JPH02111080A - Amorphous thin-film solar cell - Google Patents
Amorphous thin-film solar cellInfo
- Publication number
- JPH02111080A JPH02111080A JP63264423A JP26442388A JPH02111080A JP H02111080 A JPH02111080 A JP H02111080A JP 63264423 A JP63264423 A JP 63264423A JP 26442388 A JP26442388 A JP 26442388A JP H02111080 A JPH02111080 A JP H02111080A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- transparent electrode
- metal
- solar cell
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 10
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052738 indium Inorganic materials 0.000 abstract description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、非晶質薄膜太陽電池に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an amorphous thin film solar cell.
［従来の技術］
従来のグロー放電プラズマを用いて形成される非晶質シ
リコン（アモルファスシリコン）太陽電池は、通常第３
図に示す構造になっている。すなわち図中８はガラスか
らなる基板であり、この基板８上には透明電極９が成膜
されている。この透明電極９はＩＴＯ（インジウムＩｎ
と錫Ｓｎの混合酸化物）あるいは酸化錫５ｎ０２などで
構成され、スパッタリングや熱ＣＶ Ｄ （ＣＶＤ−ｃ
ｈｅａ＋１ｃａｌｖａｐｃｒ ｄｅｐｏｓｉｔｉｏｎ
、化学蒸着）などの方法で形成される。透明電極９の上
には、２層１０，１層１１．０層１２がそれぞれグロー
放電を用いたプラズマ ＣＶＤ法により形成される。１
層１１の形成には水素Ｈ２あるいは、アルゴンＡｒなど
で希釈したシランＳｉＨ４を用いる。２層１０，０層１
２の形成にはミランＳｉＨ４の他にドーピングガスとし
て、それぞれジボラン８２Ｈ，及びフォスフインＰＨ３
を用いる。２層１０，１層１１゜０層１２の膜厚は成膜
条件にも依るが一般的にはそれぞれ１００〜２００人、
５０００〜８０００人、４００〜５００人程度である。[Prior Art] Amorphous silicon solar cells formed using conventional glow discharge plasma typically have a
It has the structure shown in the figure. That is, 8 in the figure is a substrate made of glass, and a transparent electrode 9 is formed on this substrate 8. This transparent electrode 9 is made of ITO (Indium In
mixed oxide of tin and Sn) or tin oxide 5n02, etc., and can be sputtered or thermally CVD-c
hea+1calvapcr deposition
, chemical vapor deposition). On the transparent electrode 9, two layers 10, one layer 11.0 layers 12 are formed by a plasma CVD method using glow discharge. 1
To form the layer 11, hydrogen H2 or silane SiH4 diluted with argon or the like is used. 2 layers 10, 0 layers 1
In addition to Milan SiH4, diborane 82H and phosphine PH3 were used as doping gases to form 2.
Use. The thickness of the 2nd layer 10, 1st layer 11°0 layer 12 depends on the film forming conditions, but generally 100 to 200 people are required for each.
5,000 to 8,000 people, about 400 to 500 people.
０層１２の上にはアルミニウムＡ、１？からなる金属電
極１３が真空蒸首法あるいはスクリーン印刷法などによ
り形成される。On top of the 0 layer 12 are aluminum A, 1? A metal electrode 13 is formed by a vacuum vaporization method, a screen printing method, or the like.
［発明が解決しようとする課題］
従来の技術による非晶質薄膜太陽電池では下記の問題点
がある。[Problems to be Solved by the Invention] Conventional amorphous thin film solar cells have the following problems.
（１）２層１０，１層１１．１層１２を形成する際透明
電極を成膜した基板は、水素プラズマに接触する。透明
電極９はＩＴＯ，酸化錫などの酸化物で構成されている
ため、水素プラズマ中では、活性な水素ラジカルにより
還元され、インジウムＩｎあるいは錫が形成される。こ
のインジウムまたは錫は、Ｐ層あるいはｉ層に拡散し不
純物となるため太陽電池の特性が劣化する。(1) When forming the second layer 10 and the first layer 11.1 layer 12, the substrate on which the transparent electrode was formed is brought into contact with hydrogen plasma. Since the transparent electrode 9 is made of an oxide such as ITO or tin oxide, it is reduced by active hydrogen radicals in hydrogen plasma to form indium In or tin. This indium or tin diffuses into the P layer or the i layer and becomes an impurity, thereby deteriorating the characteristics of the solar cell.
