DE3478171D1 - A method of producing a layered structure - Google Patents

A method of producing a layered structure

Info

Publication number
DE3478171D1
DE3478171D1 DE8484303936T DE3478171T DE3478171D1 DE 3478171 D1 DE3478171 D1 DE 3478171D1 DE 8484303936 T DE8484303936 T DE 8484303936T DE 3478171 T DE3478171 T DE 3478171T DE 3478171 D1 DE3478171 D1 DE 3478171D1
Authority
DE
Germany
Prior art keywords
metal layer
layer
layered structure
etching
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484303936T
Other languages
German (de)
Inventor
Stephen James Rhodes
Raymond Edward Oakley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Semiconductors Ltd
Original Assignee
Plessey Overseas Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Overseas Ltd filed Critical Plessey Overseas Ltd
Application granted granted Critical
Publication of DE3478171D1 publication Critical patent/DE3478171D1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of forming a layered structure, which method comprises depositing in superposition on a substrate, a first metal layer, a barrier layer and a second metal layer, etching the first and second metal layers and the barrier layer in accordance with a first masking pattern, etching the second metal layer in accordance with a second masking pattern, depositing a dielectric layer, etching the dielectric layer to expose the second metal layer, and depositing a further metal layer to contact the exposed second metal layer.
DE8484303936T 1983-06-16 1984-06-11 A method of producing a layered structure Expired DE3478171D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB838316476A GB8316476D0 (en) 1983-06-16 1983-06-16 Producing layered structure

Publications (1)

Publication Number Publication Date
DE3478171D1 true DE3478171D1 (en) 1989-06-15

Family

ID=10544350

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484303936T Expired DE3478171D1 (en) 1983-06-16 1984-06-11 A method of producing a layered structure

Country Status (6)

Country Link
US (1) US4536951A (en)
EP (1) EP0129389B1 (en)
JP (1) JPS6057650A (en)
AT (1) ATE43028T1 (en)
DE (1) DE3478171D1 (en)
GB (1) GB8316476D0 (en)

