JPH02148773A - Optical sensor - Google Patents
Optical sensorInfo
- Publication number
- JPH02148773A JPH02148773A JP63301873A JP30187388A JPH02148773A JP H02148773 A JPH02148773 A JP H02148773A JP 63301873 A JP63301873 A JP 63301873A JP 30187388 A JP30187388 A JP 30187388A JP H02148773 A JPH02148773 A JP H02148773A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- amorphous silicon
- silicon semiconductor
- optical sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000002844 melting Methods 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 abstract description 2
- 238000000059 patterning Methods 0.000 abstract description 2
- 239000002674 ointment Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 78
- 239000010408 film Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業の利用分野〕
本発明は非晶質半導体層を有する光センサーに関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photosensor having an amorphous semiconductor layer.
現在、光センサーには、フォトダイオード型、プレーナ
ー型、抱き合わせ型など幅広く用いられている。Currently, a wide variety of optical sensors are used, including photodiode types, planar types, and tied types.
フォトダイオード型光センサーは、第４図に示すように
光入射される側より、透明基板４１、透明導電膜４２、
Ｐ−Ｉ−Ｎ接合した非晶質シリコン半導体層４３及び金
属電極４４が順次積層されている。As shown in FIG. 4, the photodiode type optical sensor includes, from the side where light is incident, a transparent substrate 41, a transparent conductive film 42,
A P-I-N bonded amorphous silicon semiconductor layer 43 and a metal electrode 44 are sequentially laminated.
透明基板４１はガラス等であり、透明導電膜４２は、酸
化錫、酸化インジウム、酸化インジウム錫等の金属酸化
物の薄膜によって形成される。The transparent substrate 41 is made of glass or the like, and the transparent conductive film 42 is formed of a thin film of a metal oxide such as tin oxide, indium oxide, or indium tin oxide.
Ｐ−１−Ｎ接合した非晶質シリコン半導体層４３は、少
なくとも透明導電膜４２の出力を導出するための一方の
端子４５形成部分を残して形成される。具体的には、非
晶質シリコン半導体層４３は、透明導電膜４２上に所定
形状のマスクを装着してシラン、ジシランなどのシリコ
ン化合物ガスをグロー放電で分解するプラズマＣＶＤ法
や光ＣＶＤ法等で被着したり、または、非晶質シリコン
半導体層４３を形成した後に酸・アルカリなどのエツチ
ング液で所定形状に成膜されていた。The P-1-N junction amorphous silicon semiconductor layer 43 is formed leaving at least a portion where one terminal 45 for outputting the output of the transparent conductive film 42 is formed. Specifically, the amorphous silicon semiconductor layer 43 is formed using a plasma CVD method, a photo CVD method, etc. in which a mask of a predetermined shape is attached on the transparent conductive film 42 and a silicon compound gas such as silane or disilane is decomposed by glow discharge. Alternatively, after forming the amorphous silicon semiconductor layer 43, a film is formed into a predetermined shape using an etching solution such as acid or alkali.
金属電極４４は、ニッケル、アルミニウム、チタン、ク
ロム等の金属を抵抗加熱法等によって被着形成される。The metal electrode 44 is formed by depositing metal such as nickel, aluminum, titanium, chromium, etc. by a resistance heating method or the like.
尚、この金属電極４４と同時に透明導電膜４２上に出力
端子４５を形成する。Incidentally, an output terminal 45 is formed on the transparent conductive film 42 at the same time as this metal electrode 44.
このように構成された光センサーは、基板側からの光入
射により、非晶質シリコン半導体層４３の１層に光が到
達すると、１層でキャリアが発生し、非晶質シリコン半
導体層４３の光導電率が変化したり、金属電極４４と出
力端子４５との間に光起電力が発生し、これらの変化を
外部回路で検出していた。In the optical sensor configured in this way, when light reaches one layer of the amorphous silicon semiconductor layer 43 due to light incidence from the substrate side, carriers are generated in the first layer and the amorphous silicon semiconductor layer 43 is heated. The photoconductivity changes and photoelectromotive force is generated between the metal electrode 44 and the output terminal 45, and these changes are detected by an external circuit.
