JPS6246075B2 - - Google Patents
Info
- Publication number
- JPS6246075B2 JPS6246075B2 JP56211729A JP21172981A JPS6246075B2 JP S6246075 B2 JPS6246075 B2 JP S6246075B2 JP 56211729 A JP56211729 A JP 56211729A JP 21172981 A JP21172981 A JP 21172981A JP S6246075 B2 JPS6246075 B2 JP S6246075B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- silicon dioxide
- sputtering
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000012300 argon atmosphere Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 30
- 238000002834 transmittance Methods 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
本発明は、非晶質シリコン薄膜の光起電力装置
の改良及びその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in an amorphous silicon thin film photovoltaic device and a method for manufacturing the same.
透明絶縁基板上に非晶質シリコン薄膜を設けて
なる光起電力装置が知られている。この種の非晶
質シリコン光起電力装置は、第１図に概略的に示
すように、透明絶縁基板１上に光の透過度の良い
透明電極２を形成し、その上に非晶質シリコン薄
膜３を形成し、その上に金属電極４を形成させて
なる構造を持つている。このような光起電力装置
に用いられる透明電極は、一般に、その透過度と
抵抗が反比例関係にあり、透過度が良いと抵抗が
高く、透過度が悪いと抵抗が低い。また、このよ
うな光起電力装置の製造過程において透明電極を
大気中に放置すると抵抗値が変動するため、後続
の製造工程を直ちに行なわねばならない。したが
つて、光を電気に変換させる半導体に光を効率よ
く入射させて電気の取出しを多くさせるためには
装置の光透過度を上げ、透明電極の抵抗値を減少
させることが望まれる。 A photovoltaic device is known in which an amorphous silicon thin film is provided on a transparent insulating substrate. This type of amorphous silicon photovoltaic device, as schematically shown in FIG. It has a structure in which a thin film 3 is formed and a metal electrode 4 is formed thereon. Generally, the transmittance and resistance of a transparent electrode used in such a photovoltaic device are inversely proportional to each other; when the transmittance is good, the resistance is high, and when the transmittance is poor, the resistance is low. Furthermore, during the manufacturing process of such a photovoltaic device, if the transparent electrode is left in the atmosphere, the resistance value will fluctuate, so subsequent manufacturing steps must be performed immediately. Therefore, in order to efficiently make light incident on a semiconductor that converts light into electricity and to extract more electricity, it is desirable to increase the light transmittance of the device and reduce the resistance value of the transparent electrode.
したがつて、本発明の目的は、上述のような欠
点を除去し、より透過度が高く、且つ抵抗の低い
透明電極を形成させた光起電力装置の製造方法を
提供することである。本発明の他の目的は、この
ような改善された透明電極を有する光起電力装置
の製造工程を同一装置において連続的に実施する
ことを可能ならしめる方法を提供することであ
る。 Therefore, an object of the present invention is to provide a method for manufacturing a photovoltaic device that eliminates the above-mentioned drawbacks and forms a transparent electrode with higher transmittance and lower resistance. Another object of the present invention is to provide a method that allows the manufacturing steps of a photovoltaic device having such an improved transparent electrode to be carried out continuously in the same apparatus.
ここに、透明絶縁基板と透明電極との間に二酸
化けい素膜を形成するならば、透過度が向上する
と共に、抵抗の低い透明電極を形成でき、これに
より光を有効に発電装置に到達させ、電気の取出
しを向上させ得ることがわかつた。 If a silicon dioxide film is formed between the transparent insulating substrate and the transparent electrode, the transmittance will improve and a transparent electrode with low resistance can be formed, which will allow light to reach the power generation device effectively. It was found that the electricity extraction can be improved.
