GB1284645A - Then film device - Google Patents
Then film deviceInfo
- Publication number
- GB1284645A GB1284645A GB4683/70A GB468370A GB1284645A GB 1284645 A GB1284645 A GB 1284645A GB 4683/70 A GB4683/70 A GB 4683/70A GB 468370 A GB468370 A GB 468370A GB 1284645 A GB1284645 A GB 1284645A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gold
- deposit
- areas
- aluminium
- jan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004411 aluminium Substances 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004593 Epoxy Substances 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 238000005299 abrasion Methods 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010285 flame spraying Methods 0.000 abstract 1
- 239000004922 lacquer Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- SIBIBHIFKSKVRR-UHFFFAOYSA-N phosphanylidynecobalt Chemical compound [Co]#P SIBIBHIFKSKVRR-UHFFFAOYSA-N 0.000 abstract 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/028—Formation of switching materials, e.g. deposition of layers by conversion of electrode material, e.g. oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
1284645 Junctionless switching elements WELWYN ELECTRIC Ltd 18 Jan 1971 [30 Jan 1970] 4683/70 Heading H1K A multiple junetionless solid-state switching device is made by the process which follows. A high-alumina ceramic substrate 1 is sensitized with a stannous solution and activated with a palladium solution to receive an electroless deposit of nickel-phosphorus or cobalt phosphorus. The deposit is polished smooth and the greater part selectively etched away to leave areas 7-10 The structure is then heated in oxygen air or other oxygen-containing atmosphere to convert the upper surface of each deposit to oxide wile leaving that part in contact with the substrate to form an electrode. A common evaporated aluminium top-surface electrode 6 is provided by masked deposition and gold is evaporated on to area 11 of the aluminium and on to areas 2, 3, 4, 5 at which the oxide has been removed by abrasion to expose the underlying alloy. Leads are attached to the gold areas by soldering. The unit is protected by epoxy lacquer. Materials for top-surface contacts include aluminium, gold and silver applied by evaporation or sputtering; flame spraying may be used; and conductive epoxy resin and fired-on conductive glazes are suitable. Ultrasonic welding may be used for lead attachment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4683/70A GB1284645A (en) | 1970-01-30 | 1970-01-30 | Then film device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4683/70A GB1284645A (en) | 1970-01-30 | 1970-01-30 | Then film device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1284645A true GB1284645A (en) | 1972-08-09 |
Family
ID=9781824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4683/70A Expired GB1284645A (en) | 1970-01-30 | 1970-01-30 | Then film device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1284645A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009005699A1 (en) * | 2007-06-29 | 2009-01-08 | Sandisk 3D, Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| US7808810B2 (en) | 2006-03-31 | 2010-10-05 | Sandisk 3D Llc | Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
| US7812404B2 (en) | 2005-05-09 | 2010-10-12 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
| US7816659B2 (en) | 2005-11-23 | 2010-10-19 | Sandisk 3D Llc | Devices having reversible resistivity-switching metal oxide or nitride layer with added metal |
| US7824956B2 (en) | 2007-06-29 | 2010-11-02 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| US7829875B2 (en) | 2006-03-31 | 2010-11-09 | Sandisk 3D Llc | Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
| US7834338B2 (en) | 2005-11-23 | 2010-11-16 | Sandisk 3D Llc | Memory cell comprising nickel-cobalt oxide switching element |
| US7846785B2 (en) | 2007-06-29 | 2010-12-07 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
| US7875871B2 (en) | 2006-03-31 | 2011-01-25 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
| US7902537B2 (en) | 2007-06-29 | 2011-03-08 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| US8233308B2 (en) | 2007-06-29 | 2012-07-31 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
-
1970
- 1970-01-30 GB GB4683/70A patent/GB1284645A/en not_active Expired
