JP4708722B2 - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- JP4708722B2 JP4708722B2 JP2004088185A JP2004088185A JP4708722B2 JP 4708722 B2 JP4708722 B2 JP 4708722B2 JP 2004088185 A JP2004088185 A JP 2004088185A JP 2004088185 A JP2004088185 A JP 2004088185A JP 4708722 B2 JP4708722 B2 JP 4708722B2
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- oxide film
- region
- forming
- semiconductor layer
- electrode
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- 239000004065 semiconductor Substances 0.000 title claims description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 20
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title description 11
- 238000000034 method Methods 0.000 title description 10
- 239000012535 impurity Substances 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 20
- 150000002500 ions Chemical class 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 33
- 229910052814 silicon oxide Inorganic materials 0.000 description 33
- 230000005669 field effect Effects 0.000 description 17
- 108091006146 Channels Proteins 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 8
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- -1 nitrogen ions Chemical class 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
Claims (1)
- 炭化珪素半導体層からなる一導電型の半導体層を用意する工程と、
該一導電型の半導体層上に酸化膜を形成する工程と、
所定の間隔で離間するオーミック電極形成予定領域の前記酸化膜の一部を除去し、凹部を形成する工程と、
該凹部内の前記酸化膜を通して、前記一導電型の半導体層に不純物イオンを注入し、該不純物イオンを活性化するため熱処理を行い、前記半導体層より不純物濃度の高い一導電型の半導体領域を形成する工程と、
前記凹部内に残る前記酸化膜を除去し、前記半導体領域を露出する工程と、
前記酸化膜及び前記半導体領域表面を、該半導体領域とオーミック接触を形成する金属膜で被覆する工程と、
前記酸化膜をエッチング除去することにより、該酸化膜上の前記金属膜を除去し、前記半導体領域上に前記金属膜を選択的に形成し、前記オーミック電極を形成する工程と、
該オーミック電極間の前記半導体層上に、該半導体層とショットキー接触を形成するショットキー電極を形成する工程とを含むことを特徴とする炭化珪素半導体装置の製造方法。
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JP2004088185A JP4708722B2 (ja) | 2004-03-25 | 2004-03-25 | 炭化珪素半導体装置の製造方法 |
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JP2004088185A JP4708722B2 (ja) | 2004-03-25 | 2004-03-25 | 炭化珪素半導体装置の製造方法 |
Publications (2)
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JP2005277108A JP2005277108A (ja) | 2005-10-06 |
JP4708722B2 true JP4708722B2 (ja) | 2011-06-22 |
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JP2004088185A Expired - Lifetime JP4708722B2 (ja) | 2004-03-25 | 2004-03-25 | 炭化珪素半導体装置の製造方法 |
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JP (1) | JP4708722B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5546105B2 (ja) | 2007-01-19 | 2014-07-09 | 富士フイルム株式会社 | ペロブスカイト型酸化物とその製造方法、圧電体膜、圧電素子、液体吐出装置 |
WO2019182107A1 (ja) * | 2018-03-22 | 2019-09-26 | 住友大阪セメント株式会社 | 複合焼結体、静電チャック部材、静電チャック装置および複合焼結体の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4925873A (ja) * | 1972-07-04 | 1974-03-07 | ||
JPS5812368A (ja) * | 1981-07-16 | 1983-01-24 | Toshiba Corp | GaAs電界効果トランジスタの製造方法 |
JPS60110174A (ja) * | 1983-11-21 | 1985-06-15 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタの製造方法 |
JPS61222263A (ja) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | 電界効果トランジスタの製造方法 |
JPH05175239A (ja) * | 1991-06-14 | 1993-07-13 | Cree Res Inc | 高電力、高周波金属−半導体電界効果トランジスタ |
JP2002314071A (ja) * | 2001-04-18 | 2002-10-25 | Denso Corp | 炭化珪素半導体装置の製造方法 |
-
2004
- 2004-03-25 JP JP2004088185A patent/JP4708722B2/ja not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4925873A (ja) * | 1972-07-04 | 1974-03-07 | ||
JPS5812368A (ja) * | 1981-07-16 | 1983-01-24 | Toshiba Corp | GaAs電界効果トランジスタの製造方法 |
JPS60110174A (ja) * | 1983-11-21 | 1985-06-15 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタの製造方法 |
JPS61222263A (ja) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | 電界効果トランジスタの製造方法 |
JPH05175239A (ja) * | 1991-06-14 | 1993-07-13 | Cree Res Inc | 高電力、高周波金属−半導体電界効果トランジスタ |
JP2002314071A (ja) * | 2001-04-18 | 2002-10-25 | Denso Corp | 炭化珪素半導体装置の製造方法 |
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