JPS58157176A - Solar battery element - Google Patents
Solar battery elementInfo
- Publication number
- JPS58157176A JPS58157176A JP57039518A JP3951882A JPS58157176A JP S58157176 A JPS58157176 A JP S58157176A JP 57039518 A JP57039518 A JP 57039518A JP 3951882 A JP3951882 A JP 3951882A JP S58157176 A JPS58157176 A JP S58157176A
- Authority
- JP
- Japan
- Prior art keywords
- region
- main surface
- electrode
- exposed
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 4
- 238000005275 alloying Methods 0.000 claims description 2
- 229910018505 Ni—Mg Inorganic materials 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 238000011065 in-situ storage Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 14
- 239000002184 metal Substances 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007772 electrode material Substances 0.000 abstract description 4
- 239000000470 constituent Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- -1 For example Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は単結晶半導体を用いた太陽電池素子の改良に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in solar cell elements using single crystal semiconductors.
太陽電池は、太陽光エネルギーを直接電気エネルギー変
換するもので、エネルギー変換を行なう基体の種類によ
り単結晶シリコン太陽電池、多結晶シリコン太陽電池、
ＧａＡＳ系太陽電池、ＣｄＳ系太陽電池、アモルファス
シリコン太陽電池及び有機半導体太陽電池に分けられる
。本発明が対象としているのは単結晶シリコン太陽電池
である。Solar cells directly convert sunlight energy into electrical energy, and can be classified into monocrystalline silicon solar cells, polycrystalline silicon solar cells, polycrystalline silicon solar cells,
They are divided into GaAS solar cells, CdS solar cells, amorphous silicon solar cells, and organic semiconductor solar cells. The object of the present invention is a single crystal silicon solar cell.
従来の単結晶シリコンを用いた太陽電池は、第１図に示
すように、ｎ ＊ ｐ ｐ ＊ 構造のシリコン基体
１０１と、基体１０１のｎ０領域の露出面の一部にオー
ミック接触した第１の電極１０２と、基体１０１のｐ０
領域の露出面にオーミック接触し次第２の電極１０３と
から成り、ｎ０領域が露出する面を受光面とし危構成を
採っている。１０４は反射防止膜である。そしてこの構
成の太陽電池は、（１）ｐ型のシリコン基体を用意し、
その一方面より例えば燐を拡散してｎ０領域を形成する
。（２）シリコン基体の他方面にｋｔＭｔ−印刷或いは
蒸着で形成した後、加熱して合金しｐ０領域を形成する
、（３）シリコン基体の他方面からＡｊ−８ｔの共晶４
を除去する、（４）シリコン基体の一方面にＡｇの第１
の電極、他方面にＡｇ、Ａｇ−Ａｔ等の第２の電極を形
成する、各工程を経て製造される。かかる従来の太陽電
池は、ｈｔ−ｓｒ共晶層は殆んどの金属゛との接着性が
悪い念めに合金後除去しなければならず製造工程が複雑
となること、他方面全面にＡｇ倉主成分とする第２の電
極が設けられているので電極がコスト高となること１、
等の欠点がるる。As shown in FIG. 1, a conventional solar cell using single-crystal silicon includes a silicon substrate 101 with an n*p p* structure and a first silicon substrate in ohmic contact with a part of the exposed surface of the n0 region of the substrate 101. p0 of the electrode 102 and the base 101
It consists of a second electrode 103 that makes ohmic contact with the exposed surface of the region, and has a configuration in which the surface where the n0 region is exposed is used as the light receiving surface. 104 is an antireflection film. A solar cell with this configuration (1) prepares a p-type silicon substrate,
For example, phosphorus is diffused from one side to form an n0 region. (2) After ktMt is formed on the other side of the silicon substrate by printing or vapor deposition, it is heated and alloyed to form a p0 region. (3) Aj-8t eutectic 4 is formed on the other side of the silicon substrate.
(4) removing the first layer of Ag on one side of the silicon substrate;
The electrode is manufactured through steps of forming a second electrode of Ag, Ag-At, etc. on the other side. In such conventional solar cells, the HT-SR eutectic layer has to be removed after alloying to prevent poor adhesion with most metals, which complicates the manufacturing process. Since the second electrode, which is the main component, is provided, the cost of the electrode is high.1.
There are many drawbacks such as.
本発明の目的は、上記の欠点を除去した改良さ九九太陽
電池素子を提供することにるる。本発明の目的を更に具
体的に言えば、製造グロセスが簡単で、高価な電機材料
の使用量を削減し、かつ高効率の太陽電池素子を提供す
ることにるる。SUMMARY OF THE INVENTION The object of the present invention is to provide an improved solar cell element which eliminates the above-mentioned drawbacks. More specifically, the purpose of the present invention is to provide a solar cell element that is easy to manufacture, reduces the amount of expensive electrical materials used, and has high efficiency.
