same diode structure in the electric circuit may be obtained. In the closed circuit between the photovoltaic unit and the light-shielding unit of the semiconductor layer, the light-shielding unit is in the forward direction with respect to the photocurrent, and this portion is a part where the photocurrent leaks. As a result, there is a problem that the power generation efficiency is reduced and characteristics are deteriorated. Accordingly, the present invention is directed to a photoelectric conversion device having a light-shielding layer, which solves the above-mentioned conventional problems, improves the original electrostatic withstand voltage, and has extremely high reliability without causing deterioration in characteristics. It is intended to provide a device. In order to achieve the above object, a photoelectric conversion device according to the present invention is provided on a main surface of an insulating substrate through which incident light is transmitted, the transparent device being provided on a lower surface light receiving side. Two semiconductor layers sandwiched between an electrode layer and a back electrode layer disposed on the upper non-light receiving side are arranged in parallel, and a light shielding layer is disposed on the light receiving side of one of the two semiconductor layers. And the two semiconductor layers are connected so as to form a diode structure having polarities opposite to each other. An embodiment according to the present invention will be described in detail with reference to the drawings. First, the photoelectric conversion device S1 shown in FIG.
Is, for example, a photodiode for a camera, and external light L
Two semiconductor layers sandwiched between a transparent electrode layer disposed on the lower light-receiving side and a back electrode layer disposed on the upper non-light-receiving side are provided on the main surface of the insulating base 1 through which light passes. A light-shielding layer 3 is provided on the light incident side of one of the two semiconductor layers, and the two semiconductor layers are disposed above and below the semiconductor layers so as to have diode structures having polarities opposite to each other. The electrode layers are connected. That is, a first transparent electrode layer 2 is laminated on a main surface of an insulating substrate 1 that transmits incident light, and a light-shielding layer 3 and a second transparent electrode layer 4 patterned in a predetermined shape on the first transparent electrode layer 2. Are laminated. Here, the second transparent electrode layer 4 is connected to the first transparent electrode layer 2 and the light shielding layer 3 is connected to the first transparent electrode layer 2.
It is formed so as to be sandwiched between. On the second transparent electrode layer 4, two semiconductor layers 5a and 5b which are patterned in a predetermined shape and are arranged side by side are respectively laminated. Further, the back electrode layer 6a (+
2), 6b (-side) are laminated, the back surface electrode layer 6a is connected to the second transparent electrode layer 4, and the semiconductor layer 5 having a diode structure in the opposite direction on the electric circuit as shown in FIG.
a and 5b are connected in parallel, and the amount of received light can be accurately sensed by detecting the power generated in the semiconductor layer 5a. Next, each layer of the photoelectric conversion device S1 will be described. As the insulating substrate 1, a light-transmitting insulator such as a well-cleaned well-known glass substrate having a thickness of about 0.4 to 1.1 mm is used. For example, if the glass substrate contains many impurities such as alkali metals, It is preferable that an insulating film such as silicon oxide be deposited on the stacking surface side to prevent impurity diffusion into the layer to be stacked on the insulating base 1. The first transparent electrode layer 2 is provided to improve at least the adhesion to the light-shielding layer 3 and the second transparent electrode layer 4 described later.
Is heated to about 500 ° C, and then, for example, tin oxide or IT
A material mainly composed of O (indium tin oxide) or the like is applied to a thickness of about 600 to 4500 ° by a known film forming method such as a CVD method, a sputtering method, an electron beam evaporation method, and a spray method. The light-shielding layer 3 is made of, for example, a single metal such as aluminum, nickel, chromium, titanium, gold, and silver, or an alloy of a combination thereof by a vacuum deposition method or the like.
