ES8800785A1 - Un metodo para formar un contacto ohmico - Google Patents
Un metodo para formar un contacto ohmicoInfo
- Publication number
- ES8800785A1 ES8800785A1 ES550464A ES550464A ES8800785A1 ES 8800785 A1 ES8800785 A1 ES 8800785A1 ES 550464 A ES550464 A ES 550464A ES 550464 A ES550464 A ES 550464A ES 8800785 A1 ES8800785 A1 ES 8800785A1
- Authority
- ES
- Spain
- Prior art keywords
- type semiconductor
- ohmic contact
- layer
- making same
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052755 nonmetal Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
- Photovoltaic Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
METODO PARA LA FORMACION DE UN CONTACTO OHMICO, CON UNA PELICULA DELGADA DE UN COMPUESTO SEMICONDUCTOR DE TIPO P. COMPRENDE LAS OPERACIONES DE ATACAR QUIMICAMENTE LA SUPERFICIE DE DICHA PELICULA CON UNA SOLUCION ACIDA PARA FORMAR UNA SUPERFICIE RICA EN ELEMENTOS NO METALICOS; DE TRATAR LA SUPERFICIE DE LA PELICULA ATACADA CON ACIDO CON UNA SOLUCION BASICA FUERTE; DE DEPOSITAR SOBRE DICHA SUPERFICIE ATACADA Y TRATADA UNA CAPA METALICA DE COBRE QUE TIENEN UN ESPESOR DE CAPA DE APROXIMADAMENTE 5 D 10C1 NANOMETROS A APROXIMADAMENTE 5 NANOMETROS; Y DE DEPOSITAR SOBRE DICHA CAPA DE COBRE UNA SEGUNDA CAPA DE AL MENOS UN SEGUNDO METAL CONDUCTOR. DE APLICACION EN DISPOSITIVOS FOTOVOLTAICOS DE PELICULA DELGADA.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/687,092 US4680611A (en) | 1984-12-28 | 1984-12-28 | Multilayer ohmic contact for p-type semiconductor and method of making same |
Publications (2)
Publication Number | Publication Date |
---|---|
ES550464A0 ES550464A0 (es) | 1987-11-16 |
ES8800785A1 true ES8800785A1 (es) | 1987-11-16 |
Family
ID=24759001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES550464A Expired ES8800785A1 (es) | 1984-12-28 | 1985-12-27 | Un metodo para formar un contacto ohmico |
Country Status (9)
Country | Link |
---|---|
US (1) | US4680611A (es) |
EP (1) | EP0186350B1 (es) |
JP (1) | JPS61222180A (es) |
AT (1) | ATE56105T1 (es) |
AU (2) | AU581946B2 (es) |
CA (1) | CA1236224A (es) |
DE (1) | DE3579429D1 (es) |
ES (1) | ES8800785A1 (es) |
ZA (1) | ZA859821B (es) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4735662A (en) * | 1987-01-06 | 1988-04-05 | The Standard Oil Company | Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors |
JP2659714B2 (ja) * | 1987-07-21 | 1997-09-30 | 株式会社日立製作所 | 半導体集積回路装置 |
JPH01111380A (ja) * | 1987-10-23 | 1989-04-28 | Sumitomo Metal Ind Ltd | 光起電力素子及びその製造方法 |
US5393675A (en) * | 1993-05-10 | 1995-02-28 | The University Of Toledo | Process for RF sputtering of cadmium telluride photovoltaic cell |
US5557146A (en) * | 1993-07-14 | 1996-09-17 | University Of South Florida | Ohmic contact using binder paste with semiconductor material dispersed therein |
US5909632A (en) * | 1997-09-25 | 1999-06-01 | Midwest Research Institute | Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films |
WO2009110403A1 (ja) * | 2008-03-07 | 2009-09-11 | 国立大学法人東北大学 | 光電変換素子構造及び太陽電池 |
US8524524B2 (en) * | 2010-04-22 | 2013-09-03 | General Electric Company | Methods for forming back contact electrodes for cadmium telluride photovoltaic cells |
