JPS61159771A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS61159771A JPS61159771A JP60000508A JP50885A JPS61159771A JP S61159771 A JPS61159771 A JP S61159771A JP 60000508 A JP60000508 A JP 60000508A JP 50885 A JP50885 A JP 50885A JP S61159771 A JPS61159771 A JP S61159771A
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving surface
- oxide layer
- layer
- surface electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 26
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 12
- 239000010936 titanium Substances 0.000 claims abstract description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract 6
- 229910052738 indium Inorganic materials 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011810 insulating material Substances 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 3
- 239000007800 oxidant agent Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- -1 OH4 Chemical class 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- LQJIDIOGYJAQMF-UHFFFAOYSA-N lambda2-silanylidenetin Chemical compound [Si].[Sn] LQJIDIOGYJAQMF-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は光電変換動作する光活性層としてアモルファス
シリコン系半導体を含む光起電力装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a photovoltaic device including an amorphous silicon-based semiconductor as a photoactive layer for photoelectric conversion.
（口１ 従来の技術
光照射を受けると起電力を発生する光起電力装置に於い
て、光電変換動作する光活性層の受光面側に配ｆＩｔさ
れる受光面電極には１発電に寄与する光を光活性層に導
くべく透光性が要求される。(1) Conventional technology In a photovoltaic device that generates an electromotive force when exposed to light irradiation, the light-receiving surface electrode disposed on the light-receiving surface side of the photoactive layer that performs photoelectric conversion contributes to one power generation. Translucency is required to guide light to the photoactive layer.
従来から斯る透光性を呈すべく酸化インジウム（ＩｎＨ
）ｉ）、酸化スズ（８ｎＯｘ）、酸化インジウムスズ（
ＩＴＯ）等の透光性導電酸化物（Ｔｏ。Conventionally, indium oxide (InH) has been used to exhibit such translucency.
)i), tin oxide (8nOx), indium tin oxide (
Transparent conductive oxides (To.
）が用いられている。) is used.
然し乍ら、上記Ｉｎｆｆ１０３や斯るｍｏｓに５ｎｏ２
を３〜１５ｗｔ％ドープしたＩ’ｒＯ等のインジウム系
のＴＯＯにあってはフィルス１クタ（ＦＦ）は良いもの
の開放電圧（Ｖｏｃ）が低く〈。However, 5no2 to the above Inff103 and such mos
Indium-based TOO such as I'rO doped with 3 to 15 wt% of I'rO has a good filter factor (FF) but a low open circuit voltage (Voc).
５ｎ０２等のスズ系のＴＯＯの場合は、その逆でＶＯＯ
は大きい反面、ＦＦが悪いと云う互いに相反する欠点を
持っている。In the case of tin-based TOO such as 5n02, vice versa, VOO
Although it is large, it has the contradictory drawbacks of poor FF.
特開昭５７−１５７５７８号公報及び特開昭５ｆ３−１
４５８２号公報に開示さｎた光起電力装置にあっては受
光ＵＢ１を極としてＩＴＯ及び８ｎＯ２の２層構造とす
ることによって１両者の持つ欠点を相殺し特性を改善す
る方法が提案されている。JP-A-57-157578 and JP-A-5F3-1
In the photovoltaic device disclosed in Japanese Patent No. 4582, a method has been proposed in which the light-receiving device UB1 is used as a pole to have a two-layer structure of ITO and 8nO2, thereby canceling out the drawbacks of both and improving the characteristics. .
（ハ）発明が解決しようとする問題点
熱るに、上記ＩＴＯ１！：８ｎＯｘの両者の屈折率はほ
ぼｔ９〜２．０と実質的に同一であり、２層構造である
にも拘らず後方の光活性層の屈折率との差を緩和するに
至らない結果反射防止膜として有効に利用されてシらず
、また光活性層としてシリコン化合物雰囲気中でのプラ
ズマＯＶＤ法で形成されるアモルファスシリコン、アモ
ルファスシリコンカーバイド、アモルファスシリコンス
ズ。(c) Problems to be solved by the invention The above-mentioned ITO1! : The refractive index of both 8nOx is substantially the same as t9~2.0, and although it has a two-layer structure, the difference with the refractive index of the rear photoactive layer is not alleviated, resulting in reflection. Amorphous silicon, amorphous silicon carbide, and amorphous silicon tin are not effectively used as a preventive film, and are formed as a photoactive layer by a plasma OVD method in a silicon compound atmosphere.
