JPH0733301Y2 - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPH0733301Y2 JPH0733301Y2 JP1989149932U JP14993289U JPH0733301Y2 JP H0733301 Y2 JPH0733301 Y2 JP H0733301Y2 JP 1989149932 U JP1989149932 U JP 1989149932U JP 14993289 U JP14993289 U JP 14993289U JP H0733301 Y2 JPH0733301 Y2 JP H0733301Y2
- Authority
- JP
- Japan
- Prior art keywords
- film
- photoelectric conversion
- transparent conductive
- transparent
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【考案の詳細な説明】 （イ） 産業上の利用分野 本考案は光電変換装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a photoelectric conversion device.
（ロ） 従来の技術 近年、ガラス等の透明基体上に透明導電膜を形成し、次
いで非晶質シリコン（ａ−Si）を主成分とする光電変換
素子を形成し、その後Al等の電極を形成した低コストの
太陽電池が知られている。これらの構成要素のうち、透
明導電膜としてITO膜、SnO2膜が用いられている。ま
た、最近になって特開昭63-80413号公報に開示された如
く、ZnO膜についても検討されるようになった。(B) Conventional technology In recent years, a transparent conductive film is formed on a transparent substrate such as glass, then a photoelectric conversion element containing amorphous silicon (a-Si) as a main component is formed, and then an electrode such as Al is formed. Formed low cost solar cells are known. Among these components, the ITO film and the SnO 2 film are used as the transparent conductive film. Further, recently, as disclosed in JP-A-63-80413, a ZnO film has been studied.
（ハ） 考案が解決しようとする課題 しかしながら、ITO膜、SnO2膜ともに、通常ａ−Si膜の
形成に用いられるSi水素化物を出発材料とするグロー放
電法では、ａ−Si膜形成時の透明導電膜が水素プラズマ
にさらされるため、膜表面が還元され、その結果可視光
透過率の減少、面積抵抗の増加がおこり、太陽電池の出
力を低下させる原因の１つになっていた。さらにITO膜
はInイオンの拡散も問題になっている。また、ZnO膜は
この還元性雰囲気に対して強いと言われているものの、
真空状態での基板加熱及び大気中の酸素吸着により面積
抵抗が増加する現象がある。(C) Problems to be solved by the invention However, in the glow discharge method using Si hydride as a starting material, which is usually used for forming an a-Si film, for both the ITO film and the SnO 2 film, the a-Si film formation Since the transparent conductive film is exposed to hydrogen plasma, the film surface is reduced, resulting in a decrease in visible light transmittance and an increase in sheet resistance, which is one of the causes for lowering the output of the solar cell. Furthermore, the diffusion of In ions has also become a problem in ITO films. Although the ZnO film is said to be strong against this reducing atmosphere,
There is a phenomenon that the sheet resistance increases due to substrate heating in a vacuum state and adsorption of oxygen in the atmosphere.
本考案は、透明導電膜としてZnO膜を用いると真空状態
での基板加熱及び大気中への長時間放置や加熱処理によ
り面積抵抗が増加する点及びそれを受光面側の電極とし
て用いたとき、斯る面積抵抗の増加に伴ない抵抗損失が
増大する点を解決せんとするものである。In the present invention, when a ZnO film is used as a transparent conductive film, the area resistance increases when the substrate is heated in a vacuum and left in the air for a long time or heat treatment, and when it is used as an electrode on the light receiving surface side, This is to solve the problem that the resistance loss increases as the area resistance increases.
（ニ） 課題を解決するための手段 本考案は上記課題を解決するために、透明基体と、該透
明基体上に形成された酸化亜鉛の透明導電膜と、該透明
導電膜上全面に重畳された透光性の金属薄膜と、該金属
薄膜に接して設けられた光電変換膜とからなることを特
徴とする。(D) Means for Solving the Problem In order to solve the above-mentioned problems, the present invention has a transparent substrate, a transparent conductive film of zinc oxide formed on the transparent substrate, and a transparent conductive film overlaid on the entire surface. And a photoelectric conversion film provided in contact with the metal thin film.