（２）１層１１で発生したキャリア（電子及び正孔）を
電流として効率的に外部回路に取り出すためには透明電
極９と２層１０の界面はオーミック接合であることが望
ましい。しかし実際の界面は第４図に示すようにショッ
トキー接合が形成されていることが指摘されている。こ
の場合、正孔の一部は透明電極７２層の界面で消滅する
ため、外部回路に流れる電流は減少する。(2) In order to efficiently extract carriers (electrons and holes) generated in the first layer 11 as a current to an external circuit, it is desirable that the interface between the transparent electrode 9 and the second layer 10 be in an ohmic contact. However, it has been pointed out that the actual interface forms a Schottky junction as shown in FIG. In this case, some of the holes disappear at the interface of the transparent electrode 72 layer, so the current flowing to the external circuit decreases.
本発明は上記の問題点を解決するためになされたもので
あり透明電極の還元を抑えかつ良好な透明型１＋／Ｐ層
の界面特性を有する非晶質薄膜太陽電池を提供すること
を目的とする。The present invention was made in order to solve the above problems, and an object thereof is to provide an amorphous thin film solar cell that suppresses reduction of the transparent electrode and has good interface characteristics of the transparent 1+/P layer. do.
［課題を解決するための手段］
本発明に係る非晶質薄膜太陽電池はグロー放電プラズマ
を用いて製作する非晶質太陽電池において、ガラス基板
と透明電極とＰ層とｉ層とｎ層と金属電極を具備すると
ともに、該透明電極と非晶質層との間に薄膜の金属層又
は金属珪化物層を挿入することを特徴とする。[Means for Solving the Problems] An amorphous thin film solar cell according to the present invention is an amorphous solar cell manufactured using glow discharge plasma, and includes a glass substrate, a transparent electrode, a P layer, an i layer, and an n layer. It is characterized in that it includes a metal electrode and a thin metal layer or metal silicide layer is inserted between the transparent electrode and the amorphous layer.
［作 用］
透明電極上に、ごく薄い金属層を形成した後、順次、Ｐ
層、ｉ層、ｎ層を形成するため、透明電極が直接水素プ
ラズマに接触しない。したがって透明電極の還元が抑制
され、インジウム、錫などの金属不純物の拡散混入が少
なくなる。[Function] After forming a very thin metal layer on the transparent electrode, P
The transparent electrode does not come into direct contact with hydrogen plasma to form the I-layer and N-layer. Therefore, reduction of the transparent electrode is suppressed, and diffusion and mixing of metal impurities such as indium and tin is reduced.
また、透明電極とＰ層の間に形成する金属として仕事関
数が大きく、かつ電気抵抗の小さい金属を用いることに
より第４図に示したショットキー障壁の高さが低くなり
、透明電極７２層の界面の電気的特性が改善される。Furthermore, by using a metal with a large work function and low electrical resistance as the metal formed between the transparent electrode and the P layer, the height of the Schottky barrier shown in FIG. The electrical properties of the interface are improved.
以上の作用により、本発明の非晶質薄膜太陽電池は、従
来の非晶質薄膜太陽電池に比べ特性が向上する。Due to the above effects, the amorphous thin film solar cell of the present invention has improved characteristics compared to conventional amorphous thin film solar cells.
［実施例］ 本発明の実施例を第１図〜第２図に示す。[Example] Embodiments of the present invention are shown in FIGS. 1 and 2.
第１図に於て透明電極２にはＩ Ｔ Ｏ１８００人の上
に、酸化錫５ｎ０２２００人を成膜したものを用いる。In FIG. 1, the transparent electrode 2 is made by forming a film of 502,200 tin oxide on 1,800 ITO.
透明型極付のガラス基板１は、金属層３を形成する前に
何機溶媒（トリクロエチレン及びアセトン）中で超音波
洗浄を施す。The transparent electrode-equipped glass substrate 1 is subjected to ultrasonic cleaning in a solvent (trichlorethylene and acetone) before the metal layer 3 is formed.