アモルファスシリコンゲルマニウム、及ヒアモルファス
シリコンナイトライド等のアモルファスシリコン系半導
体を用いた場合、斯る半導体形成工。When amorphous silicon-based semiconductors such as amorphous silicon germanium and hyamorphous silicon nitride are used, such a semiconductor forming process is required.
程に於けるプラズマ反応時、受光面電極の構成元素であ
るＩｎ、８ｎ、Ｏが半導体膜中に拡散し光電変換特性の
向上を朋、害する要因となっている。During the plasma reaction, In, 8n, and O, which are constituent elements of the light-receiving surface electrode, diffuse into the semiconductor film and become a factor that impairs the improvement of photoelectric conversion characteristics.
（ロ）問題点を解決するための手段
本発明光起電力装置は上述の如き問題点を解決するため
に、少なくともインジウム系の透光性導電酸化物層を含
む受光面電極を用いると共に。(b) Means for Solving the Problems In order to solve the above-mentioned problems, the photovoltaic device of the present invention uses a light-receiving surface electrode that includes at least an indium-based light-transmitting conductive oxide layer.
上記インジウム系の透光性導電酸化物ｌ−と光電変換動
作するアモルファスシリコン系半導体を主体とする光活
性層との間に、上記受光面電極より肉薄なチタン系の透
光性酸化物層を配置した構成にある。A titanium-based transparent oxide layer thinner than the light-receiving surface electrode is provided between the indium-based transparent conductive oxide l- and the photoactive layer mainly composed of an amorphous silicon-based semiconductor that performs photoelectric conversion. It's in the configured configuration.
（ホ）作 用
上述の如く、インジウム系の透光性導電酸化物層と光活
性層との間に配置される肉薄なチタン系の透光性酸化物
層は屈折率がＩ’ｒＯや８ｎＯ！等のＴＣＯより高く１
元活性層のそれより小さいので、Ｔ・ａＯと光活性層と
の屈折率の差を緩和すべく作用する。(E) Function As mentioned above, the thin titanium-based transparent oxide layer disposed between the indium-based transparent conductive oxide layer and the photoactive layer has a refractive index of I'rO or 8nO. ! 1 higher than the TCO of
Since it is smaller than that of the original active layer, it acts to alleviate the difference in refractive index between T·aO and the photoactive layer.
（へ）実施例
第１図は本発明光起電力装置を光活性層（１）を支持す
べき基板（２）を受光面とした場合の一実施例を示して
いる。即ち、基板（２）は透光性且つ絶縁性の材料１例
えばガラスから成り、その基板（２）の一方の主面には
インジウム系の透光性導電酸化物層が受光面電極（３）
として配置されている。上記インジウム系の透光性導電
酸化物とはインジウムの酸化物であるＩｎ２Ｏ！のみな
らず該Ｉｎ！Ｏ！に８ｎＯ２やアンチモン（８ｂ）を３
〜１５ｗｔ％と僅かにドープしたＩＴＯやｓｂドープド
Ｉｎ１ｉ等を含み１本発明にあっては最適なＩ’ｒＯの
単独構成として以下に説明する。(F) Embodiment FIG. 1 shows an embodiment of the photovoltaic device of the present invention in which the substrate (2) which supports the photoactive layer (1) is used as the light receiving surface. That is, the substrate (2) is made of a light-transmitting and insulating material 1, such as glass, and on one main surface of the substrate (2), an indium-based light-transmitting conductive oxide layer is provided as a light-receiving surface electrode (3).
It is located as. The above-mentioned indium-based transparent conductive oxide is an oxide of indium, In2O! Not only the In! O! Add 8nO2 or antimony (8b) to
This will be described below as a single structure of I'rO, which is optimal for the present invention and includes ITO slightly doped with ~15 wt%, sb-doped In1i, etc.
