ES2181671T3 - Transistor de efecto de campo de metal semiconductor de alta frecuencia y alta potencia formado de carburo de silicio. - Google Patents

Transistor de efecto de campo de metal semiconductor de alta frecuencia y alta potencia formado de carburo de silicio.

Info

Publication number
ES2181671T3
ES2181671T3 ES92305417T ES92305417T ES2181671T3 ES 2181671 T3 ES2181671 T3 ES 2181671T3 ES 92305417 T ES92305417 T ES 92305417T ES 92305417 T ES92305417 T ES 92305417T ES 2181671 T3 ES2181671 T3 ES 2181671T3
Authority
ES
Spain
Prior art keywords
epitaxial layer
silicon carbide
metal field
high frequency
high power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92305417T
Other languages
English (en)
Inventor
John W Palmour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ES2181671T3 publication Critical patent/ES2181671T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

SE PRESENTA UN TRANSISTOR DE ALTA POTENCIA, DE EFECTO DE CAMPO DE METAL SEMICONDUCTOR, Y DE ALTA FRECUENCIA QUE COMPRENDE UN SUBSTRATO DE CARBURO DE SILICIO DE CRISTAL SIMPLE EN BRUTO (10), UNA PRIMERA CAPA EPITAXIAL (12) DE CARBURO DE SILICIO DE CONDUCTIVIDAD TIPO P FORMADA SOBRE EL SUBSTRATO, Y UNA SEGUNDA CAPA EPITAXIAL (14) DE CARBURO DE SILICIO DE TIPO N FORMADA SOBRE LA PRIMERA CAPA EPITAXIAL. LA SEGUNDA CAPA EPITAXIAL TIENE DOS CAVIDADES SEPARADAS (18, 16) QUE ESTAN DEFINIDAS RESPECTIVAMENTE POR CONCENTRACIONES MAYORES DE MATERIAL DE SOPORTE DE IONES DOPANTES DE TIPO N DE LAS QUE ESTAN PRESENTES EN EL RESTO DE LA SEGUNDA CAPA EPITAXIAL. UNOS CONTACTOS OMICOS (20, 22) ESTAN SITUADOS SOBRE LAS CAVIDADES PARA DEFINIR RESPECTIVAMENTE UNA DE LAS CAVIDADES (18) COMO CATODO Y LA OTRA (16) COMO ANODO. UN CONTACTO DE METAL "SCHOTTKY" SE SITUA SOBRE UNA PARTE DE LA SEGUNDA CAPA EPITAXIAL (149 QUE SE ENCUENTRA ENTRE LOS CONTACTOS OMICOS (20, 22) Y POR LO TANTO ENTRE EL CATODO Y EL ANODO PARA FORMAR UN CANAL ACTIVO EN LA SEGUNDA CAPA EPITAXIAL CUANDO SE EFECTUE UNA DESVIACION HACIA EL CONTACTO "SCHOTTKY" (24).
ES92305417T 1991-06-14 1992-06-12 Transistor de efecto de campo de metal semiconductor de alta frecuencia y alta potencia formado de carburo de silicio. Expired - Lifetime ES2181671T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/715,560 US5270554A (en) 1991-06-14 1991-06-14 High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide

Publications (1)

Publication Number Publication Date
ES2181671T3 true ES2181671T3 (es) 2003-03-01

Family

ID=24874555

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92305417T Expired - Lifetime ES2181671T3 (es) 1991-06-14 1992-06-12 Transistor de efecto de campo de metal semiconductor de alta frecuencia y alta potencia formado de carburo de silicio.

Country Status (6)

Country Link
US (1) US5270554A (es)
EP (1) EP0518683B1 (es)
JP (1) JP3499884B2 (es)
AT (1) ATE223109T1 (es)
DE (1) DE69232748T2 (es)
ES (1) ES2181671T3 (es)