（ホ） 作用 上述の如く酸化亜鉛の透明導電膜上全面に金属薄膜を重
畳することによって、上記金属薄膜が透明導電膜の酸素
を含む雰囲気との接触を遮断すると共に、真空中の加熱
処理に対しても保護膜として作用する。(E) Action As described above, by overlapping the metal thin film on the entire surface of the zinc oxide transparent conductive film, the metal thin film blocks the contact of the transparent conductive film with the atmosphere containing oxygen, and the heat treatment in vacuum is performed. It also acts as a protective film.
（ヘ） 実施例 第１図は、本考案の製造途中である透明導電体の断面を
模式的に示したものである。（１）はガラス等の透明基
体、（２）は該基体（１）の一主面に形成された酸化亜
鉛（ZnO）の透明導電膜で、該導電膜（２）中には、導
電率を低下させるために周期律表第III族又は第IV族元
素が数％程度適宜添加されている。（３）は上記ZnOの
透明導電膜（２）を覆う金属薄膜で、例えばTi、Ni、P
d、Au、Ag、Pt等からなり、透光性を呈すべく約20〜300
Åの厚みを備えている。斯る構成の透明導電体は以下の
ようにして作成された。先ず、厚み1.1mm、基板サイズ1
00mm×100mmの表面が充分に洗浄され、乾燥されたソー
ダライムガラスの透明基体（１）を準備する。次いでこ
の透明基体（１）をスパッタリング装置にセットし、Si
が酸化物の形で2wt％添加された酸化亜鉛をターゲット
として、高周波スパッタ法により膜厚約3000ÅのSiドー
プのZnOからなる透明導電膜（２）を成膜した。しかる
後、同一のスパッタリング装置を利用して装置内の真空
状態を維持しつつ、ターゲットを金属、例えばTiに切替
え膜厚約50ÅのTi薄膜（３）を重畳した。(F) Example FIG. 1 schematically shows a cross section of a transparent conductor in the process of manufacturing the present invention. (1) is a transparent substrate such as glass, (2) is a transparent conductive film of zinc oxide (ZnO) formed on one main surface of the substrate (1), and the conductivity of the conductive film (2) is In order to reduce the temperature, a group III element or a group IV element of the periodic table is appropriately added by about several%. (3) is a thin metal film that covers the transparent conductive film (2) of ZnO, such as Ti, Ni, P
It is composed of d, Au, Ag, Pt, etc., and is about 20-300 to exhibit translucency.
Has a thickness of Å. The transparent conductor having such a structure was prepared as follows. First, thickness 1.1mm, substrate size 1
A transparent substrate (1) of soda lime glass whose surface is 00 mm × 100 mm is thoroughly washed and dried is prepared. Next, this transparent substrate (1) was set in a sputtering device and Si
A transparent conductive film (2) made of Si-doped ZnO having a film thickness of about 3000 Å was formed by a high frequency sputtering method using zinc oxide added in the form of an oxide of 2 wt% as a target. After that, the same sputtering apparatus was used to maintain a vacuum state in the apparatus, and a target, for example, Ti, was overlaid with a Ti thin film (3) having a switching film thickness of about 50Å.
このようにして作成された透明導電体について面積抵抗
を測定したところ15Ω/sqと、フッ素ドープのSnO2とほ
ぼ同等で、ITOより低抵抗の膜が得られた。また、可視
光領域全域において85％以上の透過率が得られ、この抵
抗値及び透過率は、ともに光電変換装置、液晶表示装
置、ａ−Siの薄膜トランジスタからなるアクティブマト
リックスを備えた液晶表示装置に使用できるものであ
る。この透明導電体に対して、真空中で300℃の加熱処
理を施したところ、面積抵抗及び透過率ともに変化がな
く、熱的に安定であった。When the sheet resistance of the transparent conductor thus prepared was measured, a film having a resistance of 15 Ω / sq, which was almost the same as that of fluorine-doped SnO 2 and having a lower resistance than ITO, was obtained. In addition, a transmittance of 85% or more is obtained in the entire visible light region, and the resistance value and the transmittance are both in a photoelectric conversion device, a liquid crystal display device, and a liquid crystal display device including an active matrix including a-Si thin film transistors. It can be used. When this transparent conductor was subjected to heat treatment at 300 ° C. in vacuum, neither area resistance nor transmittance was changed, and it was thermally stable.