It is applied to the transparent electrode layer 2 so as to have a thickness of at least 3000 mm, thereby preventing unnecessary enlargement of the light receiving area. The light-shielding layer 3 may be provided on the other main surface side of the insulating base 1 instead of being provided on the first transparent electrode layer 2. In other words, one of the two side-by-side semiconductor layers The light receiving side of (semiconductor layer 5b) may be shielded from light. The second transparent electrode layer 4 is formed in the same material and method as the first transparent electrode layer 2 to have a thickness of about several hundreds of mm, and is made of a light shielding layer 3 and semiconductor layers 5a and 5b. It is only necessary that the material is compatible with both of them, and it is sufficient that the adhesive strength with both of these layers is maintained and an ohmic contact is made, and the material is not necessarily the same as that of the first transparent electrode layer 2. Note that the film quality of this layer is improved and the semiconductor layers 5a, 5b
May be formed so as to form a two-layer structure of a fluorine-doped layer for improving the film quality and an undoped layer for preventing diffusion of fluorine into the semiconductor layers 5a and 5b. The semiconductor layers 5a and 5b are formed on the second transparent electrode layer 4
The upper layer is made of hydrogenated amorphous silicon (hereinafter abbreviated as a-Si: H) having a three-layer structure of pin, and these layers are formed by a well-known vapor phase growth method, for example, a plasma CVD method. Is formed as follows. That is, the p layer is formed on the second transparent electrode layer 4,
-Si: An impurity doping gas such as diborane or the like is mixed at a predetermined ratio with silane or the like forming gas to form a film having a thickness of about 200 mm. The i-layer is formed on the p-layer to a thickness of about 7,000 ° using only a-Si: H forming gas, and an n-layer is further formed on the a-Si: H forming gas by phosphine or the like which is an impurity doping gas. Are mixed at a predetermined ratio to form a thickness of about 500 mm. The semiconductor layers 5a, 5
b does not need to be amorphous, and is not limited to the three-layer structure of silicon or pin. In short, the semiconductor layers 5a and 5b arranged side by side as shown in FIG. It suffices if they have opposite diode structures on the electric circuit and are connected in parallel. The back electrode layers 6a and 6b are respectively
The semiconductor layer 5 is formed to a thickness of about 2500 mm using the same material and method as described above.
a, 5b. Here, the back electrode layer 6 a serving as an anode is also in contact with the second transparent electrode layer 4. The back electrode layers 6a and 6b are not necessarily made of the same material as the light shielding layer 3. The n layers of the semiconductor layers 5a and 5b are etched between these electrode layers. As described above, the photoelectric conversion device S1 has a structure in which the light shielding layer 3 is sandwiched between the first transparent electrode layer 2 and the second transparent electrode layer 4, so that the metal element diffuses into the semiconductor layer 5. As a result, it is possible to prevent a problem that a defect level is generated, which greatly reduces power generation efficiency and causes characteristic deterioration, and that the first transparent electrode layer 2 is well compatible with the insulating substrate 1 and the light shielding layer 3. Therefore, unlike the conventional case, the light-shielding layer 3 does not peel off from the insulating base 1 and a highly reliable one can be provided. Next, the result of conducting an electrostatic withstand voltage test of the photoelectric conversion device S1 will be described. As shown in FIG. 3, a photoelectric conversion device S1 and a capacitor are connected in parallel with a voltmeter V via a switch SW, and even if static electricity of ± 300 V, 200 pF is applied three times, no destruction occurs, and the characteristics are not increased. No deterioration occurred. This is because the applied charge flows to the semiconductor layer 5b that does not generate power, that is, the reverse parallel circuit side (becomes a forward bias), so that the semiconductor layer 5 on the light receiving unit side that generates power
It is considered that the electrostatic charge applied to a decreased. On the other hand, in a conventional photoelectric conversion device provided with a forward diode, the maximum electrostatic withstand voltage is about ± 150 V. In this case, the area of the light receiving section is several in both the present invention and the conventional one.
It was mm 2. In order to further improve the characteristics of the photoelectric conversion device S1, a light-attenuating layer is provided between the first transparent electrode layer 2 and the light-shielding layer 3, and the light-attenuating layer may be, for example, a-Si:
By using the H layer or the crystalline c-Si layer, the reflected light of the light-shielding layer 3 is attenuated by this layer to prevent the generation of disturbance light on the light receiving surface, and the light current value of the photoelectric conversion device S2 is reduced. May be maintained. The semiconductor layer of the light attenuating layer has a defect level density higher than that of at least the semiconductor layer 5b (for example, 2 to 5).
(Approximately three digits) to prevent photovoltaic power generation due to the Schottky diode structure between the light shielding layer 3 and the light attenuation layer.
