JPS5789265A - Photo electromotive element - Google Patents

Photo electromotive element

Info

Publication number
JPS5789265A
JPS5789265A JP55165303A JP16530380A JPS5789265A JP S5789265 A JPS5789265 A JP S5789265A JP 55165303 A JP55165303 A JP 55165303A JP 16530380 A JP16530380 A JP 16530380A JP S5789265 A JPS5789265 A JP S5789265A
Authority
JP
Japan
Prior art keywords
doped
oxide semiconductor
ohmic contact
type
electromotive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55165303A
Other languages
Japanese (ja)
Inventor
Toshio Adachi
Tatsumi Arakawa
Masaru Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Priority to JP55165303A priority Critical patent/JPS5789265A/en
Publication of JPS5789265A publication Critical patent/JPS5789265A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a photo electromotive element with a high open terminal voltage and high short circuit current by providing an oxide semiconductor layer, amorphous hydro silicon layer and an ohmic contact layer on a transparent conductive film. CONSTITUTION:An transparent electrode film 8 of In2O2+xSnO2 (x=0.03) is formed on a transparent glass substrate 7 by a sputter method. Then a oxide semiconductor film of Ti O29 100Angstrom thick, of a p type a-Si:H of 50Angstrom doped with 30% boron, an undoped a-Si:H11 of 1.0mum, an N type a-Si:H12 doped with 0.5% of phosphor of 300Angstrom are formed and aluminum 13 for an ohmic contact electrode is vaporised.
JP55165303A 1980-11-26 1980-11-26 Photo electromotive element Pending JPS5789265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55165303A JPS5789265A (en) 1980-11-26 1980-11-26 Photo electromotive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55165303A JPS5789265A (en) 1980-11-26 1980-11-26 Photo electromotive element

Publications (1)

Publication Number Publication Date
JPS5789265A true JPS5789265A (en) 1982-06-03

Family

ID=15809764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55165303A Pending JPS5789265A (en) 1980-11-26 1980-11-26 Photo electromotive element

Country Status (1)

Country Link
JP (1) JPS5789265A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196775A (en) * 1984-10-17 1986-05-15 Sanyo Electric Co Ltd Photovoltaic device
JPS61159771A (en) * 1985-01-07 1986-07-19 Sanyo Electric Co Ltd Photovoltaic device
JPS61202475A (en) * 1985-03-05 1986-09-08 Mitsubishi Electric Corp Solar battery array for space
JPS6324677A (en) * 1986-07-17 1988-02-02 Fuji Electric Co Ltd Solar cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196775A (en) * 1984-10-17 1986-05-15 Sanyo Electric Co Ltd Photovoltaic device
JPH0564472B2 (en) * 1984-10-17 1993-09-14 Sanyo Electric Co
JPS61159771A (en) * 1985-01-07 1986-07-19 Sanyo Electric Co Ltd Photovoltaic device
JPS61202475A (en) * 1985-03-05 1986-09-08 Mitsubishi Electric Corp Solar battery array for space
JPS6324677A (en) * 1986-07-17 1988-02-02 Fuji Electric Co Ltd Solar cell

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