しかしながら、上述の光センサーにおいて、非晶質シリ
コン半導体層４３と基板４１間から出力を得る場合、非
晶質シリコン半導体層４３を所定形状にパターンニング
しなくてはならず、非晶質シリコン半導体層４３の成膜
前にマスク処理又は成膜後にエツチング処理など大気中
での作業が必要となり、非晶質シリコン半導体層４３と
透明導電膜４２又は金属電極４４との間に、酸化膜が形
成されていまい、特性の低下が発生してしまう。However, in the above optical sensor, when obtaining an output from between the amorphous silicon semiconductor layer 43 and the substrate 41, the amorphous silicon semiconductor layer 43 must be patterned into a predetermined shape, and the amorphous silicon semiconductor layer 43 must be patterned into a predetermined shape. Operations in the atmosphere such as mask processing or etching processing after film formation are required before forming the layer 43, and an oxide film is formed between the amorphous silicon semiconductor layer 43 and the transparent conductive film 42 or the metal electrode 44. Otherwise, the characteristics will deteriorate.
本発明は上述の問題点に鑑みて案出されたものであり、
非晶質シリコン半導体層のパターンニングを不要にし、
簡単な構造で安定した出力が得られる光センサーを提供
することにある。The present invention has been devised in view of the above-mentioned problems,
Eliminates the need for patterning the amorphous silicon semiconductor layer,
The object of the present invention is to provide a light sensor that has a simple structure and can provide stable output.
〔目的を達成するための具体的な手段〕本発明が上述の
目的を達成するために行う具体的な手段は、非晶質シリ
コン半導体層上に２つの金属電極を形成した光センサー
において、前記−方の金属電極には、非晶質シリコン半
導体層に拡散し得る低融点拡散金属を含んでいる光セン
サーを提供する。[Specific Means for Achieving the Object] A specific means for achieving the above-mentioned object of the present invention is a photo sensor in which two metal electrodes are formed on an amorphous silicon semiconductor layer. The - metal electrode provides an optical sensor containing a low melting point diffusing metal that can diffuse into the amorphous silicon semiconductor layer.
以下、本発明の光センサーを図面に基づいて詳細に説明
する。Hereinafter, the optical sensor of the present invention will be explained in detail based on the drawings.
第１図は本発明に係る光センサーの構造を示す断面構造
図である。FIG. 1 is a cross-sectional structural diagram showing the structure of an optical sensor according to the present invention.
光センサーは、透明導電膜２を被着した透明基板１上に
、第１の導電型、第２の導電型、第３の導電型を接合し
た、即ちＰ−Ｉ−Ｎ接合した非晶シリコン質半導体Ｎ３
及び金属電極４ａ、４ｂを順次積層して構成されている
。The optical sensor is made of amorphous silicon in which a first conductivity type, a second conductivity type, and a third conductivity type are bonded on a transparent substrate 1 on which a transparent conductive film 2 is adhered, that is, P-I-N bonded. quality semiconductor N3
and metal electrodes 4a and 4b are sequentially laminated.
透明基板１はガラス、透光性セラミックなどから成り、
該透明基板ｌの一主面の全面には透明導電膜２が被着さ
れている。The transparent substrate 1 is made of glass, translucent ceramic, etc.
A transparent conductive film 2 is deposited on the entire main surface of the transparent substrate l.
透明導電膜２は酸化錫、酸化インジウム、酸化インジウ
ム錫などの金属酸化物膜で形成される。The transparent conductive film 2 is formed of a metal oxide film such as tin oxide, indium oxide, and indium tin oxide.
非晶質シリコン半導体層３は、透明導電膜２の全面に形
成される。非晶質シリコン半導体層３は、第１の導電型
、第２の導電型、第３の導電型を接合、即ちＰ−Ｉ−Ｎ
接合が形成されている。具体的には、非晶質シリコン半
導体層３はシラン、ジシランなどのシリコン化合物ガス
をグロー放電で分解するプラズマＣＶＤ法や光ＣＶＤ法
等で被着され。そして、Ｐ層はシランガスにジボランな
どのＰ型ドーピングガスを混入した反応ガスで形成され
〜ＮＦｊはシランガスにフォスフインなどのＮ型ドーピ
ングガスを混入した反応ガスで形成される。Amorphous silicon semiconductor layer 3 is formed on the entire surface of transparent conductive film 2 . The amorphous silicon semiconductor layer 3 connects the first conductivity type, the second conductivity type, and the third conductivity type, that is, P-I-N.