US20110272010A1 (en) * | 2010-05-10 | 2011-11-10 | International Business Machines Corporation | High work function metal interfacial films for improving fill factor in solar cells |
WO2017091269A2 (en) * | 2015-08-31 | 2017-06-01 | The Board Of Regents Of The University Of Oklahoma | Semiconductor devices having matrix-embedded nano-structured materials |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3370207A (en) * | 1964-02-24 | 1968-02-20 | Gen Electric | Multilayer contact system for semiconductor devices including gold and copper layers |
US3268309A (en) * | 1964-03-30 | 1966-08-23 | Gen Electric | Semiconductor contact means |
US3465428A (en) * | 1966-10-27 | 1969-09-09 | Trw Inc | Method of fabricating semiconductor devices and the like |
US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
US4000508A (en) * | 1975-07-17 | 1976-12-28 | Honeywell Inc. | Ohmic contacts to p-type mercury cadmium telluride |
JPS5237785A (en) * | 1975-09-20 | 1977-03-23 | Agency Of Ind Science & Technol | Process for production of photovoltaic elements |
JPS5356988A (en) * | 1976-11-04 | 1978-05-23 | Agency Of Ind Science & Technol | Photovoltaic element |
JPS5454589A (en) * | 1977-10-11 | 1979-04-28 | Agency Of Ind Science & Technol | Photoelectric transducer and production of the same |
US4319069A (en) * | 1980-07-25 | 1982-03-09 | Eastman Kodak Company | Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation |
JPS6033793B2 (ja) * | 1981-01-19 | 1985-08-05 | 株式会社村田製作所 | 銅被膜を有するセラミツク体 |
JPS57126101A (en) * | 1981-01-29 | 1982-08-05 | Murata Manufacturing Co | Method of forming electrode for barium titanate series semiconductor porcelain |
US4388483A (en) * | 1981-09-08 | 1983-06-14 | Monosolar, Inc. | Thin film heterojunction photovoltaic cells and methods of making the same |
JPS5931041A (ja) * | 1982-08-13 | 1984-02-18 | Seiko Epson Corp | 薄膜半導体装置 |
US4456630A (en) * | 1983-08-18 | 1984-06-26 | Monosolar, Inc. | Method of forming ohmic contacts |
JPH1151A (ja) * | 1997-06-11 | 1999-01-06 | Takashi Osawa | ゲルマニウムミネラルを含んだ野菜を作る 土壌改良植成剤 |
-
1984
- 1984-12-28 US US06/687,092 patent/US4680611A/en not_active Expired - Lifetime
-
1985
- 1985-12-05 EP EP85308872A patent/EP0186350B1/en not_active Expired - Lifetime
- 1985-12-05 DE DE8585308872T patent/DE3579429D1/de not_active Expired - Lifetime
- 1985-12-05 AT AT85308872T patent/ATE56105T1/de not_active IP Right Cessation
- 1985-12-06 AU AU50851/85A patent/AU581946B2/en not_active Ceased
- 1985-12-17 CA CA000497874A patent/CA1236224A/en not_active Expired
- 1985-12-23 ZA ZA859821A patent/ZA859821B/xx unknown
- 1985-12-25 JP JP60299664A patent/JPS61222180A/ja active Pending
- 1985-12-27 ES ES550464A patent/ES8800785A1/es not_active Expired
-
1989
- 1989-05-04 AU AU34045/89A patent/AU608154B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
ATE56105T1 (de) | 1990-09-15 |
AU5085185A (en) | 1986-07-03 |
EP0186350A3 (en) | 1988-01-20 |
ZA859821B (en) | 1986-09-24 |
ES550464A0 (es) | 1987-11-16 |
AU608154B2 (en) | 1991-03-21 |
AU3404589A (en) | 1989-08-31 |
EP0186350A2 (en) | 1986-07-02 |
US4680611A (en) | 1987-07-14 |
DE3579429D1 (de) | 1990-10-04 |
CA1236224A (en) | 1988-05-03 |
AU581946B2 (en) | 1989-03-09 |
JPS61222180A (ja) | 1986-10-02 |
EP0186350B1 (en) | 1990-08-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19981001 |