かかる目的を奏する本発明太陽電池素子の特徴とすると
ころは、ｎ”ｐｐ” 構造を有する半導体基体のｐ領
域を２９領域を貫通して主表面の選択され友個所に露出
し、ｐ領域の露出面にＡｇ、Ｔｉ−ｈｇ、ｈｔ−ｈｇ＋
ｃｒ−Ｎｉ−ｈｇ、ｃｕから選ば１之１の金属をオー
ミ′り接触し・ ｐ°５、領域の露出面及び第１の金属
上にＡｔを主成分とする第２の金属を接触した点にある
。本発明の他の特徴は、ｐ領域の露出面及びその上に接
触する第１の金属が半導体基体の受光面とは反対側の全
面に略均−に分布している点にるる、更に本発明の他の
特徴は、第２の金属の合金によってｐ′″領域が形成さ
れている点にある。A feature of the solar cell element of the present invention that achieves the above object is that the p region of the semiconductor substrate having the n"pp" structure is exposed at selected locations on the main surface by penetrating the 29 regions, and the p region is exposed at selected locations on the main surface. Ag, Ti-hg, ht-hg+ on the surface
1 to 1 metal selected from cr-Ni-hg and cu was brought into ohmic contact, and at p°5, the exposed surface of the region and the point where the second metal containing At as a main component was contacted on the first metal. It is in. Another feature of the present invention is that the exposed surface of the p region and the first metal in contact thereon are approximately evenly distributed over the entire surface of the semiconductor substrate opposite to the light-receiving surface. Another feature of the invention is that the p''' region is formed by an alloy of the second metal.
以下、本発明を実施例として示した図面により詳細に説
明する。Hereinafter, the present invention will be explained in detail with reference to the drawings shown as examples.
第２図において、１は互いに反対側圧位置する一対の主
表面１１．１２１−有する単結晶シリコンから成る半導
体基体で、主表面１１．１２間には、一方の主表面１１
に露出し一方の主表面１１に沿って拡がるｎ型導電性を
有する第１の領域１３゜第１の領域１３に隣接して第１
の領域１３との間にｐｎ接合Ｊｔ形成し、かつ他方の主
表面１２の選択された個所（図では格子状をなしている
Ｊに露出する第１の領域１３より低い不純物濃ｆを有す
るｐ型導電性の第２の領域１４、第２の領域１４に隣接
し他方の主表面１２の選択された個所を除く個所に露出
し第２の領域１４より高い不純物濃度を有するｐ型導電
性の第３の領域１５を具備している。２は半導体基体１
の受光面となる一方の主表面１１の選択された個所にオ
ーミック接触し次第１の電極、８は一方の主表面１１の
第１の電極２が接触していと個所を除く個所に形成し友
例えばＳ１０．の如き反射防止膜、４は半導体基体１の
他方の主表面１２にオーミック接触し次第２の電極で、
これは第２の領域１４の霧出個所にオーミック接触する
Ａｇ、 Ｔｉ−ｈｇ、ｈｔ−Ａｇ、Ｃｒ−Ｎｉ−λｇ、
ｃｕがら選ばれた金属からなる第１の部分４１と、第３
の領域１５の露出個所にオーミック接触し第１の部分を
被うように形成されＬｋｔｋ主成分とする金属からなる
第２の部分４２とから構成されている。５は第２の電極
４と外部リード（図示せず）とを接続するために第２の
部分４２を設けず第１の部分４１を露出した個所を示す
。In FIG. 2, reference numeral 1 denotes a semiconductor substrate made of single-crystal silicon having a pair of main surfaces 11 and 121 located opposite to each other;
A first region 13 having n-type conductivity exposed to the main surface 11 and extending along one main surface 11;
A p-n junction Jt is formed between the p-n junction Jt and the p-n junction Jt, and has an impurity concentration f lower than that of the first region 13 exposed to the selected portion of the other main surface 12 (in the figure, J forming a lattice shape). A second region 14 of p-type conductivity, which is adjacent to the second region 14 and is exposed at locations other than selected locations on the other main surface 12 and has a higher impurity concentration than the second region 14; It has a third region 15. 2 is a semiconductor substrate 1
As soon as the first electrode 8 comes into ohmic contact with the selected part of the one main surface 11 which becomes the light-receiving surface of For example, S10. As soon as the anti-reflection film 4 is in ohmic contact with the other main surface 12 of the semiconductor substrate 1, the second electrode is
This includes Ag, Ti-hg, ht-Ag, Cr-Ni-λg, and
a first portion 41 made of a metal selected from the cu;
A second portion 42 made of a metal containing Lktk as a main component is formed so as to be in ohmic contact with the exposed portion of the region 15 and cover the first portion. Reference numeral 5 indicates a portion where the second portion 42 is not provided and the first portion 41 is exposed in order to connect the second electrode 4 and an external lead (not shown).