しかして、本発明によれば、透明絶縁基板上に
二酸化けい素膜を形成し、その二酸化けい素膜上
に透明電極を形成し、次いで非晶質シリコン膜を
形成した後、適当な金属電極を形成することから
なる非晶質シリコン光起電力装置の製造方法が提
供される。 According to the present invention, a silicon dioxide film is formed on a transparent insulating substrate, a transparent electrode is formed on the silicon dioxide film, an amorphous silicon film is formed, and then a suitable metal electrode is formed. A method of manufacturing an amorphous silicon photovoltaic device is provided, comprising forming an amorphous silicon photovoltaic device.
本発明の方法で用いることのできる透明絶縁基
板としては、この種の光起電力装置の製造に用い
られる各種の基板があげられる。例えば、透明セ
ラミツク系（例えば、コランダム、サフアイアな
どのアルミナ系、ジルコン系など）、LiO2、
Na2O、K2Oなどの酸化物を添加したソーダライ
ムガラス各種の透明ガラスなどを用いることがで
きる。 Examples of the transparent insulating substrate that can be used in the method of the present invention include various substrates used in manufacturing this type of photovoltaic device. For example, transparent ceramics (e.g. corundum, alumina such as sapphire, zircon, etc.), LiO 2 ,
Soda lime glass and various transparent glasses to which oxides such as Na 2 O and K 2 O are added can be used.
透明絶縁基板上への二酸化けい素膜の形成は、
気相形成法、スパツタリング法などによつて行な
われる。特に好ましい方法は、アルゴン雰囲気下
でのスパツタリング法である。二酸化けい素膜
は、好ましくは数百〜数千Åの厚さで形成され
る。 The formation of a silicon dioxide film on a transparent insulating substrate is
This is carried out by a vapor phase formation method, a sputtering method, or the like. A particularly preferred method is sputtering under an argon atmosphere. The silicon dioxide film is preferably formed with a thickness of several hundred to several thousand angstroms.
次いで、上記のように形成された二酸化けい素
膜上に透明電極が形成される。これは、好ましく
は透明な金属酸化物皮膜である。例えば、
SnO2、TiO2、Sbを含むSiO2、In2O3、SnO2−
In2O3、ZnSなどがあげられる。これらの皮膜
は、スパツタリング法、塗布法などにより形成さ
せることができる。特に好ましい方法は、アルゴ
ン雰囲気下でのスパツタリング法である。 Next, a transparent electrode is formed on the silicon dioxide film formed as described above. This is preferably a transparent metal oxide film. for example,
SnO 2 , TiO 2 , SiO 2 including Sb, In 2 O 3 , SnO 2 −
Examples include In 2 O 3 and ZnS. These films can be formed by a sputtering method, a coating method, or the like. A particularly preferred method is sputtering under an argon atmosphere.
次いで透明電極上に非晶質シリコン膜が形成さ
れる。これは、水素雰囲気下でのプラズマ気相成
長法、スパツタリング法などによつて形成され
る。非晶質シリコン膜の厚さは、一般に0.3〜2.0
μｍ好ましくは0.5〜１μｍである。 Next, an amorphous silicon film is formed on the transparent electrode. This is formed by plasma vapor deposition, sputtering, or the like in a hydrogen atmosphere. The thickness of amorphous silicon film is generally 0.3 to 2.0
μm Preferably 0.5 to 1 μm.
非晶質シリコン膜上への金属電極の形成は、周
知の方法、例えば電子ビーム蒸着法、スパツタリ
ング法などにより行なうことができる。用いられ
る金属は、好ましくは金、銀、Alなどである。 The metal electrode can be formed on the amorphous silicon film by a well-known method such as electron beam evaporation or sputtering. The metal used is preferably gold, silver, Al, etc.
以下、本発明の好ましい具体例を第２図を参照
しながら説明する。 Hereinafter, a preferred embodiment of the present invention will be explained with reference to FIG.