A junction is formed. Specifically, the amorphous silicon semiconductor layer 3 is deposited by a plasma CVD method, a photo CVD method, or the like in which a silicon compound gas such as silane or disilane is decomposed by glow discharge. The P layer is formed using a reactive gas containing silane gas mixed with a P-type doping gas such as diborane, and the NFj layer is formed using a reactive gas containing silane gas mixed with an N-type doping gas such as phosphine.
金属電極４ａは、非晶質シリコン半導体層３上の所定位
置に形成され、非晶質シリコン半導体層３で発生するキ
ャリアを収集すると同時に外部に導出するための一方の
端子と成るものである。具体的には金属電極４ａは、ニ
ッケル、アルミニウム、チタン、クロム等の金属を抵抗
加熱法等によって被着形成される。即ち、この工程まで
一連の薄膜手法によって形成されるために、非晶質シリ
コン半導体層３と透明導電膜２及び金属電極４ａとの界
面が良好な状態が達成される。さらに、金属電極４ａは
所定形状にエツチング処理され、透明導電膜２、Ｐ−Ｉ
−Ｎ接合した非晶質シリコン半導体層３及び金属電極４
ａが積層したダイオードが形成される。このとき、金属
電極４ａ以外の非晶質シリコン半導体層３の一部が除去
されてもよい。The metal electrode 4a is formed at a predetermined position on the amorphous silicon semiconductor layer 3, and serves as one terminal for collecting carriers generated in the amorphous silicon semiconductor layer 3 and at the same time guiding them to the outside. Specifically, the metal electrode 4a is formed by depositing metal such as nickel, aluminum, titanium, chromium, etc. by a resistance heating method or the like. That is, since this step is formed by a series of thin film techniques, a good interface between the amorphous silicon semiconductor layer 3, the transparent conductive film 2, and the metal electrode 4a is achieved. Further, the metal electrode 4a is etched into a predetermined shape, and the transparent conductive film 2, P-I
-N-junctioned amorphous silicon semiconductor layer 3 and metal electrode 4
A diode is formed in which a is laminated. At this time, part of the amorphous silicon semiconductor layer 3 other than the metal electrode 4a may be removed.
さらに、金属電極４ａ以外の非晶質シリコン半導体層３
上には、非晶質シリコン半導体層３に拡散し得る低融点
拡散金属を含んでいる金属電極４ｂが形成される。Furthermore, the amorphous silicon semiconductor layer 3 other than the metal electrode 4a
A metal electrode 4b containing a low melting point diffusion metal that can diffuse into the amorphous silicon semiconductor layer 3 is formed thereon.
金属電極４ｂは、非晶質シリコン半導体層３に拡散し得
る低融点金属により、金属電極４ｂを形成した下部にあ
る非晶質シリコン半導体層３を良電導体５化して、透明
導電膜２と良好なオーミックコンタクトを達成し、他方
の出力端子と成るものである。具体的には、金属電極４
ｂはフェール樹脂、アクリル樹脂、エポキシ樹脂などの
ベース樹脂に銅、銀などの金属粉末及びＩｎＸＢ１など
の低融点金属拡散金属を含んだ導電性ペーストをスクリ
ーン印刷法によって塗布、乾燥（１５０〜２５０℃）、
硬化して形成される。ベース樹脂材は、通常、非晶質シ
リコン半導体層３を形成する際の基板温度である２５０
℃程度以下の低温で硬化させるためのものであり、乾燥
、硬化においては、非晶質シリコン半導体層３及び金属
電極４ａに悪影響を及ぼすことが一切ない。The metal electrode 4b is formed by converting the amorphous silicon semiconductor layer 3 under the metal electrode 4b into a good conductor 5 using a low melting point metal that can diffuse into the amorphous silicon semiconductor layer 3, and forming the transparent conductive film 2. It achieves good ohmic contact and serves as the other output terminal. Specifically, the metal electrode 4
In b, a conductive paste containing metal powder such as copper and silver and a low melting point metal diffusion metal such as InXB1 is applied to a base resin such as Fehr resin, acrylic resin, or epoxy resin by a screen printing method and dried (150 to 250°C). ),
Formed by hardening. The base resin material is normally heated to 250°C, which is the substrate temperature when forming the amorphous silicon semiconductor layer 3.