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7812404B2 (en) | 2005-05-09 | 2010-10-12 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
| US8687410B2 (en) | 2005-05-09 | 2014-04-01 | Sandisk 3D Llc | Nonvolatile memory cell comprising a diode and a resistance-switching material |
| US7816659B2 (en) | 2005-11-23 | 2010-10-19 | Sandisk 3D Llc | Devices having reversible resistivity-switching metal oxide or nitride layer with added metal |
| US7834338B2 (en) | 2005-11-23 | 2010-11-16 | Sandisk 3D Llc | Memory cell comprising nickel-cobalt oxide switching element |
| US8227787B2 (en) | 2006-03-31 | 2012-07-24 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
| US7808810B2 (en) | 2006-03-31 | 2010-10-05 | Sandisk 3D Llc | Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
| US7829875B2 (en) | 2006-03-31 | 2010-11-09 | Sandisk 3D Llc | Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
| US8592792B2 (en) | 2006-03-31 | 2013-11-26 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride |
| US7875871B2 (en) | 2006-03-31 | 2011-01-25 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
| US8173486B2 (en) | 2007-06-29 | 2012-05-08 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| US8507315B2 (en) | 2007-06-29 | 2013-08-13 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| CN101720508B (en) * | 2007-06-29 | 2012-05-23 | 桑迪士克3D公司 | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| US7902537B2 (en) | 2007-06-29 | 2011-03-08 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| US8233308B2 (en) | 2007-06-29 | 2012-07-31 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
| CN102709471A (en) * | 2007-06-29 | 2012-10-03 | 桑迪士克3D公司 | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| US8373150B2 (en) | 2007-06-29 | 2013-02-12 | Sandisk 3D, Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| WO2009005699A1 (en) * | 2007-06-29 | 2009-01-08 | Sandisk 3D, Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| US7846785B2 (en) | 2007-06-29 | 2010-12-07 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
| US7824956B2 (en) | 2007-06-29 | 2010-11-02 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| US8809114B2 (en) | 2007-06-29 | 2014-08-19 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| US8816315B2 (en) | 2007-06-29 | 2014-08-26 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
| US8913417B2 (en) | 2007-06-29 | 2014-12-16 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
| CN102709471B (en) * | 2007-06-29 | 2014-12-24 | 桑迪士克3D公司 | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1284645A (en) | Then film device | |
| GB1021359A (en) | Improved electrical connection to a semiconductor body | |
| GB1342487A (en) | Electrical connectors | |
| GB1408356A (en) | Production of electrodes | |
| JPS5548954A (en) | Manufacturing of film carrier | |
| JPS5387238A (en) | Diode matrix heat sensitive heads combined in one body | |
| FR2293405A1 (en) | ARTICLES, IN PARTICULAR WINDSHIELDS, WITH NON-CONDUCTIVE SUBSTRATE EQUIPPED WITH A TRANSPARENT AND ELECTRICALLY CONDUCTIVE METAL OXIDE LAYER | |
| GB1249479A (en) | Improvements in the production of electrical contacts on metallic films | |
| ES8608737A1 (en) | Photoresponsive device incorporating improved back reflector. | |
| JPS5567179A (en) | Luminous display device | |
| GB1416650A (en) | Method of depositing electrode leads | |
| GB991824A (en) | Improvements in or relating to methods of forming electrical connections | |
| JPS5387239A (en) | Heat sensitive heads with multiple layer wiring structure and manufacture thereof | |
| JPS5618480A (en) | Manufacture of display device | |
| JPS5265666A (en) | Semiconductor device | |
| JPS5447664A (en) | Production of head for heat sensitive recording | |
| JPS6451670A (en) | Manufacture of amorphous semiconductor device | |
| JPS57154844A (en) | Semiconductor element | |
| JPS55150246A (en) | Semiconductor device | |
| JPS5419690A (en) | Electrode of semiconductor devices | |
| JPS54146960A (en) | Semiconductor device | |
| JPS5758341A (en) | Electronic parts with multiple metallayers | |
| JPS5466343A (en) | Forming method for noble metal pattern | |
| JPS57160156A (en) | Semiconductor device | |
| JPS56148836A (en) | Forming method for back electrode of semiconductor wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |