FR2430668A1 - Plaquette epitaxique destinee a la fabrication d'une diode d'emission lumineuse - Google Patents
Plaquette epitaxique destinee a la fabrication d'une diode d'emission lumineuseInfo
- Publication number
- FR2430668A1 FR2430668A1 FR7917475A FR7917475A FR2430668A1 FR 2430668 A1 FR2430668 A1 FR 2430668A1 FR 7917475 A FR7917475 A FR 7917475A FR 7917475 A FR7917475 A FR 7917475A FR 2430668 A1 FR2430668 A1 FR 2430668A1
- Authority
- FR
- France
- Prior art keywords
- manufacture
- light emission
- epitaxic
- wafer
- emission diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/119—Phosphides of gallium or indium
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
La plaquette épitaxique comprend un substrat semi-conducteur mono-cristallin, et une couche épitaxique d'un composé semi-conducteur dopé par de l'azote et qui présente la formule générale GaAs 1-x PX , dans laquelle le rapport x du cristal mixte est compris entre 0,5 et 1,0. La couche épitaxique présente une concentration de supports présentant un même type de conductivité comprise entre 3,5 x 10**15 et 8,8 x 10**l5/cm3. Application à la fabrication des diodes d'émission lumineuse.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53082739A JPS581539B2 (ja) | 1978-07-07 | 1978-07-07 | エピタキシヤルウエハ− |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2430668A1 true FR2430668A1 (fr) | 1980-02-01 |
FR2430668B1 FR2430668B1 (fr) | 1985-05-10 |
Family
ID=13782775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7917475A Granted FR2430668A1 (fr) | 1978-07-07 | 1979-07-05 | Plaquette epitaxique destinee a la fabrication d'une diode d'emission lumineuse |
Country Status (5)
Country | Link |
---|---|
US (1) | US4252576A (fr) |
JP (1) | JPS581539B2 (fr) |
DE (1) | DE2927454C3 (fr) |
FR (1) | FR2430668A1 (fr) |
GB (1) | GB2025134B (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4675709A (en) * | 1982-06-21 | 1987-06-23 | Xerox Corporation | Quantized layered structures with adjusted indirect bandgap transitions |
JPS60176997A (ja) * | 1984-02-23 | 1985-09-11 | Sumitomo Electric Ind Ltd | 低転位密度の3−5化合物半導体単結晶 |
JPS61291491A (ja) * | 1985-06-19 | 1986-12-22 | Mitsubishi Monsanto Chem Co | りん化ひ化ガリウム混晶エピタキシヤルウエハ |
JPS63162890A (ja) * | 1986-12-26 | 1988-07-06 | Mitsui Toatsu Chem Inc | m−ヒドロキシベンジルアルコ−ルの電解合成法 |
JPH01234584A (ja) * | 1988-03-14 | 1989-09-19 | Mitsui Toatsu Chem Inc | 有機物の電解還元反応に用いる陽極 |
JPH028386A (ja) * | 1988-06-27 | 1990-01-11 | Mitsui Toatsu Chem Inc | m−ヒドロキシ安息香酸の電解還元法 |
US5445897A (en) * | 1989-11-22 | 1995-08-29 | Mitsubishi Kasei Polytec Company | Epitaxial wafer and process for producing the same |
JP3111644B2 (ja) * | 1992-06-09 | 2000-11-27 | 三菱化学株式会社 | りん化ひ化ガリウムエピタキシャルウエハ |
JP3436379B2 (ja) * | 1992-07-28 | 2003-08-11 | 三菱化学株式会社 | りん化ひ化ガリウムエピタキシャルウエハ |
JP3143040B2 (ja) * | 1995-06-06 | 2001-03-07 | 三菱化学株式会社 | エピタキシャルウエハおよびその製造方法 |
JP3355901B2 (ja) * | 1995-12-27 | 2002-12-09 | 信越半導体株式会社 | 化合物半導体エピタキシャルウエーハ |
US20020163059A1 (en) * | 2000-02-17 | 2002-11-07 | Hamerski Roman J. | Device with epitaxial base |
USD997944S1 (en) * | 2021-08-05 | 2023-09-05 | Cor Sanctum, LLC | Anti-eavesdropping device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3725749A (en) * | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
DE2402183A1 (de) * | 1973-01-18 | 1974-07-25 | Ferranti Ltd | Elektrolumineszierende vorrichtung und verfahren zu deren herstellung |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3398310A (en) * | 1965-03-11 | 1968-08-20 | Hewlett Packard Co | Indirect energy band gap topology injection electroluminescence source |
US3617820A (en) * | 1966-11-18 | 1971-11-02 | Monsanto Co | Injection-luminescent diodes |
JPS4921991B1 (fr) * | 1969-06-27 | 1974-06-05 | ||
JPS5129636B1 (fr) * | 1970-12-25 | 1976-08-26 | ||
US3873382A (en) * | 1971-06-30 | 1975-03-25 | Monsanto Co | Process for the preparation of semiconductor materials and devices |
US4001056A (en) * | 1972-12-08 | 1977-01-04 | Monsanto Company | Epitaxial deposition of iii-v compounds containing isoelectronic impurities |
US3931631A (en) * | 1973-07-23 | 1976-01-06 | Monsanto Company | Gallium phosphide light-emitting diodes |
US3963538A (en) * | 1974-12-17 | 1976-06-15 | International Business Machines Corporation | Two stage heteroepitaxial deposition process for GaP/Si |
US4154630A (en) * | 1975-01-07 | 1979-05-15 | U.S. Philips Corporation | Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process |
JPS5366388A (en) * | 1976-11-26 | 1978-06-13 | Mitsubishi Monsanto Chem | Method of producing compound semiconductor light emitting diode |
JPS6012794B2 (ja) * | 1976-11-22 | 1985-04-03 | 三菱化成ポリテック株式会社 | 電気発光物質の製造方法 |
-
1978
- 1978-07-07 JP JP53082739A patent/JPS581539B2/ja not_active Expired
-
1979
- 1979-07-04 GB GB7923262A patent/GB2025134B/en not_active Expired
- 1979-07-05 FR FR7917475A patent/FR2430668A1/fr active Granted
- 1979-07-06 DE DE2927454A patent/DE2927454C3/de not_active Expired - Lifetime
- 1979-07-06 US US06/055,377 patent/US4252576A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3725749A (en) * | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
DE2402183A1 (de) * | 1973-01-18 | 1974-07-25 | Ferranti Ltd | Elektrolumineszierende vorrichtung und verfahren zu deren herstellung |
GB1465691A (en) * | 1973-01-18 | 1977-02-23 | Ferranti Ltd | Electroluminescent devices and apparatus including such devices |
Non-Patent Citations (1)
Title |
---|
EXBK/69 * |
Also Published As
Publication number | Publication date |
---|---|
FR2430668B1 (fr) | 1985-05-10 |
GB2025134A (en) | 1980-01-16 |
JPS559467A (en) | 1980-01-23 |
GB2025134B (en) | 1983-03-02 |
DE2927454C3 (de) | 1996-06-20 |
JPS581539B2 (ja) | 1983-01-11 |
DE2927454A1 (de) | 1980-01-17 |
DE2927454C2 (fr) | 1989-03-02 |
US4252576B1 (fr) | 1989-01-03 |
US4252576A (en) | 1981-02-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
TP | Transmission of property |