金属層３には白金ｐｔを用いる。金属層３は光が入射す
る側に形成するため、膜厚が厚すぎると１層５に到達す
る光量が減少し、素子特性の劣化をもたらす。第２図は
ガラス上に形成した白金ｐｔ薄膜の光透過スペクトルの
膜厚依存性の測定結果を示す。第２図に示す太陽光スペ
クトルのピーク波長（５００〜５５０ｎｍ）における光
透過率から判断すると、白金ｐｔの膜厚は、１ｏÅ以下
が適当である。Platinum PT is used for the metal layer 3. Since the metal layer 3 is formed on the side where light enters, if the film thickness is too thick, the amount of light reaching one layer 5 will decrease, resulting in deterioration of device characteristics. FIG. 2 shows the measurement results of the film thickness dependence of the light transmission spectrum of a platinum PT thin film formed on glass. Judging from the light transmittance at the peak wavelength (500 to 550 nm) of the sunlight spectrum shown in FIG. 2, the appropriate thickness of the platinum PT film is 10 Å or less.
そこで、電子ビーム蒸着法により、透明電極２上に金属
層３として白金ｐｔを１ｏ人成膜する。Therefore, one layer of platinum PT is formed as a metal layer 3 on the transparent electrode 2 by electron beam evaporation.
次に平行平板型プラズマＣＶＤ装置により、２層４，１
層５．ｎ層６を形成する。各層の成膜条件の一例を、下
表に示す。Next, two layers 4, 1
Layer 5. An n-layer 6 is formed. An example of film forming conditions for each layer is shown in the table below.
２層４をアモルファスシリコンカーバイトするためにＳ
ｉ Ｈ４／Ｈ２、Ｂ２ Ｈ６／Ｈ２の他に、ＣＨ４／
Ｈ２を流す。２層４．ｉ層５． ｎ層６の膜厚は、それ
ぞれ１５０人、 ５０００人、４００人とする。S to make the second layer 4 amorphous silicon carbide
i H4/H2, B2 In addition to H6/H2, CH4/
Flow H2. 2 layers 4. i-layer 5. The thickness of the n-layer 6 is 150, 5000, and 400, respectively.
最後に金属電極７として電子ビーム蒸着法によりアルミ
ニウムＡ、１？を５０００人形成する。Finally, as the metal electrode 7, aluminum A, 1? 5,000 people.
製作した素子について、ソーラーシミュレータ（照射強
度１００ｎｌｌ−α−２）を用いて、素子特性を７１１
１定したところ、金属層３を挿入していない従来の構成
の素子に比べ短絡電流が８〜１０％増大した。The device characteristics of the manufactured device were evaluated using a solar simulator (irradiation intensity 100nll-α-2).
1, the short-circuit current increased by 8 to 10% compared to an element with a conventional structure in which the metal layer 3 was not inserted.
［発明の効果］
本発明は前述のように構成されているので、本発明によ
れば、水素プラズマによる透明電極の還元を抑制すると
ともに、透明電極とＰ層の界面の電気的特性を改善する
ため非晶質薄膜太陽電池の特性が向上する。[Effects of the Invention] Since the present invention is configured as described above, according to the present invention, the reduction of the transparent electrode by hydrogen plasma is suppressed, and the electrical characteristics of the interface between the transparent electrode and the P layer are improved. Therefore, the characteristics of amorphous thin film solar cells are improved.
なお透明電極とＰ層の間に形成する層としては、実施例
にて説明した白金ｐｔの他にパラジウムｐｄ、ニッケル
Ｎｉ１コバルトＣｏ及びこれらの金属の珪化物でも同様
な効果がある。As for the layer formed between the transparent electrode and the P layer, in addition to platinum PT described in the embodiment, palladium PD, nickel Ni1 cobalt Co, and silicides of these metals can also have similar effects.