かかる構成の太陽電池素子によれば、高価な金属からな
る第２の電極１４の第１の部分４１は他方の主表面１２
の全面ではなく選択された個所にのみ形成されている友
め、高価な電極材料の使用量を大幅に削減することがで
きる。また、ｐｎ接合Ｊから離れた点で発生した電子を
ｐｎ接合Ｊ側に押し戻す役目をする第３の領域１５を形
成する第２の電極４の第２の部分４２は［！ｉＩ外部リ
ードに接続しないため、第３の領域１５１に形成した後
除去する必要がなく、第３の領域１５に対する電極とし
てそのまま使用することができ、高価な電極材料の使用
量削減と製造工程の簡略化に寄与する。この点は次に述
べる製造工程の説明から明らかとなろう。即ち、第２図
に示し次素子は例えば次の工程を経て製造される。According to the solar cell element having such a configuration, the first portion 41 of the second electrode 14 made of an expensive metal is located on the other main surface 12.
Since the electrodes are formed only in selected areas rather than over the entire surface, the amount of expensive electrode materials used can be significantly reduced. Further, the second portion 42 of the second electrode 4 forming the third region 15 that serves to push back electrons generated at a point away from the pn junction J toward the pn junction J side is [! iI Since it is not connected to the external lead, there is no need to remove it after forming it in the third region 151, and it can be used as it is as an electrode for the third region 15, reducing the amount of expensive electrode material used and simplifying the manufacturing process. Contributes to simplification. This point will become clear from the following description of the manufacturing process. That is, the next element shown in FIG. 2 is manufactured through the following steps, for example.
（１）ｐ型の半導体基体を準備し、この一方の主表面側
に例えば拡散によってｎ型導電性の第１の領域を形成す
る。(1) A p-type semiconductor substrate is prepared, and a first region of n-type conductivity is formed on one main surface side of the substrate by, for example, diffusion.
（２）半導体基体の一方の主表面に反射防止膜及びＫｌ
の電極を形成する。(2) An antireflection film and Kl on one main surface of the semiconductor substrate.
form an electrode.
（３）半導体基体の他方の主表面Ｉの選択され汽個所に
ｈｇ、Ｔ ｉ−ｈｇ、ｈｔ−ｈｇ、ｃｒ−Ｎｉ−Ａｇ、
Ｃｕから選ばれた第２の電極の第１の部分を形成する。(3) hg, Ti-hg, ht-hg, cr-Ni-Ag,
Forming a first portion of a second electrode selected from Cu.
（４１半導体基体の他方の主表面上に＠１の部分を被う
ようにＡｔｔ主成分とする第２の電極の第２の部分を形
成し１次に熱処理して第２の部分を半導体基体に合金し
第３の領域を形成する。(41 Form the second part of the second electrode containing Att as the main component so as to cover the part @1 on the other main surface of the semiconductor substrate, and then heat-treat the second part to form the second part on the semiconductor substrate. to form a third region.
以上の工程かられかるように、第２の電極は第１の部分
を形成し几後その上から第２の部分を形成する方法で構
成するより他に構成する方法がなく、従って上述の効果
を奏するのでるる。As can be seen from the above steps, there is no other way to construct the second electrode than by forming the first part and then forming the second part thereon. Therefore, the above-mentioned effect can be achieved. It is played by Ruru.
本発明における第１の電極及び第ンの電極の第１の部分
の形状は、例えば格子状、六角網目状、平行線状同心円
状等の主表面の全面から均等に光電流を取り出せる形状
が好ましい。The shape of the first portion of the first electrode and the second electrode in the present invention is preferably a shape such as a lattice shape, a hexagonal mesh shape, a parallel linear concentric circle shape, etc. that allows photocurrent to be taken out evenly from the entire main surface. .
第１図は従来の太陽電池素子の概略断面図、第２図は本
発明太陽電池素子の平面図及び断面図である。
１・・・半導体基体％ ２・・・第１の電極、４・・・
第２の寛弔／口FIG. 1 is a schematic sectional view of a conventional solar cell element, and FIG. 2 is a plan view and a sectional view of the solar cell element of the present invention. 1... Semiconductor base % 2... First electrode, 4...
