JPS59119874A - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JPS59119874A JPS59119874A JP57228917A JP22891782A JPS59119874A JP S59119874 A JPS59119874 A JP S59119874A JP 57228917 A JP57228917 A JP 57228917A JP 22891782 A JP22891782 A JP 22891782A JP S59119874 A JPS59119874 A JP S59119874A
- Authority
- JP
- Japan
- Prior art keywords
- type
- film
- layer
- transparent conductive
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 11
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 9
- 239000010955 niobium Substances 0.000 claims abstract description 9
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 9
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 8
- 239000010948 rhodium Substances 0.000 claims abstract description 8
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 49
- 239000011521 glass Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000003057 platinum Chemical class 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
本発明は、水素化アモルファスシリコン（以下ｒａ−８
ｉ：ＨＪという。）又は水素化アモルファスシリコンカ
ーバイト（以下「ａ−８ｉＣ：１−ＩＪという。）を用
いた太陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to hydrogenated amorphous silicon (hereinafter referred to as RA-8
i: My name is HJ. ) or hydrogenated amorphous silicon carbide (hereinafter referred to as "a-8iC:1-IJ").
従来、この太陽電池の代表例としては、第１図に示すよ
うにガラス等の透光性絶縁基板１上に、真空蒸着法、ス
パッタ法又はＣＶＤ法等により酸化インジリム等の透明
導電膜２と、グロー放電分解法によりｐ型ａ −ｓｉ
：Ｈｅ３．ｒ型ａ−３ｊ：１」層４及びｎ型ａ−３ｉ：
ｌ−１層５からなるアモルファスシリコン半導体層（以
下「ａ−３ｉ半導体層」という。）６と、真空蒸着法等
によりアルミニウム等の金属電極７とを積層している。Conventionally, as a typical example of this solar cell, as shown in FIG. 1, a transparent conductive film 2 such as indirim oxide is deposited on a transparent insulating substrate 1 made of glass or the like by vacuum evaporation, sputtering, CVD, etc. , p-type a-si by glow discharge decomposition method
:He3. R-type a-3j: 1'' layer 4 and n-type a-3i:
An amorphous silicon semiconductor layer (hereinafter referred to as "a-3i semiconductor layer") 6 consisting of an l-1 layer 5 and a metal electrode 7 made of aluminum or the like are laminated by a vacuum evaporation method or the like.
そして、光８は、透光性絶縁基板１の側から入射し、主
としてｉ型ａ−８ｉ層４内で吸収されて透明導電ＰＩＡ
２と金属電極７との間で起電力を発生させる。The light 8 enters from the side of the transparent insulating substrate 1 and is mainly absorbed within the i-type a-8i layer 4 to form a transparent conductive PIA.
An electromotive force is generated between the metal electrode 2 and the metal electrode 7.
このような太陽電池の変換効率と、ａ−８ｉ半導体層６
の作成条件については多くの研究がなされているが、透
明導電膜２とａ−３ｉ：ｌ−１層３との界面については
未だ解明されておらず、現状では変換効率を向上させる
にも限界を来たしており、またそのバラツキが大きい欠
点があった。The conversion efficiency of such a solar cell and the a-8i semiconductor layer 6
Although much research has been conducted on the conditions for forming the transparent conductive film 2 and the a-3i:l-1 layer 3, the interface between the transparent conductive film 2 and the a-3i:l-1 layer 3 has not yet been elucidated, and there are currently limits to improving the conversion efficiency. There was also a drawback that there was a large variation in the results.
本発明の目的は、上記した欠点を除去し、変換効率を向
上させ、かつそのバラツキの少ない太陽電池を提供する
ことである。An object of the present invention is to eliminate the above-mentioned drawbacks, improve conversion efficiency, and provide a solar cell with less variation.
このような目的を達成させるために、本発明は、（１）
透光性絶縁基板上に、透明導電膜と、ｐ型。In order to achieve such an objective, the present invention provides (1)
A transparent conductive film and a p-type film are formed on a transparent insulating substrate.
ｉ型及びｎ型の各層がａ−３ｉ：ｌ−（であり又はｐ型
及びｎ型のうちいずれか少なくとも一方の層がａ−３ｉ
Ｃ：Ｈであってｉ型の層がａ−８ｉ：ｌ−１であるａ−
３ｉ半導体層とを具備しに太陽電池において、前記透明
導電膜と前記ａ−３ｉ：ｌ−１又はａ−３ｉＣ：Ｈとの
間に白金、ニオブ、パラジウム及びロジウムのうち少な
くとも１種を主体とする膜を介在していることを特徴と
する太陽電池、並びに〈２〉遮光性導電基板上に、ｐ型
、ｉ型及び１１型の各層がａ−８１：Ｈ又はｐ型及びｎ
型のうちいずれか少なくとも一方の層がａ−３ｉ（：：
Ｈであってｉ型の層がａ−３ｉニド１からなるａ −８
ｉ半導体層と、透明導電膜とを具備した太陽電池におい
て、前記遮光性導電基板と前記ａ−３ｉ：Ｈ又はａ−８
ｉＣ：Ｈとの間、あるいは前記ａ−８ｉ：Ｈ又はａ−３
ｉＣ：ｌ−１と前記透明導電膜との間に白金、ニオブ、
パラジウム及びロジウムのうち少なくとも１種を主体と
する膜を介在していることを特徴とする太陽電池である
。Each of the i-type and n-type layers is a-3i:l-(or at least one of the p-type and n-type layers is a-3i
a- where C:H and the i-type layer is a-8i:l-1
3i semiconductor layer, wherein at least one of platinum, niobium, palladium, and rhodium is mainly present between the transparent conductive film and the a-3i:l-1 or a-3iC:H. <2> A solar cell characterized in that each of p-type, i-type and 11-type layers has a-81:H or p-type and n
At least one layer of the mold is a-3i (::
a-8 which is H and has an i-type layer consisting of a-3i nide 1
i A solar cell comprising a semiconductor layer and a transparent conductive film, wherein the light-shielding conductive substrate and the a-3i:H or a-8
between iC:H or a-8i:H or a-3
Platinum, niobium,
This solar cell is characterized by having a film mainly composed of at least one of palladium and rhodium interposed therebetween.
ここで゛、「透光性絶縁基板」は、ガラス、フィルムな
ど透光性絶縁材料からなる基板である。Here, the "transparent insulating substrate" is a substrate made of a transparent insulating material such as glass or film.
「透明導電膜」は、酸化インジウム又は酸化スズを主成
分とする膜、あるいはこれらの多層膜からなる。「白金
、ニオブ、パラジウム及びロジウムのうち少なくとも１
種を主体とする膜Ｊは、白金等を真空蒸着法、スパッタ
法又はイオンブレーティング法等の成膜法により成膜し
たものであるが、その質量膜厚く単位面偵当りの膜質量
をその膜（白金）の比重（２１（＋ ／ＣＣ）で割った
ものをいう。The "transparent conductive film" is a film whose main component is indium oxide or tin oxide, or a multilayer film thereof. "At least one of platinum, niobium, palladium and rhodium
The seed-based film J is formed by depositing platinum or the like by a film forming method such as a vacuum evaporation method, a sputtering method, or an ion blating method. It is divided by the specific gravity of the membrane (platinum) (21(+/CC)).
）については、本発明の変換効率を考慮して好しくは１
〜３０人であって、このような薄い膜の場合には島状の
ような不連続膜になっていると考えられる。「遮光性導
電基板」は、ステンレス等の金属性基板又はガラスもし
くは有機樹脂等の基板上にステンレス、クロム等の金属
膜をｆｆ１ｌｉたちのである。) is preferably 1 in consideration of the conversion efficiency of the present invention.
~30 people, and in the case of such a thin film, it is considered to be a discontinuous film like an island. A "light-shielding conductive substrate" is a metal film made of stainless steel, chromium, etc. on a metallic substrate such as stainless steel, or a substrate made of glass or organic resin.
以下、本発明を実施例をもって詳細に説明する。Hereinafter, the present invention will be explained in detail using examples.
第２図は、透光性絶縁基板を用いた太陽電池における本
発明の一実施例を示し、第１図と同一構成部分は同一記
号を付している（以下同様）。FIG. 2 shows an embodiment of the present invention in a solar cell using a transparent insulating substrate, and the same components as in FIG. 1 are given the same symbols (the same applies hereinafter).
１０はソーダライムガラスから成形されたガラス基板で
あり、このガラス基板１０上にスズを不純物として含ん
だ酸化インジウム（以下ｒｌＴＯＪという。）膜２０（
膜厚ニア００人、シート抵抗：約３０Ω／口）を真空蒸
着法により成膜し、このＩＴＯ膜２膜上０上金膜９（質
量膜厚：約１０Ａ）を真空蒸着により成膜する。この白
金膜９は非常に薄いものであるから、必ずしも連続膜に
ならず、島状構造のような不連続膜になっていると予想
される。10 is a glass substrate molded from soda lime glass, and on this glass substrate 10 is formed an indium oxide (rlTOJ) film 20 (hereinafter referred to as rlTOJ) containing tin as an impurity.
A film with a film thickness of about 0.00 mm, sheet resistance: about 30 Ω/mouth) is formed by vacuum evaporation, and a gold film 9 (mass film thickness: about 10 A) is formed on top of the ITO film 2 by vacuum evaporation. Since this platinum film 9 is very thin, it is not necessarily a continuous film, but is expected to be a discontinuous film such as an island structure.
この白金膜９による光の吸収は、波長５５０ｎｍの光に
対して約４％であった。次に、この白金膜９上にｐ型ａ
−３ｉＣ：ｌ−１層３０（膜厚：１００人）、ｉ型ａ−
３ｉニド１層４０（膜厚： ５０００人）及びｎ型ａ−
８１ニド１層５０からなるａ−３ｉ半導体層６０をグロ
ー放電分解法により成膜し、このａ−３ｉ半導体層６０
上に金属電極としてアルミニウム電極７０を真空蒸着法
により付着させて、太陽電池を製作した。なお、本発明
の効果を評価するために、比較例として、第２図に示し
た実施例中、ＩＴＯ膜２膜上０上金膜９を成膜せずに、
直接ａ−３ｉ半導体層６０を積層し、次いでアルミニウ
ム電極７０を付着した太陽電池を製作した。The absorption of light by this platinum film 9 was approximately 4% for light having a wavelength of 550 nm. Next, on this platinum film 9, a p-type a
-3iC: l-1 layer 30 (thickness: 100), i type a-
3i nide 1 layer 40 (film thickness: 5000 layers) and n type a-
An a-3i semiconductor layer 60 consisting of one layer 50 of 81 oxide was formed by glow discharge decomposition method, and this a-3i semiconductor layer 60
An aluminum electrode 70 was deposited thereon as a metal electrode by vacuum evaporation to produce a solar cell. In order to evaluate the effects of the present invention, as a comparative example, the gold film 9 was not deposited on the ITO film 2 in the example shown in FIG.
A solar cell was fabricated in which an a-3i semiconductor layer 60 was directly stacked and then an aluminum electrode 70 was attached.
このような実施例及び比較例による太陽電池の電流電圧
特性は、ＡＭＩ（エアマス１）に調整された光を照射し
たときの電流電圧特性を測定した結果、それぞれ第３図
の曲線１１及び１２で示される。The current-voltage characteristics of the solar cells according to the examples and comparative examples are as shown by curves 11 and 12 in Figure 3, respectively, as a result of measuring the current-voltage characteristics when AMI (air mass 1) is irradiated with adjusted light. shown.
また、下表に実施例及び比較例による太陽電池の緒特性
を示す。なお、同表の数値は比較例の個々の特性を雄準
にして規格化している。Further, the table below shows the characteristics of solar cells according to Examples and Comparative Examples. Note that the numerical values in the same table are standardized using the individual characteristics of the comparative example as a standard.
この表によれば、実施例の太陽電池は、比較例のものと
対比して変換効率を１５％も向上させていることがわか
る。また、この変換効率のバラツキについては、実施例
の太陽電池が比較例のものよりも少ないことが確認され
た。なお、実施例の太陽電池は短絡電流が減少している
。これは白金膜９の内部での光吸収及びその表面での光
反射により有効に利用される光（４）が減少したためと
予想される。しかし、この短絡電流の減少分よりも開放
端電圧、フィルファクタの各増加分の方が大きいために
、結果としては前述したとおり変換効率を増加させてい
る。開放端電圧及びフィルファクタが増加した理由は現
時点では定かでないが、白金膜９をＩＴＯ膜２０とｐ型
ａ−８ｉＣ：８層３０との間に介在させたことにより、
この白金７１１９が、グロー放電分解法によってｐ型ａ
−８ｉＣ：ｌ−１層３０を積層するときに発生する還元
性プラズマからＩＴＯ膜２０を保護し、抵抗性接触（オ
ーミックコンタクト）を改善したためであると予想され
る。According to this table, it can be seen that the solar cells of the examples have improved conversion efficiency by as much as 15% compared to those of the comparative examples. Furthermore, it was confirmed that the variation in conversion efficiency was smaller in the solar cells of the examples than in the comparative examples. In addition, the short circuit current of the solar cell of the example is reduced. This is expected to be due to a decrease in the amount of effectively utilized light (4) due to light absorption inside the platinum film 9 and light reflection on its surface. However, since the increases in open circuit voltage and fill factor are larger than the decrease in short circuit current, the conversion efficiency is increased as described above. The reason why the open circuit voltage and fill factor increased is not clear at present, but by interposing the platinum film 9 between the ITO film 20 and the p-type a-8iC:8 layer 30,
This platinum 7119 was decomposed into p-type a by glow discharge decomposition method.