上記ＩＴＯの受光面電極（３）の露出面、即ち基板（２
）と接触しない方の面にはチタン系の透光性酸化物層（
４）が配ｖ１）され、この透光性酸化物層（４）は光照
射を受けると光電変換動作するアモルファスシリコン系
半導体を主体とする光活性層（１）と接触する。The exposed surface of the ITO light-receiving surface electrode (3), that is, the substrate (2)
) is coated with a titanium-based transparent oxide layer (
4) is arranged v1), and this transparent oxide layer (4) comes into contact with a photoactive layer (1) mainly composed of an amorphous silicon-based semiconductor that performs photoelectric conversion when irradiated with light.
上記チタン系の透光性酸化物層（４）はチタン（’Ｉ’
ｉ）を主体とする酸化物層でＴ１０！が好適であり。The titanium-based transparent oxide layer (4) is made of titanium ('I'
T10 with an oxide layer mainly composed of i)! is preferable.
斯るＴ１０！はシート抵抗値がＩ’Ｉ’Ｏや８ｎＯ！等
に比して高いので、その膜厚としては受光面電極（３）
のそれより肉薄であることが肝要である。その意味に於
いて通常ＩＴＯｊｉｌｉ独構成の受光面構成（３）は６
００λ乃至４０００に程度の膜厚のものが使用されるの
で、’ｒｉｏｚから成る酸化物層（４）にあっては約３
０λ乃至７００λの膜厚が好ましい。Such T10! The sheet resistance value is I'I'O or 8nO! The film thickness is higher than that of the light-receiving surface electrode (3).
It is important that it be thinner than that of . In that sense, the light-receiving surface configuration (3) of the ITOjili-only configuration is usually 6
The thickness of the oxide layer (4) made of 'rioz is approximately 3.
A film thickness of 0λ to 700λ is preferable.
上記アモルファスシリコン系の光活性層（１）は光電変
換動作すべくその膜中にｐｉｎ、ｐｉｎｐｉｎ。The amorphous silicon photoactive layer (1) has pins in it for photoelectric conversion.
ｐｎｎ、ｐｎ 等の周知の単−或いはタンデム構造の
半導体接合を備えてシリ、ＢＩＨ４，８１ｚＨ４，８ｉ
Ｆ４等のシリコン（８１）化合物雰囲気中でのプラズマ
ＯＶＤ法や光ＯＶＤ法により形成される。例えば受光面
側から見てｐｉｎ 接合を備える場合、先ずＴｌＯ２の
透光性酸化物層（４）上に８１化合物雰囲気中にｐ型ド
ーパントであるボロン（Ｂｌを含むジボラン（Ｂ２Ｈ４
）が僅かに添加されることによってｐ型のアモルファス
シリコンが得られ１次いでＢｚＨ６のない状態、即ちノ
ンドープな状態により真性（１型）のアモルファスシリ
コンが形成され、最後にｎ型ドーパントであるリン（ｐ
）を含むフｔスフィン（ＰＨｉＳ）の添加によりｎ型に
価電子制御されたアモルファスシリコンを積層すること
によって、上記ｐｉｎ 接合を完成させる。Silicon, BIH4, 81zH4, 8i with well-known single or tandem structure semiconductor junctions such as pnn, pn, etc.
It is formed by a plasma OVD method or a light OVD method in an atmosphere of a silicon (81) compound such as F4. For example, when a pin junction is provided when viewed from the light-receiving surface side, diborane (B2H4
) is added in a small amount to obtain p-type amorphous silicon, then in the absence of BzH6, that is, in a non-doped state, intrinsic (type 1) amorphous silicon is formed, and finally, the n-type dopant phosphorus ( p
) The above pin junction is completed by stacking amorphous silicon whose valence electrons are controlled to be n-type by addition of phthalocyanine (PHiS).
