ES8608737A1 - Un dispositivo que responde a la luz que incorpora un re- flector posterior mejorado - Google Patents

Un dispositivo que responde a la luz que incorpora un re- flector posterior mejorado

Info

Publication number
ES8608737A1
ES8608737A1 ES542736A ES542736A ES8608737A1 ES 8608737 A1 ES8608737 A1 ES 8608737A1 ES 542736 A ES542736 A ES 542736A ES 542736 A ES542736 A ES 542736A ES 8608737 A1 ES8608737 A1 ES 8608737A1
Authority
ES
Spain
Prior art keywords
reflector
device incorporating
substrate
photoresponsive device
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES542736A
Other languages
English (en)
Other versions
ES542736A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES542736A0 publication Critical patent/ES542736A0/es
Publication of ES8608737A1 publication Critical patent/ES8608737A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

MODIFICACIONES EN CELULAS FOTORRESPONSIVAS. CONSISTENTES EN QUE: EL RETROFLECTOR INCLUYE UN MATERIAL REFLECTOR ALEADO, ALUMINIO Y PLATA, ALEADO CON SILICIO, EN PROPORCIONES 90%, 5% Y 5% RESPECTIVAMENTE, PARA PROMOVER LA ADHESION DEL REFLECTOR AL SUSTRATO Y AL CUERPO SEMICONDUCTOR, E INHIBIR LA DIFUSION ENTRE EL REFLECTOR Y EL CUERPO SEMICONDUCTOR; EL SUSTRATO COMPRENDE UN REVESTIMIENTO DE CAPA ELECTRICAMENTE CONDUCTORA CON UNA PELICULA AISLANTE; EL REFLECTOR SE DISPONE EN EL REVESTIMIENTO. SE UTILIZAN EN DISPOSITIVOS FOTOVOLTAICOS.
ES542736A 1984-05-02 1985-04-30 Un dispositivo que responde a la luz que incorpora un re- flector posterior mejorado Expired ES8608737A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60601384A 1984-05-02 1984-05-02

Publications (2)

Publication Number Publication Date
ES542736A0 ES542736A0 (es) 1986-06-16
ES8608737A1 true ES8608737A1 (es) 1986-06-16

Family

ID=24426140

Family Applications (1)

Application Number Title Priority Date Filing Date
ES542736A Expired ES8608737A1 (es) 1984-05-02 1985-04-30 Un dispositivo que responde a la luz que incorpora un re- flector posterior mejorado

Country Status (8)

Country Link
EP (1) EP0167231A1 (es)
JP (1) JPH0652797B2 (es)
AU (1) AU4168285A (es)
BR (1) BR8502031A (es)
ES (1) ES8608737A1 (es)
IN (1) IN163268B (es)
MX (1) MX158278A (es)
ZA (1) ZA853208B (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3502218A1 (de) * 1985-01-24 1986-07-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Fuer photovoltaische solargeneratoren verwendbare solarzelle
JP2923193B2 (ja) * 1993-12-30 1999-07-26 キヤノン株式会社 光電変換素子の製造方法
US5824566A (en) * 1995-09-26 1998-10-20 Canon Kabushiki Kaisha Method of producing a photovoltaic device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609470A (en) * 1968-02-19 1971-09-28 Ibm Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum
JPS5898985A (ja) * 1981-12-09 1983-06-13 Seiko Epson Corp 薄膜太陽電池
IL67926A (en) * 1982-03-18 1986-04-29 Energy Conversion Devices Inc Photo-voltaic device with radiation reflector means
US4416052A (en) * 1982-03-29 1983-11-22 General Dynamics, Convair Division Method of making a thin-film solar cell

Also Published As

Publication number Publication date
BR8502031A (pt) 1985-12-31
ES542736A0 (es) 1986-06-16
JPH0652797B2 (ja) 1994-07-06
MX158278A (es) 1989-01-18
JPS60240162A (ja) 1985-11-29
EP0167231A1 (en) 1986-01-08
AU4168285A (en) 1985-11-07
IN163268B (es) 1988-08-27
ZA853208B (en) 1986-03-26

Similar Documents

Publication Publication Date Title
EP0204554A3 (en) Photoconductive device containing zinc oxide transparent conductive layer
CA1252874A (en) FAILURE-INSENSITIVE THIN-FILM PHOTOVOLTAIC CELL
DE3480247D1 (en) Monolithic integrated semiconductor circuit
KR920007447B1 (en) Semiconductor memory device having an ohmic contact between an aluminium-silicon alloy metalization film ad a silicon substrate
ES8206095A1 (es) Dispositivo rectificador a base de semiconductores
IE830502L (en) Photovoltaic device with back reflector
JPS6482570A (en) Manufacture of photoelectric conversion device
KR880001182A (ko) 사전 감광 회로 물질
ES8608737A1 (es) Un dispositivo que responde a la luz que incorpora un re- flector posterior mejorado
GB1284645A (en) Then film device
JPS5548954A (en) Manufacturing of film carrier
GB1296498A (es)
JPS6486527A (en) Ccb tape carrier
EP0304929A3 (en) Semiconductor device having an electrode covered with a protective film
JPS56148848A (en) Beam lead type semiconductor device
JPS6468727A (en) Thin film transistor
CA2017080A1 (en) Semiconductor device package structure
JPS5735318A (en) Manufacture of semiconductor device
JPS5789276A (en) Photo chip element
JPS5690536A (en) Semiconductor device
JPS5739585A (en) Semiconductor radiation detector
EP0519352A3 (en) Semiconductor device provided with contact through a thick insulating film
GB9121604D0 (en) Pressure-contact type semiconductor device
JPS5739571A (en) Constant current diode
JPS57154844A (en) Semiconductor element