Carriers generated in the light attenuating layer are trapped by structural defects, and are eliminated by using the defects as centers of recombination to suppress a photocurrent, so that a more reliable photoelectric conversion device can be provided. Here, as a specific example of the light attenuation layer, aS
i: H-doped layer, that is, the impurity concentration is 1 p 104 p
For example, the defect level density is increased by about 2 to 3 orders of magnitude (1 × 10 14 to 10 16 cm −3 ) than that of a-Si: H by forming a layer of about pm or more or an a-Si layer. In this embodiment, a photodiode for a camera has been described. However, the present invention can be applied to any photoelectric conversion device having a diode structure, and can be applied to various optical sensors such as a color sensor. Further, the semiconductor layers shown in the embodiments are merely examples, and a well-known diode structure can be adopted. As described above, according to the photoelectric conversion device of the present invention, the main surface of the insulating substrate through which the incident light is transmitted,
Two semiconductor layers sandwiched between a transparent electrode layer disposed on the lower light receiving side and a back electrode layer disposed on the upper non-light receiving side are arranged side by side, and one of the two semiconductor layers is formed of one of the semiconductor layers. Since a light-blocking layer is provided on the light-receiving side and the two semiconductor layers are connected so as to form a diode structure having polarities opposite to each other, the applied charge can be released even if the photoelectric conversion device is small, and the electrostatic breakdown voltage can be reduced. Can be sufficiently improved,
Further, a structure in which peeling of the light-shielding layer hardly occurs can be achieved. This makes it possible to provide a highly reliable photoelectric conversion device that does not reduce power generation efficiency or cause deterioration in characteristics.
【図面の簡単な説明】
【図１】本発明に係る一実施例の光電変換装置の要部断
面図である。
【図２】半導体層の等価回路を示す図である。
【図３】静電気耐圧試験の電気回路を示す図である。
【符号の説明】
１：絶縁基体
２：第１透明電極層
３：遮光層
４：第２透明電極層
５ａ，５ｂ：半導体層
６ａ，６ｂ：裏面電極層
Ｓ１：光電変換装置BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view of a main part of a photoelectric conversion device according to one embodiment of the present invention. FIG. 2 is a diagram showing an equivalent circuit of a semiconductor layer. FIG. 3 is a diagram showing an electric circuit of an electrostatic withstand voltage test. DESCRIPTION OF SYMBOLS 1: Insulating base 2: First transparent electrode layer 3: Light shielding layer 4: Second transparent electrode layers 5a, 5b: Semiconductor layers 6a, 6b: Back electrode layer S1: Photoelectric conversion device
Claims (1)
下面受光側に配設される透明電極層と上面非受光側に配
設される裏面電極層とで挟まれた半導体層を２つ並設す
るとともに、前記２つの半導体層における一方の半導体
層の受光側に遮光層を配設し、且つ前記２つの半導体層
を極性が互いに逆のダイオード構造となるように接続し
たことを特徴とする光電変換装置。(57) [Claim 1] On the main surface of an insulating base through which incident light passes,
Two semiconductor layers sandwiched between a transparent electrode layer disposed on the lower light receiving side and a back electrode layer disposed on the upper non-light receiving side are arranged in parallel, and one of the two semiconductor layers is formed of one of the semiconductor layers. A photoelectric conversion device, wherein a light-shielding layer is provided on a light-receiving side, and the two semiconductor layers are connected to form a diode structure having polarities opposite to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01675992A JP3398161B2 (en) | 1992-01-31 | 1992-01-31 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01675992A JP3398161B2 (en) | 1992-01-31 | 1992-01-31 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05218486A JPH05218486A (en) | 1993-08-27 |
| JP3398161B2 true JP3398161B2 (en) | 2003-04-21 |
Family
ID=11925165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01675992A Expired - Fee Related JP3398161B2 (en) | 1992-01-31 | 1992-01-31 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3398161B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7492028B2 (en) | 2005-02-18 | 2009-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method of the same, and a semiconductor device |
| JP4532418B2 (en) * | 2005-02-18 | 2010-08-25 | 株式会社半導体エネルギー研究所 | Optical sensor and manufacturing method thereof |
-
1992
- 1992-01-31 JP JP01675992A patent/JP3398161B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05218486A (en) | 1993-08-27 |
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