JPS55150246A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55150246A
JPS55150246A JP5711879A JP5711879A JPS55150246A JP S55150246 A JPS55150246 A JP S55150246A JP 5711879 A JP5711879 A JP 5711879A JP 5711879 A JP5711879 A JP 5711879A JP S55150246 A JPS55150246 A JP S55150246A
Authority
JP
Japan
Prior art keywords
header
posts
metallic
wires
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5711879A
Other languages
Japanese (ja)
Inventor
Hirokazu Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5711879A priority Critical patent/JPS55150246A/en
Publication of JPS55150246A publication Critical patent/JPS55150246A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
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    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
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    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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    • H01L2224/732Location after the connecting process
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    • H01L2924/102Material of the semiconductor or solid state bodies
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    • H01L2924/10253Silicon [Si]
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    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To readily fabricate wire posts on a metallic stem header forming the posts at the intermediate when connecting the stem lead wires using wires to the semiconductor chip secured onto the header and forming the silicon plate coated with special metallic thin film on both the front and back surfaces of the posts. CONSTITUTION:When securing a silicon chip 2 on a metallic stem header 1 and connecting electrode terminals formed thereon to the stem lead wires 3 on the header with bonding wires 4, intermediate posts 5 are formed on the header between the electrodes and the lead wires 3, and the wires 4 are collected and connected thereat. In this configuration the posts 5 are formed of silicon substrate 13, and there are formed metallic film 14 made of Ni, Al capable of bonding through an oxide film 11 on the surface to be bonded on the surface and similarly metallic film 15 of Cr, Ni, Ag having preferable sodering adherence through the film 12 on the surface making contact with the header 1 to scribe it into desired size.
JP5711879A 1979-05-11 1979-05-11 Semiconductor device Pending JPS55150246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5711879A JPS55150246A (en) 1979-05-11 1979-05-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5711879A JPS55150246A (en) 1979-05-11 1979-05-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55150246A true JPS55150246A (en) 1980-11-22

Family

ID=13046619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5711879A Pending JPS55150246A (en) 1979-05-11 1979-05-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55150246A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016066320A1 (en) * 2014-10-31 2016-05-06 Conti Temic Microelectronic Gmbh Leadframe for a semiconductor component, circuit arrangement comprising a leadframe

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396668A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Wire bonding method and auxiliary plate for the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396668A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Wire bonding method and auxiliary plate for the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016066320A1 (en) * 2014-10-31 2016-05-06 Conti Temic Microelectronic Gmbh Leadframe for a semiconductor component, circuit arrangement comprising a leadframe
US10347590B2 (en) 2014-10-31 2019-07-09 Conti Temic Microelectronic Gmbh Leadframe for a semiconductor component

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