第２図は、本考案の光電変換装置としての太陽電池の断
面を模式的に示したものである。即ち、この太陽電池
は、特開昭62-33477号公報に開示された如く上記透明導
電体を透光性導電基板（４）とし、この透光性導電基板
（４）の透明導電膜（2a）（2b）…及び金属薄膜（3a）
（3b）を複数の領域に分割し、直列接合部（５）…に導
電ペースト（６）…を配置してこれを大気中で焼成又は
熱硬化させた後、ａ−Siを主体とした半導体接合を備え
る光電変換膜（7a）（7b）…が、SiH4を主な出発ガスと
する減圧雰囲気中で、上記基板（４）を約150℃〜250℃
に加熱保持した状態での高周波グロー放電により成膜さ
れる。従って光電変換膜（7a）（7b）…の成膜に先立っ
て大気、即ち酸素を含む雰囲気に露出せしめられるが、
透明導電膜（2a）（2b）…は金属薄膜（3a）（3b）…に
より被覆され、過酸化状態となるのを阻止されている。
この光電変換膜（7a）（7b）は全面に成膜後、同じく全
面に金属膜を被着後レーザビームを使用して直列接続形
態に分割並びに電気的結合が施される。斯る金属膜（8
a）（8b）…は、光入射が透光性導電基板（４）側から
為されるので、透光性が要求されず、従って低抵抗とな
るべく少なくとも1000Å以上の膜厚を備えている。FIG. 2 schematically shows a cross section of a solar cell as a photoelectric conversion device of the present invention. That is, in this solar cell, the transparent conductor is used as the transparent conductive substrate (4) as disclosed in JP-A-62-33477, and the transparent conductive film (2a) of the transparent conductive substrate (4) is used. ) (2b) ... and thin metal film (3a)
(3b) is divided into a plurality of regions, conductive pastes (6) are arranged on the series junctions (5), and the paste is baked or heat-cured in the air, and then a semiconductor mainly composed of a-Si The photoelectric conversion films (7a) (7b) having a junction, the substrate (4) at about 150 ℃ ~ 250 ℃ in a reduced pressure atmosphere with SiH 4 as the main starting gas.
A film is formed by high-frequency glow discharge in a state of being heated and held at. Therefore, prior to the formation of the photoelectric conversion films (7a) (7b) ..., they are exposed to the atmosphere, that is, an atmosphere containing oxygen.
The transparent conductive films (2a) (2b) ... Are covered with the metal thin films (3a) (3b).
After the photoelectric conversion films (7a) and (7b) are formed on the entire surface, a metal film is also deposited on the entire surface, and a laser beam is used to divide and electrically couple them in series. Such a metal film (8
Since light is incident on the transparent conductive substrate (4) side in a) (8b) ..., Translucency is not required, and therefore the film has a film thickness of at least 1000 Å or more so as to have low resistance.
このように光電変換膜（５）の作成に先立って大気中で
の加熱処理が施されるにも拘らず、ZnOの透明導電膜（2
a）（2b）…は既に金属薄膜（3a）（3b）…により保護
されていることにより、斯る加熱処理に起因する面積抵
抗の増大は見られない。その結果、太陽電池として、抵
抗損失の増加を招くこともない。そして、斯るZnOの透
明導電膜（２）は、従来のSnO2膜やITO膜に比して、所
望のパターンを得るべきケミカルエッチングが極めて容
易であることから、作業性に富み生産性の向上が図れ
る。As described above, the ZnO transparent conductive film (2) is used even though the heat treatment in the atmosphere is performed prior to the formation of the photoelectric conversion film (5).
Since a) (2b) ... Is already protected by the metal thin films (3a) (3b) ..., no increase in sheet resistance due to such heat treatment is observed. As a result, the resistance loss of the solar cell does not increase. In addition, such a ZnO transparent conductive film (2) is extremely easy to perform chemical etching to obtain a desired pattern, as compared with a conventional SnO 2 film or an ITO film, and thus has high workability and high productivity. Can be improved.
（ト） 考案の効果 本考案は以上の説明から明らかな如く、金属薄膜が透明
導電膜の酸素を含む雰囲気との接触を遮断すると共に、
真空中の加熱処理に対しても保護膜として作用するの
で、当該透明導電膜の抵抗値の増大を抑圧し、光電変換
装置にあっては抵抗損失の低減が図れる。(G) Effect of the Invention As is clear from the above description, the present invention prevents the metal thin film from contacting the transparent conductive film with the atmosphere containing oxygen.
Since it also acts as a protective film against heat treatment in vacuum, it is possible to suppress an increase in the resistance value of the transparent conductive film and reduce resistance loss in the photoelectric conversion device.
第１図は本考案の製造途中を示す透明導電体を模式的に
示す断面図、第２図は本考案を実施する太陽電池を模式
的に示す断面図である。FIG. 1 is a cross-sectional view schematically showing a transparent conductor showing the manufacturing process of the present invention, and FIG. 2 is a cross-sectional view schematically showing a solar cell embodying the present invention.
Claims (1)
化亜鉛の透明導電膜と、該透明導電膜上全面に重畳され
た透光性の金属薄膜と、該金属薄膜に接して設けられた
光電変換膜と、からなる光電変換装置。1. A transparent substrate, a zinc oxide transparent conductive film formed on the transparent substrate, a translucent metal thin film overlying the entire surface of the transparent conductive film, and a metal thin film provided in contact with the transparent thin film. A photoelectric conversion device including the obtained photoelectric conversion film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989149932U JPH0733301Y2 (en) | 1989-12-26 | 1989-12-26 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989149932U JPH0733301Y2 (en) | 1989-12-26 | 1989-12-26 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0388223U JPH0388223U (en) | 1991-09-10 |
| JPH0733301Y2 true JPH0733301Y2 (en) | 1995-07-31 |
Family
ID=31696305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989149932U Expired - Lifetime JPH0733301Y2 (en) | 1989-12-26 | 1989-12-26 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0733301Y2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI234885B (en) * | 2002-03-26 | 2005-06-21 | Fujikura Ltd | Electroconductive glass and photovoltaic cell using the same |
| JP4954855B2 (en) * | 2002-03-26 | 2012-06-20 | 株式会社フジクラ | Manufacturing method of dye-sensitized solar cell |
| JP2010258368A (en) * | 2009-04-28 | 2010-11-11 | Tohoku Univ | Electronic device and method of manufacturing the same |
| JP2014041931A (en) * | 2012-08-22 | 2014-03-06 | Honda Motor Co Ltd | Method for manufacturing solar cell |
| JP2013251582A (en) * | 2013-09-17 | 2013-12-12 | Tohoku Univ | Electronic device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6012604A (en) * | 1983-06-30 | 1985-01-23 | 日東電工株式会社 | Composite material with transparent conductive film |
| JPS6233477A (en) * | 1985-08-07 | 1987-02-13 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| JPS62127586U (en) * | 1986-02-03 | 1987-08-13 | ||
| JPS63289533A (en) * | 1987-05-22 | 1988-11-28 | Oki Electric Ind Co Ltd | Liquid crystal display device |
-
1989
- 1989-12-26 JP JP1989149932U patent/JPH0733301Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0388223U (en) | 1991-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |