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JPH01310578A - Photovoltaic device - Google Patents

Photovoltaic device

Info

Publication number
JPH01310578A
JPH01310578A JP63141281A JP14128188A JPH01310578A JP H01310578 A JPH01310578 A JP H01310578A JP 63141281 A JP63141281 A JP 63141281A JP 14128188 A JP14128188 A JP 14128188A JP H01310578 A JPH01310578 A JP H01310578A
Authority
JP
Japan
Prior art keywords
layer
silver
alloy
metal electrode
100å
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63141281A
Inventor
Koichi Hirose
Hiroyuki Honda
Takashi Shibuya
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP63141281A priority Critical patent/JPH01310578A/en
Publication of JPH01310578A publication Critical patent/JPH01310578A/en
Application status is Pending legal-status Critical

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/548Amorphous silicon PV cells

Abstract

PURPOSE: To improve a device in an output characteristic by a method wherein at least a layer of a metal electrode in contact with a semiconductor film is formed of an alloy of Ag(silver) and, at least, one of metals selected from Ti, Ni, Cr, Zn, Si or Mo.
CONSTITUTION: At least a layer of a metal electrode 4 in contact with a semiconductor film 3 is formed of an alloy of, at least, one of elements selected from Ti(titanium), Ni(nickel), Cr(chrome), Zn(zinc), Si(silicon), or Mo(molybdenum) and Ag(silver). And, the alloy layer is made less than 100Å in thickness when its silver content is less than 40% and equal to or more than 100Å in thickness when its silver content is equal to or more than 40%. By these processes, an output characteristic of this device can be improved and prevented from deteriorating without decreasing the metal electrode 4 in an adhesion to the semiconductor layer 3.
COPYRIGHT: (C)1989,JPO&Japio
JP63141281A 1988-06-08 1988-06-08 Photovoltaic device Pending JPH01310578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63141281A JPH01310578A (en) 1988-06-08 1988-06-08 Photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63141281A JPH01310578A (en) 1988-06-08 1988-06-08 Photovoltaic device

Publications (1)

Publication Number Publication Date
JPH01310578A true JPH01310578A (en) 1989-12-14

Family

ID=15288244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63141281A Pending JPH01310578A (en) 1988-06-08 1988-06-08 Photovoltaic device

Country Status (1)

Country Link
JP (1) JPH01310578A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7291374B2 (en) 1998-06-22 2007-11-06 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7314657B2 (en) 2000-07-21 2008-01-01 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7314660B2 (en) 2000-07-21 2008-01-01 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7314659B2 (en) 2000-07-21 2008-01-01 Target Technology Company, Llc Metal alloys for the reflective or semi-reflective layer of an optical storage medium
US7316837B2 (en) 2000-07-21 2008-01-08 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7374805B2 (en) 2000-07-21 2008-05-20 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7645500B2 (en) 2003-04-18 2010-01-12 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
JP2016143855A (en) * 2015-02-05 2016-08-08 シャープ株式会社 Photoelectric conversion element and method for manufacturing photoelectric conversion element
WO2017043522A1 (en) * 2015-09-09 2017-03-16 シャープ株式会社 Solar cell and method for manufacturing solar cell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5896780A (en) * 1981-12-04 1983-06-08 Matsushita Electric Ind Co Ltd Photoelectric conversion element
JPS58157176A (en) * 1982-03-15 1983-09-19 Hitachi Ltd Solar battery element
JPS59208789A (en) * 1983-05-12 1984-11-27 Agency Of Ind Science & Technol Solar cell
JPS60253281A (en) * 1984-05-29 1985-12-13 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5896780A (en) * 1981-12-04 1983-06-08 Matsushita Electric Ind Co Ltd Photoelectric conversion element
JPS58157176A (en) * 1982-03-15 1983-09-19 Hitachi Ltd Solar battery element
JPS59208789A (en) * 1983-05-12 1984-11-27 Agency Of Ind Science & Technol Solar cell
JPS60253281A (en) * 1984-05-29 1985-12-13 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7291374B2 (en) 1998-06-22 2007-11-06 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7384677B2 (en) 1998-06-22 2008-06-10 Target Technology Company, Llc Metal alloys for the reflective or semi-reflective layer of an optical storage medium
US7314657B2 (en) 2000-07-21 2008-01-01 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7314660B2 (en) 2000-07-21 2008-01-01 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7314659B2 (en) 2000-07-21 2008-01-01 Target Technology Company, Llc Metal alloys for the reflective or semi-reflective layer of an optical storage medium
US7316837B2 (en) 2000-07-21 2008-01-08 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7374805B2 (en) 2000-07-21 2008-05-20 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7645500B2 (en) 2003-04-18 2010-01-12 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
JP2016143855A (en) * 2015-02-05 2016-08-08 シャープ株式会社 Photoelectric conversion element and method for manufacturing photoelectric conversion element
WO2016125627A1 (en) * 2015-02-05 2016-08-11 シャープ株式会社 Photoelectric conversion element and method for manufacturing photoelectric conversion element
WO2017043522A1 (en) * 2015-09-09 2017-03-16 シャープ株式会社 Solar cell and method for manufacturing solar cell

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