スパツタリング装置に透明絶縁基板１を装入
し、アルゴン雰囲気下にまず二酸化けい素膜５を
スパツタリングにより成長させる。厚さは数百〜
数千Åの間であるようにする。次いで透明電極
（In2O3）２をアルゴン雰囲気下にスパツタリング
により成長させ、次に装置の雰囲気を水素に変え
てシリコンをスパツタリングすることにより、非
晶質シリコン膜３を形成させる。次いで、そのよ
うにして形成された組立体を取り出し、金属電極
（金）４を蒸着法により形成させ、光起電力装置
が製造される。以上のように、同一装置で連続製
造を行なえば、汚染が少なく、清浄な操作ができ
る。 A transparent insulating substrate 1 is placed in a sputtering apparatus, and a silicon dioxide film 5 is first grown by sputtering in an argon atmosphere. Thickness is several hundred ~
between several thousand Å. Next, a transparent electrode (In 2 O 3 ) 2 is grown by sputtering in an argon atmosphere, and then the atmosphere of the apparatus is changed to hydrogen and silicon is sputtered to form an amorphous silicon film 3. Next, the assembly thus formed is taken out, and a metal electrode (gold) 4 is formed by vapor deposition to produce a photovoltaic device. As described above, if continuous production is performed using the same equipment, there will be less contamination and clean operation will be possible.
本発明の方法に従つて、透明絶縁基板と透明電
極との間に二酸化けい素膜を形成させることによ
り、透明電極の抵抗は約50％減少させることがで
き、さらに二層構造により透過度も相当に向上し
た。 By forming a silicon dioxide film between the transparent insulating substrate and the transparent electrode according to the method of the present invention, the resistance of the transparent electrode can be reduced by about 50%, and the two-layer structure can also reduce the transmittance. It has improved considerably.
この理由は次のとおりである。 The reason for this is as follows.
１ 低抵抗化
非晶質シリコン薄膜の光起電力装置の透明絶
縁基板として、一般にLiO2、Na2O、K2Oなど
の酸化物を添加したソーダライムガラスなどが
使用される。1. Lower resistance Soda lime glass or the like to which oxides such as LiO 2 , Na 2 O, and K 2 O are added is generally used as a transparent insulating substrate for photovoltaic devices using amorphous silicon thin films.
この基板上にIn2O3、SnO2などの酸化物半導
体による透明電極を形成するが、加熱状態での
膜形成のため基板より特に原子サイズが小さ
く、一価で移動が活発なアルカリイオンが透明
電極中に入り込み膜質を著しく悪化させ、抵抗
値の低下（伝導度の向上）を阻害する。この現
象の改善方法として間に二酸化けい素膜をバリ
ア膜として設定させると有効で、厚みとしては
250〜1500Åが適正である。 A transparent electrode made of an oxide semiconductor such as In 2 O 3 or SnO 2 is formed on this substrate, but since the film is formed in a heated state, alkali ions, which are monovalent and actively mobile, have a smaller atomic size than the substrate. It penetrates into the transparent electrode and significantly deteriorates the film quality, inhibiting the reduction in resistance value (improvement in conductivity). As a method to improve this phenomenon, it is effective to set a silicon dioxide film in between as a barrier film, and the thickness is
250 to 1500 Å is appropriate.
２ 透過度の向上
スパツタリング方法による透明導電膜は酸素
の供給量が少なく、例えばIn2O3膜形成の場合
In2O3-xの形で透過度の悪い黒つぽい膜とな
る。これを次に大気雰囲気で焼成を行い膜の酸
化を進めることにより透過度を向上させてい
る。2 Improved transparency Transparent conductive films produced by sputtering require a small amount of oxygen supply, for example when forming an In 2 O 3 film.
In the form of In 2 O 3-x , it forms a dark film with poor transparency. This is then fired in an air atmosphere to promote oxidation of the film and improve its transmittance.