第１図は、本発明の非晶質薄膜太陽電池の構成図を示す
図。第２図は、本発明のガラス基板上に成膜した白金ｐ
ｔ薄膜の光透過スペクトルを示す図。第３図は従来の技
術による非晶質薄膜太陽電池の構成を示す図、第４図は
透明電極（Ｓｎ０２）とＰ層の界面のバンド図を示す。
１・・・ガラス基板、２・・・透明電極、３・・・金属
層、４・・Ｐ層、５・・・ｉ層、６・・・ｎ層、７・・
・金属電極、８・・・ガラス基板、９・・・透明電極、
１０・・・Ｐ層、１１・・・ｉ層、１２・・・ｎ層、１
３・・・金属電極。
出願人代理人 弁理士 鈴 江 武 彦第
図FIG. 1 is a diagram showing a configuration diagram of an amorphous thin film solar cell of the present invention. Figure 2 shows the platinum p film formed on the glass substrate of the present invention.
A diagram showing a light transmission spectrum of a thin film. FIG. 3 is a diagram showing the structure of a conventional amorphous thin film solar cell, and FIG. 4 is a band diagram at the interface between the transparent electrode (Sn02) and the P layer. DESCRIPTION OF SYMBOLS 1...Glass substrate, 2...Transparent electrode, 3...Metal layer, 4...P layer, 5...i layer, 6...n layer, 7...
・Metal electrode, 8...Glass substrate, 9...Transparent electrode,
10...P layer, 11...i layer, 12...n layer, 1
3...Metal electrode. Applicant's Representative Patent Attorney Takehiko Suzue
Claims (1)
おいて、ガラス基板と透明電極とＰ層とｉ層とｎ層と金
属電極を具備するとともに、該透明電極と非晶質層との
間に薄膜の金属層又は金属珪化物層を挿入することを特
徴とする非晶質薄膜太陽電池。An amorphous solar cell manufactured using glow discharge plasma includes a glass substrate, a transparent electrode, a P layer, an i layer, an n layer, and a metal electrode, and a thin film is provided between the transparent electrode and the amorphous layer. An amorphous thin film solar cell characterized by inserting a metal layer or a metal silicide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63264423A JPH02111080A (en) | 1988-10-20 | 1988-10-20 | Amorphous thin-film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63264423A JPH02111080A (en) | 1988-10-20 | 1988-10-20 | Amorphous thin-film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02111080A true JPH02111080A (en) | 1990-04-24 |
Family
ID=17402972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63264423A Pending JPH02111080A (en) | 1988-10-20 | 1988-10-20 | Amorphous thin-film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02111080A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001291883A (en) * | 2000-04-05 | 2001-10-19 | Tdk Corp | Photovoltaic element and its manufacturing method |
| JP2001291878A (en) * | 2000-04-05 | 2001-10-19 | Tdk Corp | Photovoltaic element and its manufacturing method |
| KR100324121B1 (en) * | 1998-02-25 | 2002-02-20 | 요코다 마코도 | Socket for electric parts |
| WO2003061018A1 (en) * | 2002-01-10 | 2003-07-24 | Tdk Corporation | Photovoltaic device |
| JP2005150723A (en) * | 2003-11-12 | 2005-06-09 | Samsung Electronics Co Ltd | Photodiode and manufacturing method of same |
| JP2011211086A (en) * | 2010-03-30 | 2011-10-20 | Lintec Corp | Organic thin film solar cell element |
| JP2013251582A (en) * | 2013-09-17 | 2013-12-12 | Tohoku Univ | Electronic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59119874A (en) * | 1982-12-27 | 1984-07-11 | Hoya Corp | Solar cell |
| JPS6196775A (en) * | 1984-10-17 | 1986-05-15 | Sanyo Electric Co Ltd | Photovoltaic device |
-
1988
- 1988-10-20 JP JP63264423A patent/JPH02111080A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59119874A (en) * | 1982-12-27 | 1984-07-11 | Hoya Corp | Solar cell |
| JPS6196775A (en) * | 1984-10-17 | 1986-05-15 | Sanyo Electric Co Ltd | Photovoltaic device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100324121B1 (en) * | 1998-02-25 | 2002-02-20 | 요코다 마코도 | Socket for electric parts |
| JP2001291883A (en) * | 2000-04-05 | 2001-10-19 | Tdk Corp | Photovoltaic element and its manufacturing method |
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