またｐ型層として上記アモルファスシリコンより窓効果
の大きいアモルファスシリコンカーバイドを使用する場
合、８１化合物ガスにＯＨ４，０ｖＨｂ等のハイドロカ
ーボンを混合することＫより達成できる。他のアモルフ
ァスシリコン系の半導体にりいてもそれらの元素化合物
ガスを使用すれば、所望な半導体膜が得られる。Furthermore, when amorphous silicon carbide, which has a greater window effect than the amorphous silicon described above, is used as the p-type layer, this can be achieved by mixing a hydrocarbon such as OH4,0vHb with the 81 compound gas. For other amorphous silicon-based semiconductors, desired semiconductor films can be obtained by using these elemental compound gases.
このように半導体接合を備えた光活性層（１）の背面に
は、該光活性層（１）とオーｉｗり接触するアルミニウ
ム（Ａ／）、銀（ｐ、ｙ）、チタン銀合金（ＴｉＡｆ）
等の単独更には上記Ｔｏｏを含めた積層構造の背面電ｍ
（５）が設けられ、この背面電極（５）と受光面電極
（３）から光活性層（ＩＩの光電変換出力が導出される
。The backside of the photoactive layer (1) with the semiconductor junction is thus coated with aluminum (A/), silver (p,y), titanium-silver alloy (TiAf), which is in direct contact with the photoactive layer (1). )
etc. alone, or a laminated structure including the above-mentioned Too.
(5) is provided, and the photoelectric conversion output of the photoactive layer (II) is derived from the back electrode (5) and the light-receiving surface electrode (3).
次に有効発電面積１−の光起電力装置による比較試験の
結果を用いて本発明の詳細な説明する。Next, the present invention will be explained in detail using the results of a comparative test using a photovoltaic device with an effective power generation area of 1-.
光活性層（１）を支持すべき基板（２）としてはガラス
を使用しその他の構成は第１表の通りである。Glass was used as the substrate (2) to support the photoactive layer (1), and the other components were as shown in Table 1.
上記試料１〜３には透光性酸化物層（４）が存在しない
従来構成であり、試料４〜９は本発明の構成である。そ
してこれら受光面電極（３）或いは受光面電極（３）及
び透光性酸化物層（４）を基板（１）の−主直に配置し
た試料１〜９を同時にプラズマＯＶＤ装置ニ取込み、ｐ
型のアモルファスシリコンカーバイドと１型及びｎ型の
アモルファスシリコンをこの順序で堆積することによっ
て試料１〜９に同一構成にあるｐｉｎ 接合型の光活性
層（１）を形成し、最後に背面電極（５）としてＡＩ！
を蒸着により被着してｐｌＤ 接合型アモルファスシリ
コン系光起電力装置を完成さ−ｔ！：念。Samples 1 to 3 have the conventional structure without the transparent oxide layer (4), and Samples 4 to 9 have the structure of the present invention. Then, samples 1 to 9 in which the light-receiving surface electrode (3) or the light-receiving surface electrode (3) and the transparent oxide layer (4) are arranged directly on the substrate (1) are taken into the plasma OVD apparatus at the same time.
By depositing type amorphous silicon carbide and type 1 and n type amorphous silicon in this order, a pin junction type photoactive layer (1) having the same structure is formed on samples 1 to 9, and finally a back electrode ( 5) As AI!
A PLD junction type amorphous silicon based photovoltaic device was completed by depositing it by vapor deposition. : Nen.
尚、上記ＩＴ０，８ｎＯ！の受光面電極（３）はシート
低抗の小さいものが得られる電子ビーム蒸着法により形
成され、Ｔｉ０ｆｆｉの透光性酸化物層（４）はＴｉｔ
−陰極ターゲットとするアルゴン（Ａｒ）５ Ｘ １０
− Ｔｏｒｒ、酸素（０！ ） ４ ｘ’ ０−’Ｉ’
ｏｒｒ ｓ基板（２）温度１００℃の条件による通常の
ＲＦスパッタリングにより形成し九。In addition, the above IT0.8nO! The light-receiving surface electrode (3) is formed by the electron beam evaporation method, which can obtain a sheet with a small resistance, and the transparent oxide layer (4) of Ti0ffi is formed using TiOffi.
- Argon (Ar) 5 x 10 as cathode target
- Torr, oxygen (0!) 4 x'0-'I'
orrs Substrate (2) Formed by normal RF sputtering at a temperature of 100°C.
