SE9900358D0 - A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor - Google Patents
A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistorInfo
- Publication number
- SE9900358D0 SE9900358D0 SE9900358A SE9900358A SE9900358D0 SE 9900358 D0 SE9900358 D0 SE 9900358D0 SE 9900358 A SE9900358 A SE 9900358A SE 9900358 A SE9900358 A SE 9900358A SE 9900358 D0 SE9900358 D0 SE 9900358D0
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- transistor
- region layer
- sic
- field effect
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 108091006146 Channels Proteins 0.000 abstract 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9900358A SE9900358D0 (sv) | 1999-02-03 | 1999-02-03 | A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor |
US09/247,469 US6127695A (en) | 1999-02-03 | 1999-02-08 | Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor |
KR1020017009812A KR100629020B1 (ko) | 1999-02-03 | 2000-02-01 | SiC 측면 전계효과 트랜지스터, 그 제조 방법 및 상기 트랜지스터의 사용 방법 |
DE60044776T DE60044776D1 (de) | 1999-02-03 | 2000-02-01 | LATERALER SiC-BASIERTER FELDEFFEKTTRANSITOR, DESSEN HERSTELLUNGSVERFAHREN UND DER GEBRAUCH EINES SOLCHEN TRANSISTORS |
AU28382/00A AU2838200A (en) | 1999-02-03 | 2000-02-01 | A lateral field effect transistor of sic, a method for production thereof and a use of such a transistor |
CNB008034044A CN1146969C (zh) | 1999-02-03 | 2000-02-01 | 碳化硅横向场效应晶体管和制造方法及其使用 |
AT00906825T ATE476752T1 (de) | 1999-02-03 | 2000-02-01 | Lateraler sic-basierter feldeffekttransitor, dessen herstellungsverfahren und der gebrauch eines solchen transistors |
JP2000597836A JP5038556B2 (ja) | 1999-02-03 | 2000-02-01 | SiCのラテラル電界効果トランジスタ、その製造方法、およびかかるトランジスタの使用 |
CA2361752A CA2361752C (en) | 1999-02-03 | 2000-02-01 | A lateral field effect transistor of sic, a method for production thereof and a use of such a transistor |
EP00906825A EP1163696B1 (en) | 1999-02-03 | 2000-02-01 | A LATERAL FIELD EFFECT TRANSISTOR OF SiC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR |
PCT/SE2000/000192 WO2000046850A1 (en) | 1999-02-03 | 2000-02-01 | A LATERAL FIELD EFFECT TRANSISTOR OF SiC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR |
HK02104058.9A HK1042378B (zh) | 1999-02-03 | 2002-05-31 | 碳化硅橫向場效應晶體管和製造方法及其使用 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9900358A SE9900358D0 (sv) | 1999-02-03 | 1999-02-03 | A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor |
US09/247,469 US6127695A (en) | 1999-02-03 | 1999-02-08 | Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
SE9900358D0 true SE9900358D0 (sv) | 1999-02-03 |
Family
ID=26663492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9900358A SE9900358D0 (sv) | 1999-02-03 | 1999-02-03 | A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor |
Country Status (4)
Country | Link |
---|---|
US (1) | US6127695A (sv) |
AU (1) | AU2838200A (sv) |
SE (1) | SE9900358D0 (sv) |
WO (1) | WO2000046850A1 (sv) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001196580A (ja) * | 2000-01-12 | 2001-07-19 | Kmt Semiconductor Ltd | 電界効果トランジスタの製造方法 |
US6563150B1 (en) * | 2000-07-25 | 2003-05-13 | Alison Schary | High frequency field effect transistor |
JP4526179B2 (ja) * | 2000-11-21 | 2010-08-18 | 三菱電機株式会社 | 半導体装置 |
US7132701B1 (en) * | 2001-07-27 | 2006-11-07 | Fairchild Semiconductor Corporation | Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods |
US6620697B1 (en) * | 2001-09-24 | 2003-09-16 | Koninklijke Philips Electronics N.V. | Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same |