-8iC: This is expected to be because the ITO film 20 was protected from the reducing plasma generated when laminating the l-1 layer 30 and the resistive contact (ohmic contact) was improved.
次に、遮光性導電基板を用いた太陽電池におレプる本発
明の実施例を第４図、第５図及び第６図に示す。これら
の実施例はいずれも、ステンレス等の金属基板、又はガ
ラスもしくは有機樹脂等の基板上にステンレス、クロム
等の金属膜を付着した遮光性導電基板が使用可能であり
、本例ではステンレス基板１３を使用し、またａ−８ｉ
半導体層６１上にＩＴＯ膜２０を積層している。そして
ａ −３ｉ半導体層６１は、ｐ型ａ−３ｉ：８層３１．
ｉ型ａ−３ｉ層４０及びｎ型ａ−３ｉ：）（層５０より
構成されている。本発明の特徴となる白金膜９は、第４
図にてステンレス基板１３とｐ型ａ−３ｉ：ｌ−（層３
１との間、第５図にてｎ型ａ −８！ ： ＨＦＪ５
０とＩＴＯ膜２０との間、並びに第６図にてステンレス
基板１３とｐ 型ａ −ｓ ｒ ： ＋−＋ｉ３１と
の間及びｎ型ａ−８ｉ：（−１層５０とＩＴＯ膜２０と
の間にそれぞれ介在されている。いずれの実施例も前実
施例と同様な効果を奏した。以上の実施例では、白金膜
９を介在させたが、これに代えて、ニオブ、パラジウム
膜及びＯジウム膜をそれぞれ介在したものについても白
金膜９と同様な効果を奏したので、本発明の特徴となる
介在物としては、白金、ニオブ、パラジウム及びロジウ
ムのうち少なくとも１種を主体とした膜であることにな
る。Next, FIGS. 4, 5, and 6 show examples of the present invention applied to a solar cell using a light-shielding conductive substrate. In all of these embodiments, it is possible to use a metal substrate such as stainless steel, or a light-shielding conductive substrate in which a metal film such as stainless steel or chromium is adhered to a substrate such as glass or organic resin. and a-8i
The ITO film 20 is laminated on the semiconductor layer 61. The a-3i semiconductor layer 61 is a p-type a-3i:8 layer 31.
It is composed of an i-type a-3i layer 40 and an n-type a-3i layer 50.The platinum film 9, which is a feature of the present invention, is
In the figure, stainless steel substrate 13 and p-type a-3i:l- (layer 3
1, n-type a -8 in Figure 5! : HFJ5
0 and the ITO film 20, and in FIG. Each of the examples had the same effect as the previous example. In the above examples, the platinum film 9 was interposed, but in place of this, niobium, palladium film and O Since the same effect as platinum film 9 was obtained with each intervening film of gold, the inclusions that are the feature of the present invention are films mainly composed of at least one of platinum, niobium, palladium, and rhodium. It turns out that there is.
本発明は以上の実施例のとおりであるが、その他には、
ａ−３ｉ半導体層６０についてｎ型ａ−８ｉ：８層５０
をｎ型ａ−３ｉＣ：ｌ−１層に変更し、ｐ型ａ−３ｉＣ
：８層３０とｎ型ａ−８ｉ：Ｈ層５゜（又はｎ型ａ−８
’＋ Ｃ：Ｈ層）を置換し、またａ−３ｉ半導体層６１
についてｐ型ａ −８ｉ ： ）ｌｊｉｉ５０とｆ１
型ａ−８ｉ：８層３１のうち一方又は双方をそれぞれｐ
型ａ−３ｉＣ：Ｈ層とｎ型ａ−８ｉＱＨ［１層に変更し
、Ｄ 型ａ −８ｉ ： ！−１８５０（又ハｐ 型
ａ−８ｉＣ：ｌ−１層）とｎ型ａ−３ｉ：）−１層３１
（又は１１型ａ−８ｉＣ：ｆ−１層）を置換してもよい
。なお、ａ−８ｉ ｃ：Ｈ層はａ−３ｉ：ｌ−１層と対
比してバンドギャップを大きくすることができ、短絡電
流及び開放端電圧を上界させる効果があり、変換効率が
高くなる利点をもっている。The present invention is as described in the above embodiments, but in addition,
Regarding the a-3i semiconductor layer 60, the n-type a-8i: 8 layer 50
is changed to n-type a-3iC:l-1 layer, and p-type a-3iC
: 8 layer 30 and n-type a-8i: H layer 5° (or n-type a-8
'+C:H layer) and also a-3i semiconductor layer 61
For p-type a-8i: ) ljii50 and f1
Type a-8i: one or both of the eight layers 31 are p
Type a-3iC: H layer and n-type a-8iQH [changed to one layer, D type a-8i: ! -1850 (also hap type a-8iC:l-1 layer) and n-type a-3i:)-1 layer 31
(or type 11 a-8iC: f-1 layer) may be replaced. Note that the a-8i c:H layer can have a larger bandgap compared to the a-3i:l-1 layer, has the effect of raising the short circuit current and open circuit voltage, and increases the conversion efficiency. It has advantages.
また、ＩＴＯ膜２ｏに代えて、酸化インジウム又は酸化
スス′を主成分とする透明導電膜、あるいはこれらの多
層膜構造の透明導電膜であってもよい。Further, instead of the ITO film 2o, a transparent conductive film containing indium oxide or soot oxide as a main component, or a transparent conductive film having a multilayer structure of these may be used.
白金膜９等の成膜法として真空蒸着法の伯に、スパッタ
リング法等を使用してもよい。As a method for forming the platinum film 9 and the like, a sputtering method or the like may be used instead of the vacuum evaporation method.
以上のとおり、本発明によれば、従来以上に太陽電池の
変換効率を向上させ、かつそのバラツキを少なくさせた
ことがら、その実用的価値は多大である。As described above, according to the present invention, the conversion efficiency of solar cells is improved more than ever, and the variation thereof is reduced, so that the present invention has great practical value.
第１図は従来の太陽電池を示す断面図、第２図は本発明
による実施例を示す断面図、第３図は前実施例による太
陽電池の電流電圧特性図、並びに第４図、第５図及び第
６図は本発明に他の実施例を示す断面図である。
１０・・・ガラス基板、１３・・・ステンレス基板、２
０−−− ＩＴＯ膜、３Ｏ−−−ｐ型ａ−３ｉＣ：Ｈ層
、３ｌ−−−ｐ型ａ−３ｉ：ｌ−１層、４Ｏ−−−ｉ型
ａ−３ｉ：ｌ−１１１，５Ｏ−−−ｎ型ａ−８ｉ：ｌ−
１層、６０．６１ ・・・ａ−８ｉ半導体層、７０・
・・アルミニウム電極、８・・・光、９・・・白金膜ｆ
ｆ７’ｒｔ−−FIG. 1 is a sectional view showing a conventional solar cell, FIG. 2 is a sectional view showing an embodiment according to the present invention, FIG. 3 is a current-voltage characteristic diagram of the solar cell according to the previous embodiment, and FIGS. 6 and 6 are cross-sectional views showing other embodiments of the present invention. 10...Glass substrate, 13...Stainless steel substrate, 2
0---ITO film, 3O---p type a-3iC:H layer, 3l---p type a-3i:l-1 layer, 4O---i type a-3i:l-111,5O ---n type a-8i: l-
1 layer, 60.61...a-8i semiconductor layer, 70.
