SE9701724D0 - A pn-diode of SiC and a method for production thereof - Google Patents

A pn-diode of SiC and a method for production thereof

Info

Publication number
SE9701724D0
SE9701724D0 SE9701724A SE9701724A SE9701724D0 SE 9701724 D0 SE9701724 D0 SE 9701724D0 SE 9701724 A SE9701724 A SE 9701724A SE 9701724 A SE9701724 A SE 9701724A SE 9701724 D0 SE9701724 D0 SE 9701724D0
Authority
SE
Sweden
Prior art keywords
drift layer
portions
junction
grid
sic
Prior art date
Application number
SE9701724A
Other languages
English (en)
Inventor
Kurt Rottner
Adolf Schoener
Mietek Bakowski
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9701724A priority Critical patent/SE9701724D0/sv
Publication of SE9701724D0 publication Critical patent/SE9701724D0/sv
Priority to US08/859,844 priority patent/US5902117A/en
Priority to JP54910798A priority patent/JP2001525990A/ja
Priority to EP98904481A priority patent/EP0980589A1/en
Priority to PCT/SE1998/000239 priority patent/WO1998052232A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
SE9701724A 1997-05-09 1997-05-09 A pn-diode of SiC and a method for production thereof SE9701724D0 (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE9701724A SE9701724D0 (sv) 1997-05-09 1997-05-09 A pn-diode of SiC and a method for production thereof
US08/859,844 US5902117A (en) 1997-05-09 1997-05-21 PN-diode of SiC and a method for production thereof
JP54910798A JP2001525990A (ja) 1997-05-09 1998-02-12 ＳｉＣからなるｐｎ型ダイオードおよびその製造方法
EP98904481A EP0980589A1 (en) 1997-05-09 1998-02-12 A PN-DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF
PCT/SE1998/000239 WO1998052232A1 (en) 1997-05-09 1998-02-12 A PN-DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9701724A SE9701724D0 (sv) 1997-05-09 1997-05-09 A pn-diode of SiC and a method for production thereof
US08/859,844 US5902117A (en) 1997-05-09 1997-05-21 PN-diode of SiC and a method for production thereof

Publications (1)

Publication Number Publication Date
SE9701724D0 true SE9701724D0 (sv) 1997-05-09

Family

ID=26662982

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9701724A SE9701724D0 (sv) 1997-05-09 1997-05-09 A pn-diode of SiC and a method for production thereof

Country Status (3)

Country Link
US (1) US5902117A (sv)
SE (1) SE9701724D0 (sv)
WO (1) WO1998052232A1 (sv)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6524900B2 (en) * 2001-07-25 2003-02-25 Abb Research, Ltd Method concerning a junction barrier Schottky diode, such a diode and use thereof
US6791161B2 (en) * 2002-04-08 2004-09-14 Fabtech, Inc. Precision Zener diodes
DE102005011702A1 (de) * 2004-03-11 2005-09-29 Siced Electronics Development Gmbh & Co. Kg Halbleiterbauelement, insbesondere Diode, und zugehöriges Herstellungsverfahren
EP1723680A1 (de) * 2004-03-11 2006-11-22 Siemens Aktiengesellschaft Pn-diode auf der basis von siliciumcarbid und verfahren zu deren herstellung
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
JP5061506B2 (ja) * 2006-06-05 2012-10-31 富士電機株式会社 炭化珪素半導体装置の製造方法
DE102007024461B4 (de) 2007-05-25 2012-10-11 Infineon Technologies Austria Ag Halbleiterelement und Verfahren zu seiner Herstellung
JP6029397B2 (ja) * 2012-09-14 2016-11-24 三菱電機株式会社 炭化珪素半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4153904A (en) * 1977-10-03 1979-05-08 Texas Instruments Incorporated Semiconductor device having a high breakdown voltage junction characteristic
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
US4771011A (en) * 1984-05-09 1988-09-13 Analog Devices, Incorporated Ion-implanted process for forming IC wafer with buried-Zener diode and IC structure made with such process
US5318915A (en) * 1993-01-25 1994-06-07 North Carolina State University At Raleigh Method for forming a p-n junction in silicon carbide
DE4405815A1 (de) * 1993-02-24 1994-08-25 Samsung Electronics Co Ltd Halbleitervorrichtung mit einer Anodenschicht, die durch selektive Diffusion ausgebildete Bereiche geringerer Konzentration aufweist
SE9601175D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd A method for producing a semiconductor device by the use of an implanting step and a device produced thereby
SE9601174D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd A method for producing a semiconductor device having a semiconductor layer of SiC and such a device
SE9601176D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby
SE9602745D0 (sv) * 1996-07-11 1996-07-11 Abb Research Ltd A method for producing a channel region layer in a SiC-layer for a voltage controlled semiconductor device
US5801836A (en) * 1996-07-16 1998-09-01 Abb Research Ltd. Depletion region stopper for PN junction in silicon carbide

Also Published As

Publication number Publication date
US5902117A (en) 1999-05-11
WO1998052232A1 (en) 1998-11-19

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