本発明では、同じスパツタリングにより形成
した下地側、二酸化けい素膜の酸素が順次
In2O3膜形成時に膜中に取り込まれ酸素供給量
を増加させ膜質良好なIn2O3膜となり約10％の
透過度向上となる。 In the present invention, the oxygen in the silicon dioxide film on the base side formed by the same sputtering process is
When the In 2 O 3 film is formed, it is incorporated into the film and increases the amount of oxygen supplied, resulting in an In 2 O 3 film with good film quality and an approximately 10% improvement in permeability.
本発明は主として光起電力装置に関連させて説
明したが、本発明の方法は表示素子の電極形成法
にも応用できる。 Although the present invention has been described primarily in relation to a photovoltaic device, the method of the present invention can also be applied to a method of forming electrodes for display elements.
第１図は、従来技術に従う光起電力装置の断面
図である。第２図は、本発明の方法により製造さ
れる光起電力装置の断面図である。
ここで、１は透明絶縁基板、２は透明電極、３
は非晶質シリコン膜、４は金属電極、５は二酸化
けい素膜。
FIG. 1 is a cross-sectional view of a photovoltaic device according to the prior art. FIG. 2 is a cross-sectional view of a photovoltaic device manufactured by the method of the present invention. Here, 1 is a transparent insulating substrate, 2 is a transparent electrode, and 3
4 is an amorphous silicon film, 4 is a metal electrode, and 5 is a silicon dioxide film.
Claims (1)
その二酸化けい素膜上に透明電極を形成し、次い
で非晶質シリコン膜を形成した後、適当な金属電
極を形成することからなる非晶質シリコン光起電
力装置の製造方法。 ２ 特許請求の範囲第１項記載の製造方法におい
て、二酸化けい素膜がアルゴン雰囲気下にスパツ
タリング法によつて形成されることを特徴とする
製造方法。 ３ 特許請求の範囲第１又は２項記載の製造方法
において、二酸化けい素膜が数百〜数千オングス
トロームの厚さで形成されることを特徴とする製
造方法。 ４ 特許請求の範囲第１項記載の製造方法におい
て、透明絶縁基板上に二酸化けい素膜をアルゴン
雰囲気下にスパツタリング法で形成する工程、次
いで透明電極をアルゴン雰囲気下にスパツタリン
グ法で形成する工程、次いで水素雰囲気に変えて
シリコンのスパツタリングにより非晶質シリコン
膜を形成する工程を同一の装置において連続的に
実施することを特徴とする製造方法。[Claims] 1. Forming a silicon dioxide film on a transparent insulating substrate,
A method for manufacturing an amorphous silicon photovoltaic device comprising forming a transparent electrode on the silicon dioxide film, then forming an amorphous silicon film, and then forming a suitable metal electrode. 2. The manufacturing method according to claim 1, wherein the silicon dioxide film is formed by sputtering in an argon atmosphere. 3. The manufacturing method according to claim 1 or 2, wherein the silicon dioxide film is formed with a thickness of several hundred to several thousand angstroms. 4. In the manufacturing method according to claim 1, a step of forming a silicon dioxide film on a transparent insulating substrate by a sputtering method in an argon atmosphere, and then a step of forming a transparent electrode by a sputtering method in an argon atmosphere, A manufacturing method characterized in that the step of forming an amorphous silicon film by sputtering silicon in a hydrogen atmosphere is then performed continuously in the same apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56211729A JPS58112375A (en) | 1981-12-25 | 1981-12-25 | Manufacture of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56211729A JPS58112375A (en) | 1981-12-25 | 1981-12-25 | Manufacture of photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58112375A JPS58112375A (en) | 1983-07-04 |
| JPS6246075B2 true JPS6246075B2 (en) | 1987-09-30 |
Family
ID=16610628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56211729A Granted JPS58112375A (en) | 1981-12-25 | 1981-12-25 | Manufacture of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58112375A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60147175A (en) * | 1984-01-12 | 1985-08-03 | Canon Inc | Photosensor |