Second condolence/mouth
Claims (1)
面に露出し一方の主表面に沿って広がるｎ置場電性のＩ
ｌｌの領域、１１１の領域ＫＩＩ＊してｐｎ＊＊を形成
し一部が他方の主表面の選択された個所に露出する第１
の領域より低い不純物濃度を有するｐｍ導電性の１１Ｉ
２の１域、第２の領域に１１＊Ｌ他方の主表面の選択さ
れた個所を除く個所に露出するＩＩ２の領域より高い不
純物１１１ｆを有するｐ雛導電性の第３の領域を有する
半導体基体と。 半導体基体の一方の主表面の選択された個所にオーミッ
ク接触し７’ｔｌｌｆｌの電極と。 半導体基体の一方の主表面の残ｐ備所に形成し九反射防
止膜と。 半導体基体の他方の主表面において、第２の領域の露出
面にオーミック接触したＡ１．Ｔムーλｇ、Ａｔ−Ａｇ
、Ｃｒ−Ｎｉ−ムｇ＊ｃ”から選ばれた金属からなる第
１の部分と ｍｓの領域の露出ｒｊｊＪＫオーミック接
触すると共に第１の部分の選択された個所上を被うよう
に形成されたＡｔ金主成分とする第２の部分とから成る
第２の電極と、 を備え、半導体基体の一方の主表面を受光面としたこと
を特徴とする太陽電池素子。 ２、特許請求の範囲第１項において、第２の領域の他方
の主表面に露出している部分及び第２の電極の第１の部
分が網目状をなすことｔ−特徴とする太陽電池素子。 ３、特許請求の範囲第１項或いは第２項において、第３
の領域は第２の電極の第２の部分が半導体基体へ合金す
ることによって形成され次領域でるることを特徴とする
太陽電池素子。[Scope of Claims] 1. A pair of main surfaces located on opposite sides of each other, an in-situ electrically conductive I exposed on one main surface and spreading along the other main surface.
The first region KII* of 111 forms a pn** and a portion thereof is exposed at a selected location on the other main surface.
11I of pm conductivity with impurity concentration lower than the region of
A semiconductor substrate having a p-conductivity third region having a higher impurity 111f than the region II2 exposed in the second region except for the selected portion of the other main surface. and. A 7'tllfl electrode is in ohmic contact with a selected location on one main surface of the semiconductor substrate. An anti-reflection film is formed on the remaining portions of one main surface of the semiconductor substrate. A1. in ohmic contact with the exposed surface of the second region on the other main surface of the semiconductor substrate. T mu λg, At-Ag
, Cr-Ni-Mg*c'', and was formed so as to be in ohmic contact with the exposed rjjJK region of ms and to cover a selected part of the first part. a second electrode consisting of a second portion mainly containing At gold; and a solar cell element characterized in that one main surface of the semiconductor substrate is used as a light-receiving surface. The solar cell element according to item 1, characterized in that the portion exposed to the other main surface of the second region and the first portion of the second electrode form a mesh shape. 3. Claims In the first or second term, the third term
A solar cell element characterized in that the region is formed by alloying the second portion of the second electrode to the semiconductor substrate and becomes the next region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57039518A JPS58157176A (en) | 1982-03-15 | 1982-03-15 | Solar battery element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57039518A JPS58157176A (en) | 1982-03-15 | 1982-03-15 | Solar battery element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58157176A true JPS58157176A (en) | 1983-09-19 |
| JPS6258672B2 JPS6258672B2 (en) | 1987-12-07 |
Family
ID=12555257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57039518A Granted JPS58157176A (en) | 1982-03-15 | 1982-03-15 | Solar battery element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58157176A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179373A (en) * | 1988-01-06 | 1989-07-17 | Hitachi Ltd | Solar cell element |
| JPH01310578A (en) * | 1988-06-08 | 1989-12-14 | Sanyo Electric Co Ltd | Photovoltaic device |
| JP2000332269A (en) * | 1999-05-19 | 2000-11-30 | Sharp Corp | Solar battery and manufacture thereof |
-
1982
- 1982-03-15 JP JP57039518A patent/JPS58157176A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179373A (en) * | 1988-01-06 | 1989-07-17 | Hitachi Ltd | Solar cell element |
| JPH0573357B2 (en) * | 1988-01-06 | 1993-10-14 | Hitachi Ltd | |
| JPH01310578A (en) * | 1988-06-08 | 1989-12-14 | Sanyo Electric Co Ltd | Photovoltaic device |
| JP2000332269A (en) * | 1999-05-19 | 2000-11-30 | Sharp Corp | Solar battery and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6258672B2 (en) | 1987-12-07 |
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