ES550464A0 - Un metodo para formar un contacto ohmico - Google Patents
Un metodo para formar un contacto ohmicoInfo
- Publication number
- ES550464A0 ES550464A0 ES550464A ES550464A ES550464A0 ES 550464 A0 ES550464 A0 ES 550464A0 ES 550464 A ES550464 A ES 550464A ES 550464 A ES550464 A ES 550464A ES 550464 A0 ES550464 A0 ES 550464A0
- Authority
- ES
- Spain
- Prior art keywords
- layer
- ohmic contact
- elements
- forming
- angstroms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052755 nonmetal Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
- Photovoltaic Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/687,092 US4680611A (en) | 1984-12-28 | 1984-12-28 | Multilayer ohmic contact for p-type semiconductor and method of making same |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8800785A1 ES8800785A1 (es) | 1987-11-16 |
ES550464A0 true ES550464A0 (es) | 1987-11-16 |
Family
ID=24759001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES550464A Expired ES8800785A1 (es) | 1984-12-28 | 1985-12-27 | Un metodo para formar un contacto ohmico |
Country Status (9)
Country | Link |
---|---|
US (1) | US4680611A (es) |
EP (1) | EP0186350B1 (es) |
JP (1) | JPS61222180A (es) |
AT (1) | ATE56105T1 (es) |
AU (2) | AU581946B2 (es) |
CA (1) | CA1236224A (es) |
DE (1) | DE3579429D1 (es) |
ES (1) | ES8800785A1 (es) |
ZA (1) | ZA859821B (es) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4735662A (en) * | 1987-01-06 | 1988-04-05 | The Standard Oil Company | Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors |
JP2659714B2 (ja) * | 1987-07-21 | 1997-09-30 | 株式会社日立製作所 | 半導体集積回路装置 |
JPH01111380A (ja) * | 1987-10-23 | 1989-04-28 | Sumitomo Metal Ind Ltd | 光起電力素子及びその製造方法 |
US5393675A (en) * | 1993-05-10 | 1995-02-28 | The University Of Toledo | Process for RF sputtering of cadmium telluride photovoltaic cell |
US5557146A (en) * | 1993-07-14 | 1996-09-17 | University Of South Florida | Ohmic contact using binder paste with semiconductor material dispersed therein |
US5909632A (en) * | 1997-09-25 | 1999-06-01 | Midwest Research Institute | Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films |
DE112009000498T5 (de) * | 2008-03-07 | 2011-02-24 | National University Corporation Tohoku University, Sendai | Photoelektrische Wandlerelementstruktur und Solarzelle |
US8524524B2 (en) * | 2010-04-22 | 2013-09-03 | General Electric Company | Methods for forming back contact electrodes for cadmium telluride photovoltaic cells |
US20110272010A1 (en) * | 2010-05-10 | 2011-11-10 | International Business Machines Corporation | High work function metal interfacial films for improving fill factor in solar cells |
WO2017091269A2 (en) * | 2015-08-31 | 2017-06-01 | The Board Of Regents Of The University Of Oklahoma | Semiconductor devices having matrix-embedded nano-structured materials |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3370207A (en) * | 1964-02-24 | 1968-02-20 | Gen Electric | Multilayer contact system for semiconductor devices including gold and copper layers |
US3268309A (en) * | 1964-03-30 | 1966-08-23 | Gen Electric | Semiconductor contact means |
US3465428A (en) * | 1966-10-27 | 1969-09-09 | Trw Inc | Method of fabricating semiconductor devices and the like |
US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
US4000508A (en) * | 1975-07-17 | 1976-12-28 | Honeywell Inc. | Ohmic contacts to p-type mercury cadmium telluride |
JPS5237785A (en) * | 1975-09-20 | 1977-03-23 | Agency Of Ind Science & Technol | Process for production of photovoltaic elements |
JPS5356988A (en) * | 1976-11-04 | 1978-05-23 | Agency Of Ind Science & Technol | Photovoltaic element |
JPS5454589A (en) * | 1977-10-11 | 1979-04-28 | Agency Of Ind Science & Technol | Photoelectric transducer and production of the same |
US4319069A (en) * | 1980-07-25 | 1982-03-09 | Eastman Kodak Company | Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation |
JPS6033793B2 (ja) * | 1981-01-19 | 1985-08-05 | 株式会社村田製作所 | 銅被膜を有するセラミツク体 |
JPS57126101A (en) * | 1981-01-29 | 1982-08-05 | Murata Manufacturing Co | Method of forming electrode for barium titanate series semiconductor porcelain |
US4388483A (en) * | 1981-09-08 | 1983-06-14 | Monosolar, Inc. | Thin film heterojunction photovoltaic cells and methods of making the same |
JPS5931041A (ja) * | 1982-08-13 | 1984-02-18 | Seiko Epson Corp | 薄膜半導体装置 |
US4456630A (en) * | 1983-08-18 | 1984-06-26 | Monosolar, Inc. | Method of forming ohmic contacts |
JPH1151A (ja) * | 1997-06-11 | 1999-01-06 | Takashi Osawa | ゲルマニウムミネラルを含んだ野菜を作る 土壌改良植成剤 |
-
1984
- 1984-12-28 US US06/687,092 patent/US4680611A/en not_active Expired - Lifetime
-
1985
- 1985-12-05 DE DE8585308872T patent/DE3579429D1/de not_active Expired - Lifetime
- 1985-12-05 EP EP85308872A patent/EP0186350B1/en not_active Expired - Lifetime
- 1985-12-05 AT AT85308872T patent/ATE56105T1/de not_active IP Right Cessation
- 1985-12-06 AU AU50851/85A patent/AU581946B2/en not_active Ceased
- 1985-12-17 CA CA000497874A patent/CA1236224A/en not_active Expired
- 1985-12-23 ZA ZA859821A patent/ZA859821B/xx unknown
- 1985-12-25 JP JP60299664A patent/JPS61222180A/ja active Pending
- 1985-12-27 ES ES550464A patent/ES8800785A1/es not_active Expired
-
1989
- 1989-05-04 AU AU34045/89A patent/AU608154B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
DE3579429D1 (de) | 1990-10-04 |
US4680611A (en) | 1987-07-14 |
ATE56105T1 (de) | 1990-09-15 |
AU5085185A (en) | 1986-07-03 |
CA1236224A (en) | 1988-05-03 |
EP0186350A2 (en) | 1986-07-02 |
EP0186350A3 (en) | 1988-01-20 |
ES8800785A1 (es) | 1987-11-16 |
EP0186350B1 (en) | 1990-08-29 |
AU581946B2 (en) | 1989-03-09 |
JPS61222180A (ja) | 1986-10-02 |
ZA859821B (en) | 1986-09-24 |
AU3404589A (en) | 1989-08-31 |
AU608154B2 (en) | 1991-03-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19981001 |