| JPS60147174A (en) * | 1984-01-12 | 1985-08-03 | Canon Inc | Photosensor |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5189513A (en) * | 1975-02-04 | 1976-08-05 | NETSUSEN HANSHAGARASU | |
| JPS5189515A (en) * | 1975-02-04 | 1976-08-05 | ||
| JPS51150510A (en) * | 1975-06-20 | 1976-12-24 | Asahi Glass Co Ltd | Novel glass plate which reflects heat rays |
| JPS5346697A (en) * | 1976-10-12 | 1978-04-26 | Seiko Epson Corp | Transparent conductive film |
| JPS5369057A (en) * | 1976-11-30 | 1978-06-20 | Seiko Epson Corp | Coating agent for display electrodes |
| JPS5461696A (en) * | 1977-10-26 | 1979-05-18 | Teijin Ltd | Transparent conductive laminated body |
| JPS5499449A (en) * | 1978-01-23 | 1979-08-06 | Hitachi Ltd | Roduction of liquid crystal display element |
| JPS54127424A (en) * | 1978-03-08 | 1979-10-03 | Gordon Roy Gerald | Improved deposition method |
| JPS54143646A (en) * | 1978-04-28 | 1979-11-09 | Nec Corp | Photosensitive plate for electrophotography |
| JPS55107276A (en) * | 1979-02-09 | 1980-08-16 | Sanyo Electric Co Ltd | Photoelectromotive force device |
| JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
| JPS55121685A (en) * | 1979-03-12 | 1980-09-18 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| JPS5636626A (en) * | 1979-09-03 | 1981-04-09 | Canon Inc | Display cell |
| JPS5665973A (en) * | 1979-11-02 | 1981-06-04 | Komatsu Ltd | Vapor depositing method |
| JPS6246074A (en) * | 1984-11-05 | 1987-02-27 | Nagano Keiki Seisakusho:Kk | Operating mechanism for air pilot valve |
-
1981
- 1981-12-25 JP JP56211729A patent/JPS58112375A/en active Granted
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5189513A (en) * | 1975-02-04 | 1976-08-05 | NETSUSEN HANSHAGARASU | |
| JPS5189515A (en) * | 1975-02-04 | 1976-08-05 | ||
| JPS51150510A (en) * | 1975-06-20 | 1976-12-24 | Asahi Glass Co Ltd | Novel glass plate which reflects heat rays |
| JPS5346697A (en) * | 1976-10-12 | 1978-04-26 | Seiko Epson Corp | Transparent conductive film |
| JPS5369057A (en) * | 1976-11-30 | 1978-06-20 | Seiko Epson Corp | Coating agent for display electrodes |
| JPS5461696A (en) * | 1977-10-26 | 1979-05-18 | Teijin Ltd | Transparent conductive laminated body |
| JPS5499449A (en) * | 1978-01-23 | 1979-08-06 | Hitachi Ltd | Roduction of liquid crystal display element |
| JPS54127424A (en) * | 1978-03-08 | 1979-10-03 | Gordon Roy Gerald | Improved deposition method |
| JPS54143646A (en) * | 1978-04-28 | 1979-11-09 | Nec Corp | Photosensitive plate for electrophotography |
| JPS55107276A (en) * | 1979-02-09 | 1980-08-16 | Sanyo Electric Co Ltd | Photoelectromotive force device |
| JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
| JPS55121685A (en) * | 1979-03-12 | 1980-09-18 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| JPS5636626A (en) * | 1979-09-03 | 1981-04-09 | Canon Inc | Display cell |
| JPS5665973A (en) * | 1979-11-02 | 1981-06-04 | Komatsu Ltd | Vapor depositing method |
| JPS6246074A (en) * | 1984-11-05 | 1987-02-27 | Nagano Keiki Seisakusho:Kk | Operating mechanism for air pilot valve |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58112375A (en) | 1983-07-04 |
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