It is for curing at a low temperature of about 0.degree.
以上のように、光センサーは、非晶質シリコン半導体層
３の特性を低下させることがなく、非晶質シリコン半導
体層３の裏面側に出力端子（金属電極４ａ、４ｂ）が集
中し、簡単な構造で例えば金属電極４ａ、４ｂの材料に
半田接合が可能なＮｉやＣｕなどを使用すれば、光セン
サーのチップ部品が達成される。As described above, the optical sensor does not deteriorate the characteristics of the amorphous silicon semiconductor layer 3, the output terminals (metal electrodes 4a, 4b) are concentrated on the back side of the amorphous silicon semiconductor layer 3, and it is easy to use. If, for example, the material of the metal electrodes 4a, 4b is made of Ni, Cu, or the like, which can be soldered, a chip component of an optical sensor can be achieved.
第２図は、第１図に示した光センサーの透明導電膜２を
排除した構造である。即ち非晶質シリコン半導体層２３
が直接基板２１上に形成できるために、温度制御などの
成膜条件が緩和され、非晶質シリコン半導体層２３の特
性が向上される光センサーである。FIG. 2 shows a structure in which the transparent conductive film 2 of the optical sensor shown in FIG. 1 is removed. That is, the amorphous silicon semiconductor layer 23
Since the amorphous silicon semiconductor layer 23 can be formed directly on the substrate 21, film formation conditions such as temperature control are relaxed, and the characteristics of the amorphous silicon semiconductor layer 23 are improved.
本実施例では、Ｐ−Ｉ−Ｎ接合した非晶質シリコン半導
体層２３の基板に接触する層、即ちＰ層またはＮ層が第
１図に示した透明導電膜を兼ねるために低抵抗化されて
いる。即ち、非晶質シリコン半導体層２３の一部が微結
晶化されている。微結晶状態は、粒径５０〜２００人の
結晶が単独又は非晶質シリコン層内に混在している状態
である。In this embodiment, the layer in contact with the substrate of the P-I-N bonded amorphous silicon semiconductor layer 23, that is, the P layer or the N layer, has a low resistance because it also serves as the transparent conductive film shown in FIG. ing. That is, a portion of the amorphous silicon semiconductor layer 23 is microcrystalized. The microcrystalline state is a state in which crystals with grain sizes of 50 to 200 are present singly or mixed in an amorphous silicon layer.
本実施例の光センサーは、基板２１上に微結晶層、図で
は２層２３ｐ及びＩ−Ｎ接合した非晶質シリコン半導体
層２３が形成され、さらに非晶質シリコン半導体層２３
上に金属電極４ａ、４ｂが形成されている。In the optical sensor of this embodiment, a microcrystalline layer, in the figure, a two-layer 23p and an I-N junction amorphous silicon semiconductor layer 23 are formed on a substrate 21, and an amorphous silicon semiconductor layer 23 is further formed.
Metal electrodes 4a and 4b are formed thereon.
微結晶化の２層２３ｐは上述した成膜方法において成膜
基板温度を４００℃以上の高温にすることで達成される
。または通常よりもＲＦ電力をあげ（（Ｌ ５〜１．
０Ｗ／ｃｍす、シラン／水素の比を大きくシ（ｔｒｚ希
釈 ０．１〜０．５％５ｉＨ４）、成膜したＰ層を４０
０℃、１時間のアニール処理することで達成される。何
れの方法においても、基板に透明導電膜が無いために容
易に高温に晒すことができるのである。このように形成
された２層２３ｐは、導電率１０′〜１０２（Ω・０ｍ
２）−１が得られ、短絡電流Ｉ Ｘｌ０−’Ａの場合で
あっても支障なく動作する。The microcrystalline two-layer 23p is achieved by raising the temperature of the film-forming substrate to a high temperature of 400° C. or higher in the film-forming method described above. Or increase the RF power more than usual ((L 5-1.