...Aluminum electrode, 8...Light, 9...Platinum film f
f7'rt--
Claims (2)
型及び１）型の各層がａ−３ｉ：）−１であり又はｐ型
及び１）型のうちいずれか少なくとも一方の層がａ−ｓ
ｉｃ：ｈであってｉ型の層がａ−３ｉ：Ｈであるａ−３
ｉ半導体層とを具備した太陽電池において、前記透明導
電膜と前記ａ−３ｉ：ｌ−（又はａ−３ｉＣ：ｌ−１と
の間に白金、ニオブ、パラジウム及びロジウムのうち少
なくとも１種を主体とする膜を介在していることを特徴
とする太陽電池。(1) A transparent conductive film, p-type, i
Each layer of the type and 1) type is a-3i:)-1, or at least one layer of the p type and 1) type is a-s.
a-3 where ic:h and the i-type layer is a-3i:H
i semiconductor layer, in which at least one of platinum, niobium, palladium, and rhodium is mainly present between the transparent conductive film and the a-3i:l- (or a-3iC:l-1); A solar cell characterized by having a film interposed therebetween.
層がａ−３ｉ：）ｌであり又はｐ型及びｎ型のうちいず
れか少なくとも一方の層がａ−３ｉ Ｃ：Ｈであってｉ
型の層がａ−３ｉ：Ｈであるａ −３１半導体層と、透
明導電膜とを具備した太陽電池において、前記遮光性導
電基板と前記ａ−８ｉ：Ｈ又はａ−３ｉＣ：ｌ−（との
間、あるいは前記ａ−Ｓｉ ニド１又はａ−３ｉＣ：ｌ
−１と前記透明導電膜との間に白金、ニオブ、パラジウ
ム及びロジウムのうち少なくとも１種を主体とする膜を
介在していることを特徴とする太陽電池。(2) On the light-shielding conductive substrate, each of the p-type, 1-type, and n-type layers is a-3i:)l, or at least one of the p-type and n-type layers is a-3i C:H. And i
In a solar cell comprising an a-31 semiconductor layer whose mold layer is a-3i:H and a transparent conductive film, the light-shielding conductive substrate and the a-8i:H or a-3iC:l-(and or the a-Si nide 1 or a-3iC:l
-1 and the transparent conductive film, a film mainly containing at least one of platinum, niobium, palladium, and rhodium is interposed between the solar cell and the transparent conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57228917A JPS59119874A (en) | 1982-12-27 | 1982-12-27 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57228917A JPS59119874A (en) | 1982-12-27 | 1982-12-27 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59119874A true JPS59119874A (en) | 1984-07-11 |
| JPS6323672B2 JPS6323672B2 (en) | 1988-05-17 |
Family
ID=16883875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57228917A Granted JPS59119874A (en) | 1982-12-27 | 1982-12-27 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59119874A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6199385A (en) * | 1984-10-19 | 1986-05-17 | Sanyo Electric Co Ltd | Photoelectromotive force element |
| US4689438A (en) * | 1984-10-17 | 1987-08-25 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| JPH02111080A (en) * | 1988-10-20 | 1990-04-24 | Mitsubishi Heavy Ind Ltd | Amorphous thin-film solar cell |
| WO2003061018A1 (en) * | 2002-01-10 | 2003-07-24 | Tdk Corporation | Photovoltaic device |
| JP2009099643A (en) * | 2007-10-15 | 2009-05-07 | Mitsubishi Electric Corp | Thin-film solar cell element, and its manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54149593A (en) * | 1978-05-17 | 1979-11-22 | Seiko Epson Corp | Solar cell |
| JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
-
1982
- 1982-12-27 JP JP57228917A patent/JPS59119874A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54149593A (en) * | 1978-05-17 | 1979-11-22 | Seiko Epson Corp | Solar cell |
| JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689438A (en) * | 1984-10-17 | 1987-08-25 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| JPS6199385A (en) * | 1984-10-19 | 1986-05-17 | Sanyo Electric Co Ltd | Photoelectromotive force element |
| JPH02111080A (en) * | 1988-10-20 | 1990-04-24 | Mitsubishi Heavy Ind Ltd | Amorphous thin-film solar cell |
| WO2003061018A1 (en) * | 2002-01-10 | 2003-07-24 | Tdk Corporation | Photovoltaic device |
| JP2009099643A (en) * | 2007-10-15 | 2009-05-07 | Mitsubishi Electric Corp | Thin-film solar cell element, and its manufacturing method |
| JP4619388B2 (en) * | 2007-10-15 | 2011-01-26 | 三菱電機株式会社 | Thin film solar cell element and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6323672B2 (en) | 1988-05-17 |
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