ATE375008T1 - Feldeffekttransistorstruktur und herstellungsverfahren - Google Patents

Feldeffekttransistorstruktur und herstellungsverfahren

Info

Publication number
ATE375008T1
ATE375008T1 AT02708575T AT02708575T ATE375008T1 AT E375008 T1 ATE375008 T1 AT E375008T1 AT 02708575 T AT02708575 T AT 02708575T AT 02708575 T AT02708575 T AT 02708575T AT E375008 T1 ATE375008 T1 AT E375008T1
Authority
AT
Austria
Prior art keywords
region
effect transistor
transistor structure
field effect
manufacturing
Prior art date
Application number
AT02708575T
Other languages
English (en)
Inventor
Steven Peake
Raymond Grover
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE375008T1 publication Critical patent/ATE375008T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/158—LDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
AT02708575T 2001-03-23 2002-03-20 Feldeffekttransistorstruktur und herstellungsverfahren ATE375008T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0107408.7A GB0107408D0 (en) 2001-03-23 2001-03-23 Field effect transistor structure and method of manufacture

Publications (1)

Publication Number Publication Date
ATE375008T1 true ATE375008T1 (de) 2007-10-15

Family

ID=9911482

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02708575T ATE375008T1 (de) 2001-03-23 2002-03-20 Feldeffekttransistorstruktur und herstellungsverfahren

Country Status (8)

Country Link
US (1) US6677642B2 (de)
EP (1) EP1378009B1 (de)
JP (1) JP4157963B2 (de)
KR (1) KR20030005385A (de)
AT (1) ATE375008T1 (de)
DE (1) DE60222751T2 (de)
GB (1) GB0107408D0 (de)
WO (1) WO2002078091A2 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6621138B1 (en) * 2002-10-21 2003-09-16 Micrel, Inc. Zener-like trim device in polysilicon
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
DE10345347A1 (de) * 2003-09-19 2005-04-14 Atmel Germany Gmbh Verfahren zur Herstellung eines DMOS-Transistors mit lateralem Driftregionen-Dotierstoffprofil
SE0302810D0 (sv) * 2003-10-24 2003-10-24 Infineon Technologies Ag Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
JP4821090B2 (ja) * 2004-03-23 2011-11-24 セイコーエプソン株式会社 半導体装置の製造方法
JP4618629B2 (ja) 2004-04-21 2011-01-26 三菱電機株式会社 誘電体分離型半導体装置
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US7709269B2 (en) * 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en) * 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
DE102006023429B4 (de) * 2006-05-18 2011-03-10 Infineon Technologies Ag ESD-Schutz-Element zur Verwendung in einem elektrischen Schaltkreis
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
US8283699B2 (en) 2006-11-13 2012-10-09 Cree, Inc. GaN based HEMTs with buried field plates
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
KR100848245B1 (ko) * 2007-06-25 2008-07-24 주식회사 동부하이텍 반도체 소자 및 그 제조방법
JP5206028B2 (ja) * 2008-03-03 2013-06-12 株式会社デンソー 半導体装置
US20100117153A1 (en) * 2008-11-07 2010-05-13 Honeywell International Inc. High voltage soi cmos device and method of manufacture
JP5748353B2 (ja) * 2011-05-13 2015-07-15 株式会社豊田中央研究所 横型半導体装置
JP5700027B2 (ja) * 2012-12-07 2015-04-15 トヨタ自動車株式会社 半導体装置
JP6221284B2 (ja) * 2013-03-19 2017-11-01 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
CN103325835B (zh) * 2013-05-28 2015-10-21 电子科技大学 一种具有结型场板的soi功率ldmos器件
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9236449B2 (en) * 2013-07-11 2016-01-12 Globalfoundries Inc. High voltage laterally diffused metal oxide semiconductor
US9093568B1 (en) * 2014-04-16 2015-07-28 Infineon Technologies Ag Semiconductor diode
CN104183646A (zh) * 2014-08-29 2014-12-03 电子科技大学 一种具有延伸栅结构的soi ldmos器件
CN104681621B (zh) 2015-02-15 2017-10-24 上海华虹宏力半导体制造有限公司 一种源极抬高电压使用的高压ldmos及其制造方法
CN105590960B (zh) * 2015-12-28 2018-11-23 电子科技大学 横向绝缘栅双极型晶体管
CN107680996A (zh) * 2017-09-14 2018-02-09 电子科技大学 横向功率器件
US10937872B1 (en) * 2019-08-07 2021-03-02 Vanguard International Semiconductor Corporation Semiconductor structures
DE102019216138A1 (de) * 2019-10-21 2021-04-22 Robert Bosch Gmbh Vertikaler feldeffekttransistor und verfahren zum ausbilden desselben
CN111725071B (zh) * 2020-07-20 2021-06-18 西安电子科技大学 一种硅基结型积累层和缓冲层横向双扩散场效应晶体管及其制作方法
CN112466955B (zh) * 2020-12-04 2022-10-11 重庆邮电大学 一种具有体内导电沟道的薄层soi-ldmos器件
KR102363450B1 (ko) * 2020-12-22 2022-02-15 (주) 트리노테크놀로지 클램핑 다이오드 및 클램핑 전압을 일정하게 유지하는 종단 구조
CN116092944A (zh) * 2023-02-28 2023-05-09 绍兴中芯集成电路制造股份有限公司 一种nldmos管及其制备方法
CN116364782B (zh) * 2023-04-27 2024-09-20 深圳市优恩半导体有限公司 栅极过压保护的芯片晶体管结构与制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4810664A (en) * 1986-08-14 1989-03-07 Hewlett-Packard Company Method for making patterned implanted buried oxide transistors and structures
US4922327A (en) * 1987-12-24 1990-05-01 University Of Toronto Innovations Foundation Semiconductor LDMOS device with upper and lower passages
DE69209678T2 (de) 1991-02-01 1996-10-10 Philips Electronics Nv Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung
US5246870A (en) 1991-02-01 1993-09-21 North American Philips Corporation Method for making an improved high voltage thin film transistor having a linear doping profile
JP2906749B2 (ja) * 1991-07-11 1999-06-21 日産自動車株式会社 半導体装置のゲート保護装置
EP0537684B1 (de) * 1991-10-15 1998-05-20 Texas Instruments Incorporated Lateraler doppel-diffundierter MOS-Transistor und Verfahren zu seiner Herstellung
JPH07326743A (ja) * 1994-05-31 1995-12-12 Fuji Electric Co Ltd プレーナ型半導体素子
KR100225411B1 (ko) * 1997-03-24 1999-10-15 김덕중 LDMOS(a lateral double-diffused MOS) 트랜지스터 소자 및 그의 제조 방법
JP3315356B2 (ja) * 1997-10-15 2002-08-19 株式会社東芝 高耐圧半導体装置
KR100275758B1 (ko) * 1998-12-17 2001-02-01 김덕중 제너 다이오드를 내장한 수평형 모스 게이트형 반도체 소자 및그 제조 방법

Also Published As

Publication number Publication date
JP4157963B2 (ja) 2008-10-01
KR20030005385A (ko) 2003-01-17
WO2002078091A2 (en) 2002-10-03
US6677642B2 (en) 2004-01-13
GB0107408D0 (en) 2001-05-16
DE60222751T2 (de) 2008-07-17
DE60222751D1 (de) 2007-11-15
EP1378009A2 (de) 2004-01-07
JP2004519862A (ja) 2004-07-02
WO2002078091A3 (en) 2003-05-30
US20020137318A1 (en) 2002-09-26
EP1378009B1 (de) 2007-10-03

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