0W/cm, the silane/hydrogen ratio was increased (trz dilution 0.1-0.5%5iH4), and the formed P layer was
This is achieved by annealing at 0°C for 1 hour. In either method, since the substrate does not have a transparent conductive film, it can be easily exposed to high temperatures. The two layers 23p formed in this way have a conductivity of 10' to 102 (Ω・0m
2)-1 is obtained, and the circuit operates without problems even when the short-circuit current is IXl0-'A.
第３図は、この微結晶層の２層２３ｐを含む非晶質シリ
コン半導体層２３を有する光センサーの分光感度を測定
した特性図である。FIG. 3 is a characteristic diagram obtained by measuring the spectral sensitivity of an optical sensor having an amorphous silicon semiconductor layer 23 including two layers 23p of microcrystalline layers.
非晶質シリコン半導体層２３の膜厚は、微結晶層の２層
２３ｐを１０００人〜４０００人を変化させ、１層を６
０００人、Ｎ層を５００人とした。The thickness of the amorphous silicon semiconductor layer 23 is determined by changing the thickness of the two microcrystalline layers 23p from 1000 to 4000, and changing the thickness of the first layer 23p from 1000 to 4000.
000 people, and 500 people for the N class.
金属電極４ａにＮｉを使用し、金属電極４ｂには、フェ
ノール樹脂にＣｕ粉末７５−ｔχ、Ｂｉ粉末５−Ｌχ添
加した導電性ペーストを２５０℃、１５分間硬化して作
成した。Ni was used for the metal electrode 4a, and the metal electrode 4b was prepared by curing a conductive paste in which 75-tχ of Cu powder and 5-Lχ of Bi powder were added to a phenol resin at 250°C for 15 minutes.
特性図から明らかなように、微結晶層の２層２３ｐを形
成することにより、約４５Ｏｎ＋ｎの波長はカットされ
、工業的測定装置等に利用される赤色光の波長（約６６
０ｎｍ）の測定におけるノイズが減少できる。線Ａは、
微結晶層の２層２３ｐの厚みが１０００人の、線Ｂは、
微結晶層の２層２３ｐの厚みが２０００人の、線Ｃは、
微結晶層の２層２３ｐの厚みが４０００人の分光感度を
夫々示した。なお、２層２３ｐの厚みが１０００人の光
センサーでは、０．０４μＡ／ｎｍ２の明電流、２ Ｘ
１０ ’−” Ａ／ｖｗ” （出力４子間ニＩ Ｖ
（Ｄバイアス電圧を印加した状態）の暗電流が得られ、
光センサーとして極めて利用価値の高いものが得られた
。As is clear from the characteristic diagram, by forming the two layers 23p of microcrystalline layers, the wavelength of approximately 45On+n is cut, and the wavelength of red light (approximately 66
0 nm) noise in measurements can be reduced. Line A is
Line B, where the thickness of the two microcrystalline layers 23p is 1000 people, is
Line C, where the thickness of the two microcrystalline layers 23p is 2000 people, is
The thickness of the two microcrystalline layers 23p each showed a spectral sensitivity of 4000. In addition, in an optical sensor with a thickness of 2 layers 23p of 1000 people, a bright current of 0.04 μA/nm2, 2
10'-”A/vw” (between 4 outputs
(with D bias voltage applied) dark current is obtained,
An extremely useful optical sensor was obtained.
なお、上述の微結晶の非晶質シリコン半導体層の２層２
３ｐ上に形成される１層を高温で成膜してアニール工程
と兼ねさせてもよい。このように、高温（４００℃以上
）で１層を成膜すると、光照射で発生する光劣化による
初期特性の低下を大幅に改善でき、−層長波長側の感度
向上した光センサーが達成できる。Note that the two layers 2 of the above-mentioned microcrystalline amorphous silicon semiconductor layer
One layer formed on 3p may be formed at a high temperature to also serve as an annealing process. In this way, by forming a single layer at high temperatures (400°C or higher), it is possible to significantly improve the deterioration of initial characteristics due to photodeterioration caused by light irradiation, and to achieve an optical sensor with improved sensitivity on the longer wavelength side of the layer. .