Families Citing this family (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
US5925895A (en) * 1993-10-18 1999-07-20 Northrop Grumman Corporation Silicon carbide power MESFET with surface effect supressive layer
JP3085078B2 (ja) * 1994-03-04 2000-09-04 富士電機株式会社 炭化けい素電子デバイスの製造方法
KR0153878B1 (ko) * 1994-06-07 1998-10-15 쿠미하시 요시유키 탄화규소반도체장치와 그 제조방법
US5686737A (en) * 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5766343A (en) * 1995-01-17 1998-06-16 The United States Of America As Represented By The Secretary Of The Navy Lower bandgap, lower resistivity, silicon carbide heteroepitaxial material, and method of making same
US6002148A (en) * 1995-06-30 1999-12-14 Motorola, Inc. Silicon carbide transistor and method
SE9601176D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby
SE9601175D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd A method for producing a semiconductor device by the use of an implanting step and a device produced thereby
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
DE19712561C1 (de) * 1997-03-25 1998-04-30 Siemens Ag SiC-Halbleiteranordnung mit hoher Kanalbeweglichkeit
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
US5969378A (en) * 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor
WO1999005728A1 (en) 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6555452B2 (en) 1997-11-18 2003-04-29 Technologies And Devices International, Inc. Method for growing p-type III-V compound material utilizing HVPE techniques
US6472300B2 (en) 1997-11-18 2002-10-29 Technologies And Devices International, Inc. Method for growing p-n homojunction-based structures utilizing HVPE techniques
US6479839B2 (en) 1997-11-18 2002-11-12 Technologies & Devices International, Inc. III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer
US6599133B2 (en) 1997-11-18 2003-07-29 Technologies And Devices International, Inc. Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques
US6559038B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. Method for growing p-n heterojunction-based structures utilizing HVPE techniques
US20020047135A1 (en) * 1997-11-18 2002-04-25 Nikolaev Audrey E. P-N junction-based structures utilizing HVPE grown III-V compound layers
US6890809B2 (en) * 1997-11-18 2005-05-10 Technologies And Deviles International, Inc. Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
US6559467B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
US6476420B2 (en) 1997-11-18 2002-11-05 Technologies And Devices International, Inc. P-N homojunction-based structures utilizing HVPE growth III-V compound layers
US6849862B2 (en) * 1997-11-18 2005-02-01 Technologies And Devices International, Inc. III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer
US6150680A (en) * 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
US6027954A (en) * 1998-05-29 2000-02-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Gas sensing diode and method of manufacturing
US6803243B2 (en) 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6884644B1 (en) 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
SE520119C2 (sv) * 1998-10-13 2003-05-27 Ericsson Telefon Ab L M Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar
SE9900358D0 (sv) * 1999-02-03 1999-02-03 Ind Mikroelektronikcentrum Ab A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor
EP1163696B1 (en) * 1999-02-03 2010-08-04 Cree Sweden AB A LATERAL FIELD EFFECT TRANSISTOR OF SiC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (en) 1999-03-04 2009-12-16 Nichia Corporation Nitride semiconductor laser device
US6396080B2 (en) 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6366266B1 (en) 1999-09-02 2002-04-02 Micron Technology, Inc. Method and apparatus for programmable field emission display
US6686616B1 (en) * 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
SE520109C2 (sv) * 2000-05-17 2003-05-27 Ericsson Telefon Ab L M Effekttransistorer för radiofrekvenser
US6956238B2 (en) * 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US7009209B2 (en) 2001-01-03 2006-03-07 Mississippi State University Research And Technology Corporation (Rtc) Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
JP2002252233A (ja) * 2001-02-22 2002-09-06 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6909119B2 (en) * 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6507046B2 (en) * 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
JP2003007976A (ja) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp 半導体装置及びモジュール装置
US6906350B2 (en) 2001-10-24 2005-06-14 Cree, Inc. Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
US6956239B2 (en) * 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US7898047B2 (en) 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
US6979863B2 (en) * 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
KR100553935B1 (ko) * 2003-08-20 2006-02-24 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
US7413958B2 (en) * 2003-12-04 2008-08-19 Bae Systems Information And Electronic Systems Integration Inc. GaN-based permeable base transistor and method of fabrication
US20050127399A1 (en) * 2003-12-12 2005-06-16 Meadows Ronald C. Non-uniform gate pitch semiconductor devices
US7135747B2 (en) * 2004-02-25 2006-11-14 Cree, Inc. Semiconductor devices having thermal spacers
US7470967B2 (en) * 2004-03-12 2008-12-30 Semisouth Laboratories, Inc. Self-aligned silicon carbide semiconductor devices and methods of making the same
EP1743373B1 (en) * 2004-03-19 2013-05-08 Fairchild Semiconductor Corporation Schottky diode with durable contact on silicon carbide and method of fabrication
JP4708722B2 (ja) * 2004-03-25 2011-06-22 新日本無線株式会社 炭化珪素半導体装置の製造方法
US7275357B2 (en) * 2004-03-30 2007-10-02 Cnh America Llc Cotton module program control using yield monitor signal
US7118970B2 (en) * 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
US7238224B2 (en) * 2004-10-29 2007-07-03 Hewlett-Packard Development Company, L.P. Fluid-gas separator
US20060091606A1 (en) * 2004-10-28 2006-05-04 Gary Paugh Magnetic building game
US7348612B2 (en) * 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
US7265399B2 (en) * 2004-10-29 2007-09-04 Cree, Inc. Asymetric layout structures for transistors and methods of fabricating the same
JP2006165387A (ja) * 2004-12-09 2006-06-22 Sumitomo Electric Ind Ltd 双方向型電界効果トランジスタおよびマトリクスコンバータ
US7326962B2 (en) * 2004-12-15 2008-02-05 Cree, Inc. Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same
US7531849B2 (en) * 2005-01-25 2009-05-12 Moxtronics, Inc. High performance FET devices
US7247550B2 (en) * 2005-02-08 2007-07-24 Teledyne Licensing, Llc Silicon carbide-based device contact and contact fabrication method
US7476594B2 (en) * 2005-03-30 2009-01-13 Cree, Inc. Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US8203185B2 (en) * 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
US20070018199A1 (en) 2005-07-20 2007-01-25 Cree, Inc. Nitride-based transistors and fabrication methods with an etch stop layer
US7402844B2 (en) * 2005-11-29 2008-07-22 Cree, Inc. Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods
US7368971B2 (en) * 2005-12-06 2008-05-06 Cree, Inc. High power, high frequency switch circuits using strings of power transistors
JP5194380B2 (ja) 2006-04-28 2013-05-08 日産自動車株式会社 半導体装置
US8049272B2 (en) * 2006-06-16 2011-11-01 Cree, Inc. Transistors having implanted channel layers and methods of fabricating the same
US7821015B2 (en) * 2006-06-19 2010-10-26 Semisouth Laboratories, Inc. Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
JP5645404B2 (ja) 2006-08-17 2014-12-24 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 高電力絶縁ゲート・バイポーラ・トランジスタ
US7646043B2 (en) * 2006-09-28 2010-01-12 Cree, Inc. Transistors having buried p-type layers coupled to the gate
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
US7582518B2 (en) * 2006-11-14 2009-09-01 Northrop Grumman Space & Mission Systems Corp. High electron mobility transistor semiconductor device and fabrication method thereof
US7880172B2 (en) * 2007-01-31 2011-02-01 Cree, Inc. Transistors having implanted channels and implanted P-type regions beneath the source region
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8288220B2 (en) 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
JP4985757B2 (ja) * 2009-12-25 2012-07-25 株式会社デンソー 炭化珪素半導体装置
JP2011159714A (ja) * 2010-01-29 2011-08-18 Denso Corp 炭化珪素半導体装置およびその製造方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9673283B2 (en) 2011-05-06 2017-06-06 Cree, Inc. Power module for supporting high current densities
CN102339868B (zh) * 2011-09-01 2013-08-14 西安电子科技大学 带反型隔离层结构的金属半导体场效应晶体管及制作方法
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
TW201417149A (zh) * 2012-10-31 2014-05-01 Lg Innotek Co Ltd 磊晶晶圓
CN102931272A (zh) * 2012-11-23 2013-02-13 中国科学院微电子研究所 一种具有增益的紫外探测器结构及其制备方法
US9281196B2 (en) 2013-12-31 2016-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method to reduce etch variation using ion implantation
US10134839B2 (en) * 2015-05-08 2018-11-20 Raytheon Company Field effect transistor structure having notched mesa
CN105261642B (zh) * 2015-08-21 2019-04-12 西安电子科技大学 异质结高电子迁移率自旋场效应晶体管及制造方法
CN105304705B (zh) * 2015-08-21 2019-01-11 西安电子科技大学 异质结高电子迁移率自旋场效应晶体管及制造方法
CN105261641A (zh) * 2015-08-21 2016-01-20 西安电子科技大学 异质结高电子迁移率自旋场效应晶体管及制造方法
US10818659B2 (en) 2018-10-16 2020-10-27 Globalfoundries Inc. FinFET having upper spacers adjacent gate and source/drain contacts
US10580701B1 (en) 2018-10-23 2020-03-03 Globalfoundries Inc. Methods of making a self-aligned gate contact structure and source/drain metallization structures on integrated circuit products

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53134363A (en) * 1977-04-28 1978-11-22 Fujitsu Ltd Semiconductor device
JPS54155482U (es) * 1978-04-21 1979-10-29
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
JPS60142568A (ja) * 1983-12-29 1985-07-27 Sharp Corp 炭化珪素電界効果トランジスタの製造方法
JPS60154674A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 電子装置の製造方法
JP2615390B2 (ja) * 1985-10-07 1997-05-28 工業技術院長 炭化シリコン電界効果トランジスタの製造方法
DE3685495D1 (de) * 1986-07-11 1992-07-02 Ibm Verfahren zur herstellung einer unteraetzten maskenkontur.
JPS6347983A (ja) * 1986-08-18 1988-02-29 Sharp Corp 炭化珪素電界効果トランジスタ
JPH0797660B2 (ja) * 1987-10-20 1995-10-18 三洋電機株式会社 ＳｉＣ青色発光ダイオード
JPH0797659B2 (ja) * 1987-10-20 1995-10-18 三洋電機株式会社 ＳｉＣ青色発光ダイオード
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
JPH0798684B2 (ja) * 1988-01-19 1995-10-25 日本碍子株式会社 高密度ＳｉＣ焼結体の製造方法
JP2612040B2 (ja) * 1988-06-28 1997-05-21 株式会社豊田中央研究所 β−ＳｉＣを用いたＭＯＳ・ＦＥＴ及びその製造方法
JPH0770695B2 (ja) * 1989-03-27 1995-07-31 シャープ株式会社 炭化珪素半導体装置の製造方法

Also Published As

Publication number Publication date
ATE223109T1 (de) 2002-09-15
DE69232748D1 (de) 2002-10-02
JP3499884B2 (ja) 2004-02-23
US5270554A (en) 1993-12-14
JPH05175239A (ja) 1993-07-13
EP0518683B1 (en) 2002-08-28
EP0518683A1 (en) 1992-12-16
DE69232748T2 (de) 2003-08-07

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