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GB8316477D0 (en) * 1983-06-16 1983-07-20 Plessey Co Plc Producing layered structure
US4670091A (en) * 1984-08-23 1987-06-02 Fairchild Semiconductor Corporation Process for forming vias on integrated circuits
EP0175604B1 (en) * 1984-08-23 1989-07-19 Fairchild Semiconductor Corporation A process for forming vias on integrated circuits
IT1213261B (en) * 1984-12-20 1989-12-14 Sgs Thomson Microelectronics SEMICONDUCTOR DEVICE WITH METALLISATION WITH MORE THICKNESS AND PROCEDURE FOR ITS MANUFACTURE.
JPS61258453A (en) * 1985-05-13 1986-11-15 Toshiba Corp Manufacture of semiconductor device
GB8518231D0 (en) * 1985-07-19 1985-08-29 Plessey Co Plc Producing layered structures
US4954423A (en) * 1985-08-06 1990-09-04 Texas Instruments Incorporated Planar metal interconnection for a VLSI device
JPS6269642A (en) * 1985-09-24 1987-03-30 Toshiba Corp Manufacture of semiconductor device
US4926236A (en) * 1986-02-12 1990-05-15 General Electric Company Multilayer interconnect and method of forming same
US4786962A (en) * 1986-06-06 1988-11-22 Hewlett-Packard Company Process for fabricating multilevel metal integrated circuits and structures produced thereby
JPS62291138A (en) * 1986-06-11 1987-12-17 Toshiba Corp Semiconductor device and manufacture thereof
NL8701032A (en) * 1987-05-01 1988-12-01 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH INTERCONNECTIONS LOCATED BOTH ABOVE A SEMICONDUCTOR AREA AND ABOVE AN ISOLATING AREA THEREIN.
US4878770A (en) * 1987-09-09 1989-11-07 Analog Devices, Inc. IC chips with self-aligned thin film resistors
EP0317770A1 (en) * 1987-11-23 1989-05-31 Texas Instruments Incorporated Self aligned planar metal interconnection for a VLSI device
US5132775A (en) * 1987-12-11 1992-07-21 Texas Instruments Incorporated Methods for and products having self-aligned conductive pillars on interconnects
US5025303A (en) * 1988-02-26 1991-06-18 Texas Instruments Incorporated Product of pillar alignment and formation process
IT1225618B (en) * 1988-09-14 1990-11-22 Sgs Thomson Microelectronics FORMATION OF SUB-MICROMETRIC CONTACTS BY CONDUCTING PILLARS PREFORMED ON THE WAFER AND PLANARIZED
JPH02265243A (en) * 1989-04-05 1990-10-30 Nec Corp Multilayer wiring and its formation
EP0393635B1 (en) * 1989-04-21 1997-09-03 Nec Corporation Semiconductor device having multi-level wirings
US4933045A (en) * 1989-06-02 1990-06-12 International Business Machines Corporation Thin film multilayer laminate interconnection board assembly method
US5285099A (en) * 1992-12-15 1994-02-08 International Business Machines Corporation SiCr microfuses
JP2727909B2 (en) * 1993-03-26 1998-03-18 松下電器産業株式会社 Method of forming metal wiring
JPH06314687A (en) * 1993-04-30 1994-11-08 Sony Corp Semiconductor device of multilayer interconnection structure and its manufacture
KR0134108B1 (en) * 1994-06-30 1998-04-20 김주용 Fabrication method of semiconductor device
US5635423A (en) * 1994-10-11 1997-06-03 Advanced Micro Devices, Inc. Simplified dual damascene process for multi-level metallization and interconnection structure
US5512514A (en) * 1994-11-08 1996-04-30 Spider Systems, Inc. Self-aligned via and contact interconnect manufacturing method
US5736457A (en) * 1994-12-09 1998-04-07 Sematech Method of making a damascene metallization
US6191484B1 (en) * 1995-07-28 2001-02-20 Stmicroelectronics, Inc. Method of forming planarized multilevel metallization in an integrated circuit
US5593919A (en) * 1995-09-05 1997-01-14 Motorola Inc. Process for forming a semiconductor device including conductive members
US5539255A (en) * 1995-09-07 1996-07-23 International Business Machines Corporation Semiconductor structure having self-aligned interconnection metallization formed from a single layer of metal
US5693568A (en) * 1995-12-14 1997-12-02 Advanced Micro Devices, Inc. Reverse damascene via structures
US6004874A (en) * 1996-06-26 1999-12-21 Cypress Semiconductor Corporation Method for forming an interconnect
US5858254A (en) * 1997-01-28 1999-01-12 International Business Machines Corporation Multilayered circuitized substrate and method of fabrication
US6133635A (en) * 1997-06-30 2000-10-17 Philips Electronics North America Corp. Process for making self-aligned conductive via structures
US6174803B1 (en) 1998-09-16 2001-01-16 Vsli Technology Integrated circuit device interconnection techniques
US6295721B1 (en) * 1999-12-28 2001-10-02 Taiwan Semiconductor Manufacturing Company Metal fuse in copper dual damascene
US20020155693A1 (en) * 2001-04-23 2002-10-24 Chartered Semiconductor Manufacturing Ltd. Method to form self-aligned anti-via interconnects
US20030082906A1 (en) * 2001-10-30 2003-05-01 Lammert Michael D. Via formation in polymers
US7358116B2 (en) * 2002-04-29 2008-04-15 Intel Corporation Substrate conductive post formation
JP2004031439A (en) * 2002-06-21 2004-01-29 Renesas Technology Corp Semiconductor integrated circuit device and its manufacturing method
US6887395B2 (en) * 2003-02-10 2005-05-03 Intel Corporation Method of forming sub-micron-size structures over a substrate
US20090160019A1 (en) * 2007-12-20 2009-06-25 Mediatek Inc. Semiconductor capacitor
US10692759B2 (en) * 2018-07-17 2020-06-23 Applied Materials, Inc. Methods for manufacturing an interconnect structure for semiconductor devices
US10950493B1 (en) 2019-09-19 2021-03-16 International Business Machines Corporation Interconnects having air gap spacers
US11177171B2 (en) 2019-10-01 2021-11-16 International Business Machines Corporation Encapsulated top via interconnects
US11508617B2 (en) * 2019-10-24 2022-11-22 Applied Materials, Inc. Method of forming interconnect for semiconductor device
CN110993583A (en) * 2019-12-06 2020-04-10 中国科学院微电子研究所 Metallized laminate, method of manufacturing the same, and electronic device including the same
US11205591B2 (en) 2020-01-09 2021-12-21 International Business Machines Corporation Top via interconnect with self-aligned barrier layer
US11164774B2 (en) 2020-01-16 2021-11-02 International Business Machines Corporation Interconnects with spacer structure for forming air-gaps
US11257677B2 (en) 2020-01-24 2022-02-22 Applied Materials, Inc. Methods and devices for subtractive self-alignment
US11709553B2 (en) 2021-02-25 2023-07-25 International Business Machines Corporation Automated prediction of a location of an object using machine learning
US11923246B2 (en) 2021-09-15 2024-03-05 International Business Machines Corporation Via CD controllable top via structure

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4029562A (en) * 1976-04-29 1977-06-14 Ibm Corporation Forming feedthrough connections for multi-level interconnections metallurgy systems
US4289834A (en) * 1977-10-20 1981-09-15 Ibm Corporation Dense dry etched multi-level metallurgy with non-overlapped vias
CA1120611A (en) * 1978-12-29 1982-03-23 Hormazdyar M. Dalal Forming interconnections for multilevel interconnection metallurgy systems
JPS5595340A (en) * 1979-01-10 1980-07-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
JPS56130947A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
US4367119A (en) * 1980-08-18 1983-01-04 International Business Machines Corporation Planar multi-level metal process with built-in etch stop
US4392298A (en) * 1981-07-27 1983-07-12 Bell Telephone Laboratories, Incorporated Integrated circuit device connection process
JPS5967649A (en) * 1982-10-12 1984-04-17 Hitachi Ltd Manufacture of multilayer wiring

Also Published As

Publication number Publication date
JPS6057650A (en) 1985-04-03
US4536951A (en) 1985-08-27
EP0129389A2 (en) 1984-12-27
GB8316476D0 (en) 1983-07-20
EP0129389B1 (en) 1989-05-10
ATE43028T1 (en) 1989-05-15
EP0129389A3 (en) 1986-10-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PLESSEY SEMICONDUCTORS LTD., SWINDON, WILTSHIRE, G