JP7103444B2 - 炭化珪素半導体素子 - Google Patents
炭化珪素半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 73
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 70
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 66
- 239000010410 layer Substances 0.000 claims description 67
- 239000011229 interlayer Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 47
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 39
- 239000012535 impurity Substances 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 239000004020 conductor Substances 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 description 37
- 150000002500 ions Chemical class 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 238000005468 ion implantation Methods 0.000 description 11
- 239000002243 precursor Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000000047 product Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Description
本発明の実施の形態では、炭化珪素基板に対する熱処理を2回実施する。第1の熱処理工程では、Siイオンを注入した後、電極膜を接触させた炭化珪素基板を熱処理して、電極膜と高濃度不純物領域を含む炭化珪素基板との間に加熱反応層前駆体層を形成する。この後、加熱反応層前駆体層および酸化膜上部に残された未反応の電極膜を除去する。この後、第2の熱処理工程では、未反応の電極膜を除去した後の炭化珪素基板を熱処理して開口部の窓内底の加熱反応層前駆体層を加熱反応層に転化させる。
2 p型ウェル領域
3 p型コンタクト領域
4 n型ソース領域
5 ゲート絶縁膜
6 ゲート電極
7 層間絶縁膜
8 加熱反応層前駆体層,加熱反応層
9 配線導体
10 裏面電極
Claims (2)
- 第1導電型半導体基板と、前記第1導電型半導体基板に堆積された、前記第1導電型半導体基板よりも不純物濃度の低い第1導電型半導体堆積層と、
前記第1導電型半導体堆積層表面に選択的に形成された第2導電型ウェル領域と、
前記第2導電型ウェル領域表面にそれぞれ形成された前記第2導電型ウェル領域よりも不純物濃度が高い第2導電型コンタクト領域および前記第1導電型半導体堆積層よりも不純物濃度が高い第1導電型ソース領域からなる高濃度不純物領域と、
前記第1導電型半導体堆積層、前記第2導電型ウェル領域および前記第1導電型ソース領域の表面に形成されたゲート絶縁膜と、前記ゲート絶縁膜上に形成されたゲート電極と、前記ゲート電極を覆う層間絶縁膜と、
前記高濃度不純物領域に接触するよう形成されたニッケルを含む加熱反応層と、前記加熱反応層上部に配設されたアルミニウムの配線導体と、
を備え、
前記高濃度不純物領域は、前記高濃度不純物領域上の前記層間絶縁膜に形成された開口部からSi原子がイオン注入されており、
前記加熱反応層の前記第1導電型半導体基板の主面が前記層間絶縁膜の下部の前記第1導電型半導体基板の主面よりも低く、前記加熱反応層と前記層間絶縁膜の間の深さ方向に側壁ギャップがあり、前記側壁ギャップが前記配線導体と接していることを特徴とする炭化珪素半導体素子。 - 第1導電型半導体基板と、前記第1導電型半導体基板に堆積された、前記第1導電型半導体基板よりも不純物濃度の低い第1導電型半導体堆積層と、
前記第1導電型半導体堆積層表面に選択的に形成された第2導電型ウェル領域と、
前記第2導電型ウェル領域表面にそれぞれ形成された前記第2導電型ウェル領域よりも不純物濃度が高い第2導電型コンタクト領域および前記第1導電型半導体堆積層よりも不純物濃度が高い第1導電型ソース領域からなる高濃度不純物領域と、
前記第1導電型半導体堆積層、前記第2導電型ウェル領域および前記第1導電型ソース領域の表面に形成されたゲート絶縁膜と、前記ゲート絶縁膜上に形成されたゲート電極と、前記ゲート電極を覆う層間絶縁膜と、
前記高濃度不純物領域に接触するよう形成されたニッケルを含む加熱反応層と、前記加熱反応層上部に配設されたアルミニウムの配線導体と、
を備え、
前記高濃度不純物領域は、前記高濃度不純物領域上の前記層間絶縁膜に形成された開口部からSi原子がイオン注入されており、
前記加熱反応層と前記層間絶縁膜の間には、前記第1導電型半導体基板の平面方向に側壁ギャップがあり、前記側壁ギャップが前記配線導体と接していることを特徴とする炭化珪素半導体素子。
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JP7006118B2 (ja) * | 2017-10-17 | 2022-01-24 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JP7120028B2 (ja) * | 2019-01-08 | 2022-08-17 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
WO2021010382A1 (ja) | 2019-07-17 | 2021-01-21 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置 |
JP7427886B2 (ja) | 2019-09-06 | 2024-02-06 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US11309438B2 (en) | 2019-12-10 | 2022-04-19 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
JP7371507B2 (ja) | 2020-01-22 | 2023-10-31 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP7547262B2 (ja) * | 2021-03-18 | 2024-09-09 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
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