第２表は上記試料１〜９のｐｉｎ 接合型アモルファス
シリコン系光起電力装置の光電変換特性をＡＭ−１，１
００ｓ＊Ｗ／−のソーラシ、ミレータを用いて測定した
結果である。＠２１に於いて、Ｖｏｃ、Ｉｓｃ、Ｆ’Ｆ
及びηは夫々開放電圧、短絡層流。Table 2 shows the photoelectric conversion characteristics of the pin junction type amorphous silicon photovoltaic devices of Samples 1 to 9 AM-1, 1
These are the results of measurements using a 00s*W/- Sourasi and Mirator. @21, Voc, Isc, F'F
and η are open circuit voltage and short circuit laminar flow, respectively.
フィルフチフタ及び光電変換出力を示している。The filter and photoelectric conversion output are shown.
第２表
上記第２表から明らかな如く１本発明を実施せる試料４
〜９にあっては、従来の受光面を極（３）としてＩ’Ｉ
’Ｏ及び８ｎＯ！を単独構成とした試料１及び２．更に
はＩＴＯ及びａｎＯ！を積層した試料１及び２の改良に
係る試料３と比較して、りが高くなることが確認でき丸
。特に、Ｔｉ０ｆｆｉの透光性酸化物層（４）の膜厚に
して試料６〜８の１０ＯＡ乃至５５０Ａａ度の範囲に於
いてりが８％を越える結果が得られた。Table 2 As is clear from the above Table 2, 1 Sample 4 that can carry out the present invention
~9, I'I with the conventional light receiving surface as the pole (3)
'O and 8nO! Samples 1 and 2 each have a single configuration. Furthermore, ITO and anO! Compared to Sample 3, which is an improved version of Samples 1 and 2, in which layers were laminated, it was confirmed that the resistance was higher. In particular, results were obtained in which the film thickness of the transparent oxide layer (4) of Ti0ffi exceeded 8% in the range of 10OA to 550Aa degrees for Samples 6 to 8.
斯るηの向上の理由としては、上記Ｔ１０！の透光性酸
化物層（４）の屈折率が約Ｚ４〜Ｚ８であり。The reason for this improvement in η is the above T10! The refractive index of the transparent oxide layer (4) is about Z4 to Z8.
ＩＴＯの受光面電極（３）のそれが上述の如く約ｔ９〜
２０．またアモルファスシリコン系の光活性層（１）は
約６．４〜４と受光面電ｆ！ （３）と光活性層（１）
の中間値をとるために１両者の屈折率との差を緩和する
ことができ１反射防止膜として有効に利用されたためと
考えられると共に、Ｔｉｏｘの如きチタン系の酸化物層
（４）はＳｎｏｗやＩＴＯ等のＴｏＯＫ比して化学的に
安定であり耐プラズマ性に富む結果、光活性層（１）中
への構成元素の拡散が抑圧され九ためと考えられる。As mentioned above, the ITO light-receiving surface electrode (3) is about t9~
20. Furthermore, the amorphous silicon-based photoactive layer (1) has a light-receiving surface area f! of approximately 6.4 to 4. (3) and photoactive layer (1)
This is thought to be because the difference in refractive index between the two can be alleviated by taking an intermediate value between the two, and the titanium-based oxide layer (4) such as Tiox is used effectively as an anti-reflection film. It is thought that this is because the diffusion of constituent elements into the photoactive layer (1) is suppressed because it is chemically stable and has high plasma resistance compared to ToOK such as ITO and ITO.
第２図は本発明の他の実施列を示し、ｆａ１図の実施例
とは光入射方向の点に於いて相違する。即ち、この実施
例にあっては光は基板（２）１ｄｌｌからではなく、基
板（２）の反対側から照射せしめられる。従って基板（
２）自身がステンレス−Ａ／等から成り導電性を有する
場合、基板（２）の導電表面にアモルファスシリコン系
の光活性層（１）が形成された後、その表面にチタン系
の透光性酸化物層（４）が形成さｆｉ。FIG. 2 shows another embodiment of the present invention, which differs from the embodiment shown in FIG. fa1 in the direction of light incidence. That is, in this embodiment, light is emitted not from the substrate (2) 1dll, but from the opposite side of the substrate (2). Therefore, the substrate (
2) When the substrate itself is made of stainless steel A or the like and has conductivity, an amorphous silicon-based photoactive layer (1) is formed on the conductive surface of the substrate (2), and then a titanium-based light-transmitting layer is formed on the surface of the amorphous silicon-based photoactive layer (1). An oxide layer (4) is formed fi.