上述の実施例では、基板側からＰ層、１層、Ｎ層と順次
積層したが、Ｎ層、１層、Ｐ層と積層したものでもよく
、またＮ−Ｉ接合した光センサーにも広く利用できる。In the above embodiment, the P layer, 1 layer, and N layer were laminated in order from the substrate side, but it may also be laminated with N layer, 1 layer, and P layer, and it can also be widely used in N-I junction optical sensors. can.
以上のように、本発明は、透明基板上に、非晶質シリコ
ン半導体層を重畳し、さらに２つの金属電極を順次積層
体するとともに、前記一方の金属電極には、非晶質シリ
コン半導体層に拡散し得る低融点拡散金属を含んでいる
ため、基板−透明導電膜（省略してもよい）−非晶質シ
リコン半導体層−金属電極層を一連の薄膜工程で形成で
きるため、非晶質シリコン半導体層をパターンニングす
ることがないために構造が極めて簡略化する。また、非
晶質シリコン半導体層と接触する導電膜との界面が極め
て良好となり、安定した出力が得られる。As described above, the present invention superimposes an amorphous silicon semiconductor layer on a transparent substrate, and further laminates two metal electrodes in sequence, and one of the metal electrodes is provided with an amorphous silicon semiconductor layer. Since it contains a low melting point diffusion metal that can be diffused into Since the silicon semiconductor layer is not patterned, the structure is extremely simplified. Furthermore, the interface between the amorphous silicon semiconductor layer and the conductive film in contact with it becomes extremely good, and stable output can be obtained.
また、出力を導出する端子が非晶質シリコン半導体層の
上の裏面に集中させることが出来るので、半田デイツプ
などチップ化された光センサーが可能となる。In addition, since the terminals for outputting the output can be concentrated on the back surface above the amorphous silicon semiconductor layer, it becomes possible to form an optical sensor in the form of a chip such as a solder dip.
第１図は本発明に係る光センサーの構造を示す断面図で
ある。第２図は本発明の他の光センサーの断面図である
。第３図は第２図に示した光センサーのＰ層厚みによる
分光感度の変化を示す特性図である。第４図は従来の光
センサーの構造を示す断面図である。FIG. 1 is a sectional view showing the structure of an optical sensor according to the present invention. FIG. 2 is a cross-sectional view of another optical sensor of the present invention. FIG. 3 is a characteristic diagram showing changes in spectral sensitivity depending on the thickness of the P layer of the optical sensor shown in FIG. 2. FIG. 4 is a sectional view showing the structure of a conventional optical sensor.
Claims (1)
光センサーにおいて、 前記一方の金属電極には、非晶質シリコン半導体層に拡
散し得る低融点拡散金属を含んでいることを特徴とする
光センサー。[Claims] In an optical sensor in which two metal electrodes are formed on an amorphous silicon semiconductor layer, one of the metal electrodes contains a low melting point diffusion metal that can diffuse into the amorphous silicon semiconductor layer. A light sensor that is characterized by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63301873A JPH02148773A (en) | 1988-11-29 | 1988-11-29 | Optical sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63301873A JPH02148773A (en) | 1988-11-29 | 1988-11-29 | Optical sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02148773A true JPH02148773A (en) | 1990-06-07 |
Family
ID=17902174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63301873A Pending JPH02148773A (en) | 1988-11-29 | 1988-11-29 | Optical sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02148773A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007052667A1 (en) * | 2005-10-31 | 2007-05-10 | Rohm Co., Ltd. | Photoelectric transducer and process for producing the same |
-
1988
- 1988-11-29 JP JP63301873A patent/JPH02148773A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007052667A1 (en) * | 2005-10-31 | 2007-05-10 | Rohm Co., Ltd. | Photoelectric transducer and process for producing the same |
| JP2007123720A (en) * | 2005-10-31 | 2007-05-17 | Rohm Co Ltd | Photoelectric conversion device and its manufacturing method |
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