US6982440B2 (en) | 2002-02-19 | 2006-01-03 | Powersicel, Inc. | Silicon carbide semiconductor devices with a regrown contact layer |
US6764907B2 (en) * | 2002-02-19 | 2004-07-20 | Bart J. Van Zeghbroeck | Method of fabricating self-aligned silicon carbide semiconductor devices |
JP2004128037A (ja) * | 2002-09-30 | 2004-04-22 | Trecenti Technologies Inc | 半導体装置の製造方法 |
US6940110B2 (en) * | 2002-11-29 | 2005-09-06 | Matsushita Electric Industrial Co., Ltd. | SiC-MISFET and method for fabricating the same |
ATE536633T1 (de) * | 2003-09-05 | 2011-12-15 | Cree Sweden Ab | Verfahren und einrichtung |
US7834396B2 (en) * | 2004-09-01 | 2010-11-16 | Cree Sweden Ab | Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer |
JP5052025B2 (ja) * | 2006-03-29 | 2012-10-17 | 株式会社東芝 | 電力用半導体素子 |
US7683400B1 (en) | 2006-06-26 | 2010-03-23 | Northrop Grumman Systems Corporation | Semiconductor heterojunction devices based on SiC |
US7629616B2 (en) | 2007-02-28 | 2009-12-08 | Cree, Inc. | Silicon carbide self-aligned epitaxial MOSFET for high powered device applications |
US9917419B2 (en) * | 2016-06-26 | 2018-03-13 | Vi Systems Gmbh | Low capacitance optoelectronic device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5374843A (en) * | 1991-05-06 | 1994-12-20 | Silinconix, Inc. | Lightly-doped drain MOSFET with improved breakdown characteristics |
US5270554A (en) * | 1991-06-14 | 1993-12-14 | Cree Research, Inc. | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
US5612260A (en) * | 1992-06-05 | 1997-03-18 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
US5925895A (en) * | 1993-10-18 | 1999-07-20 | Northrop Grumman Corporation | Silicon carbide power MESFET with surface effect supressive layer |
EP0676814B1 (en) * | 1994-04-06 | 2006-03-22 | Denso Corporation | Process of producing trench semiconductor device |
US5686737A (en) * | 1994-09-16 | 1997-11-11 | Cree Research, Inc. | Self-aligned field-effect transistor for high frequency applications |
US5734180A (en) * | 1995-06-02 | 1998-03-31 | Texas Instruments Incorporated | High-performance high-voltage device structures |
US5627385A (en) * | 1995-08-28 | 1997-05-06 | Motorola, Inc. | Lateral silicon carbide transistor |
US5569937A (en) * | 1995-08-28 | 1996-10-29 | Motorola | High breakdown voltage silicon carbide transistor |
SE9601178D0 (sv) * | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A field controlled semiconductor device of SiC and a method for production thereof |
US5909039A (en) * | 1996-04-24 | 1999-06-01 | Abb Research Ltd. | Insulated gate bipolar transistor having a trench |
US5780878A (en) * | 1996-07-29 | 1998-07-14 | Motorola, Inc. | Lateral gate, vertical drift region transistor |
US5859939A (en) * | 1997-02-25 | 1999-01-12 | Mci Communications Corporation | Method and system for equalizing PMD using incremental delay switching |
US6150680A (en) * | 1998-03-05 | 2000-11-21 | Welch Allyn, Inc. | Field effect semiconductor device having dipole barrier |
-
1999
- 1999-02-03 SE SE9900358A patent/SE9900358D0/sv unknown
- 1999-02-08 US US09/247,469 patent/US6127695A/en not_active Expired - Lifetime
-
2000
- 2000-02-01 AU AU28382/00A patent/AU2838200A/en not_active Abandoned
- 2000-02-01 WO PCT/SE2000/000192 patent/WO2000046850A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
AU2838200A (en) | 2000-08-25 |
US6127695A (en) | 2000-10-03 |
WO2000046850A1 (en) | 2000-08-10 |
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