SE9601176D0 - A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby - Google Patents

A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby

Info

Publication number
SE9601176D0
SE9601176D0 SE9601176A SE9601176A SE9601176D0 SE 9601176 D0 SE9601176 D0 SE 9601176D0 SE 9601176 A SE9601176 A SE 9601176A SE 9601176 A SE9601176 A SE 9601176A SE 9601176 D0 SE9601176 D0 SE 9601176D0
Authority
SE
Sweden
Prior art keywords
layer
sic
semiconductor
semiconductor layer
producing
Prior art date
Application number
SE9601176A
Other languages
English (en)
Inventor
Adolf Schoener
Kurt Rottner
Nils Nordell
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9601176A priority Critical patent/SE9601176D0/sv
Publication of SE9601176D0 publication Critical patent/SE9601176D0/sv
Priority to US08/636,969 priority patent/US5705406A/en
Priority to PCT/SE1997/000532 priority patent/WO1997036317A2/en
Priority to JP53433397A priority patent/JP4530432B2/ja
Priority to DE69735056T priority patent/DE69735056T2/de
Priority to EP97915822A priority patent/EP0890186B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thyristors (AREA)
SE9601176A 1996-03-27 1996-03-27 A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby SE9601176D0 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9601176A SE9601176D0 (sv) 1996-03-27 1996-03-27 A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby
US08/636,969 US5705406A (en) 1996-03-27 1996-04-24 Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique
PCT/SE1997/000532 WO1997036317A2 (en) 1996-03-27 1997-03-26 A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC BY THE USE OF AN IMPLANTING STEP AND A DEVICE PRODUCED THEREBY
JP53433397A JP4530432B2 (ja) 1996-03-27 1997-03-26 注入工程を使用してＳｉＣ半導体層を有する半導体デバイスを製造する方法
DE69735056T DE69735056T2 (de) 1996-03-27 1997-03-26 VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS MIT SiC-HALBLEITERSCHICHTEN MITTELS EINES IMPLANTIERUNGSSCHRITTS
EP97915822A EP0890186B1 (en) 1996-03-27 1997-03-26 A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC BY THE USE OF AN IMPLANTING STEP

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9601176A SE9601176D0 (sv) 1996-03-27 1996-03-27 A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby
US08/636,969 US5705406A (en) 1996-03-27 1996-04-24 Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique

Publications (1)

Publication Number Publication Date
SE9601176D0 true SE9601176D0 (sv) 1996-03-27

Family

ID=26662561

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9601176A SE9601176D0 (sv) 1996-03-27 1996-03-27 A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby

Country Status (3)

Country Link
US (1) US5705406A (sv)
SE (1) SE9601176D0 (sv)
WO (1) WO1997036317A2 (sv)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011279A (en) * 1997-04-30 2000-01-04 Cree Research, Inc. Silicon carbide field controlled bipolar switch
SE9701724D0 (sv) * 1997-05-09 1997-05-09 Abb Research Ltd A pn-diode of SiC and a method for production thereof
US5932894A (en) * 1997-06-26 1999-08-03 Abb Research Ltd. SiC semiconductor device comprising a pn junction
SE9901410D0 (sv) * 1999-04-21 1999-04-21 Abb Research Ltd Abipolar transistor
US7061021B2 (en) * 2003-05-01 2006-06-13 The University Of South Carolina System and method for fabricating diodes
JP4889645B2 (ja) * 2005-09-08 2012-03-07 三菱電機株式会社 半導体装置の製造方法
US7595241B2 (en) * 2006-08-23 2009-09-29 General Electric Company Method for fabricating silicon carbide vertical MOSFET devices
US7691711B2 (en) * 2008-01-31 2010-04-06 General Electric Company Method for fabricating silicon carbide vertical MOSFET devices
US7906427B2 (en) * 2008-10-14 2011-03-15 General Electric Company Dimension profiling of SiC devices
SE541290C2 (en) 2017-09-15 2019-06-11 Ascatron Ab A method for manufacturing a grid

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4775882A (en) * 1986-11-19 1988-10-04 Rockwell International Corporation Lateral bipolar transistor
JPH01109738A (ja) * 1987-10-22 1989-04-26 Nec Corp 半導体装置の製造方法
DE4009837A1 (de) * 1989-03-27 1990-10-11 Sharp Kk Verfahren zur herstellung einer halbleitereinrichtung
JPH0383332A (ja) * 1989-08-28 1991-04-09 Sharp Corp 炭化珪素半導体装置の製造方法
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
US5322802A (en) * 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
US5318915A (en) * 1993-01-25 1994-06-07 North Carolina State University At Raleigh Method for forming a p-n junction in silicon carbide
US5378642A (en) * 1993-04-19 1995-01-03 General Electric Company Method of making a silicon carbide junction field effect transistor device for high temperature applications
EP0627761B1 (en) * 1993-04-30 2001-11-21 Texas Instruments Incorporated Epitaxial overgrowth method and devices
US5510281A (en) * 1995-03-20 1996-04-23 General Electric Company Method of fabricating a self-aligned DMOS transistor device using SiC and spacers

Also Published As

Publication number Publication date
WO1997036317A3 (en) 1997-11-27
WO1997036317A2 (en) 1997-10-02
US5705406A (en) 1998-01-06

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