FR2387514A1 - Dispositif semi-conducteur et son procede de fabrication - Google Patents

Dispositif semi-conducteur et son procede de fabrication

Info

Publication number
FR2387514A1
FR2387514A1 FR7810775A FR7810775A FR2387514A1 FR 2387514 A1 FR2387514 A1 FR 2387514A1 FR 7810775 A FR7810775 A FR 7810775A FR 7810775 A FR7810775 A FR 7810775A FR 2387514 A1 FR2387514 A1 FR 2387514A1
Authority
FR
France
Prior art keywords
film
deposited
iii
semiconductor device
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7810775A
Other languages
English (en)
Other versions
FR2387514B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2387514A1 publication Critical patent/FR2387514A1/fr
Application granted granted Critical
Publication of FR2387514B1 publication Critical patent/FR2387514B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Procédé pour la réalisation d'un dispositif semi-conducteur présentant un corps constitué en un composé III-V. Un film constitué par l'un des éléments Sn, Ge, Si, Be, Mn ou Mg est déposé par un processus d'épitaxie à faisceau moléculaire sur la surface dénudée du corps en un composé III-V. Une couche en un composé III-V dopé avec l'élément formant le film est déposée sur le film, par exemple pour la réalisation d'un transistor à effet de champ. Une couche de contact ohmique est déposée sur le film afin de réaliser un contact ohmique. Application Transistor FET.
FR7810775A 1977-04-13 1978-04-12 Dispositif semi-conducteur et son procede de fabrication Granted FR2387514A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB15291/77A GB1574525A (en) 1977-04-13 1977-04-13 Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method

Publications (2)

Publication Number Publication Date
FR2387514A1 true FR2387514A1 (fr) 1978-11-10
FR2387514B1 FR2387514B1 (fr) 1982-09-17

Family

ID=10056459

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7810775A Granted FR2387514A1 (fr) 1977-04-13 1978-04-12 Dispositif semi-conducteur et son procede de fabrication

Country Status (7)

Country Link
US (1) US4218271A (fr)
JP (1) JPS53128273A (fr)
CA (1) CA1097431A (fr)
DE (1) DE2814245C2 (fr)
FR (1) FR2387514A1 (fr)
GB (1) GB1574525A (fr)
IT (1) IT1096105B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0027903A1 (fr) * 1979-10-26 1981-05-06 International Business Machines Corporation Procédé de fabrication d'un dispositif à barrière redresseuse Schottky sur un semiconducteur en GaAs
EP0037401A1 (fr) * 1979-09-27 1981-10-14 Western Electric Co CONTACT OHMIQUE DANS UN SEMI-CONDUCTEUR InP OU InGaAsP DU TYPE P.
EP0200059A2 (fr) * 1985-04-23 1986-11-05 International Business Machines Corporation Procédé pour la formation d'un contact ohmique sur un semi-conducteur composé III-V et produit de fabrication semi-conducteur intermédiaire

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0031180A3 (fr) * 1979-12-19 1983-07-20 Philips Electronics Uk Limited Procédé de croissance d'une couche d'un composé III-V dopé par épitaxie par faisceau moléculaire et dispositif semiconducteur comportant un substrat semiconducteur muni d'une couche épitaxiale d'un composé III-V dopé déposé par ce procédé
US4398963A (en) * 1980-11-19 1983-08-16 The United States Of America As Represented By The Secretary Of The Navy Method for making non-alloyed heterojunction ohmic contacts
US4447276A (en) * 1981-06-15 1984-05-08 The Post Office Molecular beam epitaxy electrolytic dopant source
US4385946A (en) * 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity
JPS58188128A (ja) * 1982-04-27 1983-11-02 Fujitsu Ltd 分子線結晶成長方法
DE3318683C1 (de) * 1983-05-21 1984-12-13 Telefunken electronic GmbH, 7100 Heilbronn Legierter Kontakt für n-leitendes GaAlAs-Halbleitermaterial
US4634474A (en) * 1984-10-09 1987-01-06 At&T Bell Laboratories Coating of III-V and II-VI compound semiconductors
JP2659714B2 (ja) * 1987-07-21 1997-09-30 株式会社日立製作所 半導体集積回路装置
US4952527A (en) * 1988-02-19 1990-08-28 Massachusetts Institute Of Technology Method of making buffer layers for III-V devices using solid phase epitaxy
US5164040A (en) * 1989-08-21 1992-11-17 Martin Marietta Energy Systems, Inc. Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets
JPH10341039A (ja) * 1997-04-10 1998-12-22 Toshiba Corp 半導体発光素子およびその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1270550A (en) * 1968-12-27 1972-04-12 Western Electric Co Improvements in or relating to epitaxial film formation
FR2130697A1 (fr) * 1971-03-25 1972-11-03 Western Electric Co
US3839084A (en) * 1972-11-29 1974-10-01 Bell Telephone Labor Inc Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
FR2234660A1 (fr) * 1973-06-25 1975-01-17 Western Electric Co
US3941624A (en) * 1975-03-28 1976-03-02 Bell Telephone Laboratories, Incorporated Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3386867A (en) * 1965-09-22 1968-06-04 Ibm Method for providing electrical contacts to a wafer of gaas
US3863334A (en) * 1971-03-08 1975-02-04 Motorola Inc Aluminum-zinc metallization
FR2230078B1 (fr) * 1973-05-18 1977-07-29 Radiotechnique Compelec

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1270550A (en) * 1968-12-27 1972-04-12 Western Electric Co Improvements in or relating to epitaxial film formation
FR2130697A1 (fr) * 1971-03-25 1972-11-03 Western Electric Co
US3839084A (en) * 1972-11-29 1974-10-01 Bell Telephone Labor Inc Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
FR2234660A1 (fr) * 1973-06-25 1975-01-17 Western Electric Co
US3941624A (en) * 1975-03-28 1976-03-02 Bell Telephone Laboratories, Incorporated Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
EXBK/66 *
EXBK/71 *
EXBK/73 *
EXBK/75 *
EXBK/77 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0037401A1 (fr) * 1979-09-27 1981-10-14 Western Electric Co CONTACT OHMIQUE DANS UN SEMI-CONDUCTEUR InP OU InGaAsP DU TYPE P.
EP0037401A4 (fr) * 1979-09-27 1983-07-26 Western Electric Co CONTACT OHMIQUE DANS UN SEMI-CONDUCTEUR InP OU InGaAsP DU TYPE P.
EP0027903A1 (fr) * 1979-10-26 1981-05-06 International Business Machines Corporation Procédé de fabrication d'un dispositif à barrière redresseuse Schottky sur un semiconducteur en GaAs
EP0200059A2 (fr) * 1985-04-23 1986-11-05 International Business Machines Corporation Procédé pour la formation d'un contact ohmique sur un semi-conducteur composé III-V et produit de fabrication semi-conducteur intermédiaire
EP0200059A3 (en) * 1985-04-23 1989-02-22 International Business Machines Corporation A method of forming an ohmic contact to a group iii-v semiconductor and a semiconductor intermediate manufacturing product

Also Published As

Publication number Publication date
DE2814245A1 (de) 1978-10-26
FR2387514B1 (fr) 1982-09-17
IT1096105B (it) 1985-08-17
JPS5628373B2 (fr) 1981-07-01
JPS53128273A (en) 1978-11-09
US4218271A (en) 1980-08-19
IT7822167A0 (it) 1978-04-10
GB1574525A (en) 1980-09-10
CA1097431A (fr) 1981-03-10
DE2814245C2 (de) 1985-01-17

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