最後にこの酸化物層（４）より肉厚なインジウム系の透
光性導電酸化物層の受光面成極（２）が積層被着される
。また基板（２）自身が絶縁体であってもその表面に導
電体を被着すｉば基本的には上記構成と同一となる。Finally, a light-receiving surface polarization layer (2) of an indium-based transparent conductive oxide layer, which is thicker than the oxide layer (4), is deposited. Furthermore, even if the substrate (2) itself is an insulator, if a conductor is attached to its surface, the structure is basically the same as that described above.
（）Ｉ 発明の効果
本発明光起電力装置は以上の説明から明らかな如く、イ
ンジウム系の透光性導電酸化物層とアモルファスシリコ
ン系の光活性層との間に、上記透光性導電酸化物層を含
む受光面電極より肉薄なチタン系の透光性酸化物層を配
置することによって、斯る透光性酸化物層は反射防止膜
として有効に作用し、光電変臭効率を大幅に向上させる
ことができる。()I Effects of the Invention As is clear from the above description, the photovoltaic device of the present invention has the above-mentioned light-transmitting conductive oxide layer between the indium-based light-transmitting conductive oxide layer and the amorphous silicon-based photoactive layer. By arranging a titanium-based light-transmitting oxide layer that is thinner than the light-receiving surface electrode containing the material layer, the light-transmitting oxide layer effectively acts as an anti-reflection film, greatly increasing the photoelectric odor conversion efficiency. can be improved.
第１図は本発明の一実施例の断頁図、第２図は本発明の
他の実施例の断面図、を夫々示している。
（１）−光活性層、 （３）・・・受光面電極、 （
４）−・透光性酸化物層％ （５）−・・背面電極。
第１図
＼、
了
ト
印FIG. 1 is a cross-sectional view of one embodiment of the present invention, and FIG. 2 is a cross-sectional view of another embodiment of the present invention. (1)-photoactive layer, (3)...light-receiving surface electrode, (
4)--Transparent oxide layer% (5)--Back electrode. Figure 1 ＼, Completed mark
Claims (4)
シリコン系半導体を主体とする光活性層と、該光活性層
を挾んで受光面側と背面側に設けられた受光面電極及び
背面電極と、を備え、上記受光面電極は少なくとも、イ
ンジウム系の透光性導電酸化物層を含むと共に、該イン
ジウム系の透光性導電酸化物層と光活性層との間に上記
受光面電極より肉薄なチタン系の透光性酸化物層を配置
したことを特徴とする光起電力装置。(1) A photoactive layer mainly made of an amorphous silicon-based semiconductor that performs photoelectric conversion when irradiated with light; a light-receiving surface electrode and a back electrode provided on the light-receiving surface side and the back side with the photoactive layer sandwiched therebetween; The light-receiving surface electrode includes at least an indium-based light-transmitting conductive oxide layer, and a layer thinner than the light-receiving surface electrode between the indium-based light-transmitting conductive oxide layer and the photoactive layer. A photovoltaic device characterized by disposing a titanium-based transparent oxide layer.
ることを特徴とした特許請求の範囲第１項記載の光起電
力装置。(2) The photovoltaic device according to claim 1, wherein the titanium-based light-transmitting oxide layer is titanium oxide.
あることを特徴とした特許請求の範囲第２項記載の光起
電力装置。(3) The photovoltaic device according to claim 2, wherein the titanium oxide film has a thickness of about 30 Å to 700 Å.
