TW343384B - Process for forming via-metal - Google Patents

Process for forming via-metal

Info

Publication number
TW343384B
TW343384B TW085107149A TW85107149A TW343384B TW 343384 B TW343384 B TW 343384B TW 085107149 A TW085107149 A TW 085107149A TW 85107149 A TW85107149 A TW 85107149A TW 343384 B TW343384 B TW 343384B
Authority
TW
Taiwan
Prior art keywords
metal
carrying
layer
sputtering
chip
Prior art date
Application number
TW085107149A
Other languages
Chinese (zh)
Inventor
Yeong-Fa Lin
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW085107149A priority Critical patent/TW343384B/en
Application granted granted Critical
Publication of TW343384B publication Critical patent/TW343384B/en

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  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

A process for forming a via-metal, which comprises: a step of carrying out a lower layer metal sputtering/mask definition on a chip formed with a component anti-covering insulative layer thereon; a step of depositing a thin thickness dielectric layer for being used as a subsequent via-metal etching stop layer; a step of carrying out via masking/etching on the thin thickness dielectric layer to form a via in communication with the lower layer metal; a step of carrying out via-metal sputtering to form a metal capable of filling up the via and covering the outer surface of the chip; a step of carrying out masking/etching on the via-metal to form a via-metal perpendicularly protruding outward only on the via position; a step of carrying out a dielectric layer deposition between the upper and lower metal layers; a step of carrying out a chemical mechanical polishing on the surface of the chip thereby exposing the upper surface of the via-metal; and a step of sputtering for forming the upper layer or other layers of metal.
TW085107149A 1996-06-14 1996-06-14 Process for forming via-metal TW343384B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085107149A TW343384B (en) 1996-06-14 1996-06-14 Process for forming via-metal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085107149A TW343384B (en) 1996-06-14 1996-06-14 Process for forming via-metal

Publications (1)

Publication Number Publication Date
TW343384B true TW343384B (en) 1998-10-21

Family

ID=58263656

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085107149A TW343384B (en) 1996-06-14 1996-06-14 Process for forming via-metal

Country Status (1)

Country Link
TW (1) TW343384B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma

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Legal Events

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