光活性層はアモルファスシリコンカーバイドであること
を特徴とした特許請求の範囲第１項乃至第３項記載の光
起電力装置。(4) The photovoltaic device according to any one of claims 1 to 3, wherein the photoactive layer in the portion that contacts the titanium-based transparent oxide layer is made of amorphous silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60000508A JPS61159771A (en) | 1985-01-07 | 1985-01-07 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60000508A JPS61159771A (en) | 1985-01-07 | 1985-01-07 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61159771A true JPS61159771A (en) | 1986-07-19 |
Family
ID=11475709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60000508A Pending JPS61159771A (en) | 1985-01-07 | 1985-01-07 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61159771A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5449924A (en) * | 1993-01-28 | 1995-09-12 | Goldstar Electron Co., Ltd. | Photodiode having a Schottky barrier formed on the lower metallic electrode |
| JP2004095669A (en) * | 2002-08-29 | 2004-03-25 | Toyota Motor Corp | Photoelectric conversion element |
| WO2005027229A1 (en) * | 2003-08-29 | 2005-03-24 | Asahi Glass Company, Limited | Base with transparent conductive film and method for producing same |
| JP2005244073A (en) * | 2004-02-27 | 2005-09-08 | National Institute Of Advanced Industrial & Technology | Solar cell and method for manufacturing the same |
| WO2007027498A1 (en) * | 2005-08-30 | 2007-03-08 | Pilkington Group Limited | Light transmittance optimizing coated glass article for solar cell and method for making |
| WO2008024206A1 (en) * | 2006-08-24 | 2008-02-28 | Guardian Industries Corp. | Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same |
| WO2010023867A1 (en) * | 2008-08-25 | 2010-03-04 | 株式会社エバテック | Thin-film solar cell and manufacturing method therefore and substrate for thin-film solar cell |
| JP2010225735A (en) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | Photosensor and method of manufacturing the same |
| EP1756871A4 (en) * | 2004-05-24 | 2015-12-16 | First Solar Inc | Photovoltaic cell including capping layer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121685A (en) * | 1979-03-12 | 1980-09-18 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| JPS5789265A (en) * | 1980-11-26 | 1982-06-03 | Asahi Chem Ind Co Ltd | Photo electromotive element |
-
1985
- 1985-01-07 JP JP60000508A patent/JPS61159771A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121685A (en) * | 1979-03-12 | 1980-09-18 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| JPS5789265A (en) * | 1980-11-26 | 1982-06-03 | Asahi Chem Ind Co Ltd | Photo electromotive element |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5449924A (en) * | 1993-01-28 | 1995-09-12 | Goldstar Electron Co., Ltd. | Photodiode having a Schottky barrier formed on the lower metallic electrode |
| JP2004095669A (en) * | 2002-08-29 | 2004-03-25 | Toyota Motor Corp | Photoelectric conversion element |
| WO2005027229A1 (en) * | 2003-08-29 | 2005-03-24 | Asahi Glass Company, Limited | Base with transparent conductive film and method for producing same |
| JP2005244073A (en) * | 2004-02-27 | 2005-09-08 | National Institute Of Advanced Industrial & Technology | Solar cell and method for manufacturing the same |
| EP1756871A4 (en) * | 2004-05-24 | 2015-12-16 | First Solar Inc | Photovoltaic cell including capping layer |
| WO2007027498A1 (en) * | 2005-08-30 | 2007-03-08 | Pilkington Group Limited | Light transmittance optimizing coated glass article for solar cell and method for making |
| JP2009505941A (en) * | 2005-08-30 | 2009-02-12 | ピルキングトン・グループ・リミテッド | Coated glass article for optimizing light transmittance for use in solar cells and method for producing the same |
| US7968201B2 (en) | 2005-08-30 | 2011-06-28 | Pilkington Group Limited | Light transmittance optimizing coated glass article for solar cell and method for making |
| KR101252322B1 (en) * | 2005-08-30 | 2013-04-08 | 필킹톤 노쓰 아메리카, 인코포레이티드 | Light transmittance optimizing coated glass article for solar cell and method for making |
| WO2008024206A1 (en) * | 2006-08-24 | 2008-02-28 | Guardian Industries Corp. | Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same |
| WO2010023867A1 (en) * | 2008-08-25 | 2010-03-04 | 株式会社エバテック | Thin-film solar cell and manufacturing method therefore and substrate for thin-film solar cell |
| JP2010225735A (en) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | Photosensor and method of manufacturing the same |
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