JPS5740943A - Semiconductror device - Google Patents

Semiconductror device

Info

Publication number
JPS5740943A
JPS5740943A JP55116597A JP11659780A JPS5740943A JP S5740943 A JPS5740943 A JP S5740943A JP 55116597 A JP55116597 A JP 55116597A JP 11659780 A JP11659780 A JP 11659780A JP S5740943 A JPS5740943 A JP S5740943A
Authority
JP
Japan
Prior art keywords
bonding pad
oxide film
bonding
pad
unevenness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55116597A
Other languages
Japanese (ja)
Inventor
Yuji Kusano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55116597A priority Critical patent/JPS5740943A/en
Publication of JPS5740943A publication Critical patent/JPS5740943A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H01L2224/05558—Shape in side view conformal layer on a patterned surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H01L2224/48453—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To increase the adhesion between a bonding pad and an electrode metal, by a method wherein unevenness is provided at the oxide film located just under the bonding pad of a semiconductor device and the bonding area of the oxide film and the bonding pad is increased. CONSTITUTION:Unevenness 7 is formed on the surface located just under the bonding pad of an oxide film 2 provided on a semiconductor substrate 1 and the bonding pad 52 is provided at the uneven part to bond the pad to an external lead terminal 8. This method increases the bonding area between the oxide film and the bonding pad and improves the adhesion between the bonding pad and the metal electrode.
JP55116597A 1980-08-22 1980-08-22 Semiconductror device Pending JPS5740943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55116597A JPS5740943A (en) 1980-08-22 1980-08-22 Semiconductror device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55116597A JPS5740943A (en) 1980-08-22 1980-08-22 Semiconductror device

Publications (1)

Publication Number Publication Date
JPS5740943A true JPS5740943A (en) 1982-03-06

Family

ID=14691079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55116597A Pending JPS5740943A (en) 1980-08-22 1980-08-22 Semiconductror device

Country Status (1)

Country Link
JP (1) JPS5740943A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57195834U (en) * 1981-06-09 1982-12-11
US5773899A (en) * 1993-09-30 1998-06-30 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Bonding pad for a semiconductor chip
USRE40819E1 (en) 1995-12-21 2009-07-07 Micron Technology, Inc. Semiconductor device with improved bond pads
CN107591359A (en) * 2017-08-15 2018-01-16 深圳市华星光电技术有限公司 The method of adhesiveness between array base palte and preparation method thereof, raising film layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57195834U (en) * 1981-06-09 1982-12-11
US5773899A (en) * 1993-09-30 1998-06-30 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Bonding pad for a semiconductor chip
US5869357A (en) * 1993-09-30 1999-02-09 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Metallization and wire bonding process for manufacturing power semiconductor devices
USRE40819E1 (en) 1995-12-21 2009-07-07 Micron Technology, Inc. Semiconductor device with improved bond pads
CN107591359A (en) * 2017-08-15 2018-01-16 深圳市华星光电技术有限公司 The method of adhesiveness between array base palte and preparation method thereof, raising film layer

Similar Documents

Publication Publication Date Title
JPS6418246A (en) Lead frame for semiconductor device
EP0159797A3 (en) Thyristor device and process for producing it
IE822564L (en) Fabrication a semiconductor device having a phosphosilicate glass layer
JPS5740943A (en) Semiconductror device
JPS5772336A (en) Semiconductor device
JPS56167340A (en) Junction of semicondctor pellet with substrate
JPS56148857A (en) Semiconductor device
GB2022316B (en) Method of fabricating a semiconductor device by bonding together a silicon substrate and electrodes with aluminium
JPS5740942A (en) Semiconductor device
JPS54133877A (en) Semiconductor device
JPS57114263A (en) Semiconductor device
JPS55143045A (en) Semiconductor device
JPS56105670A (en) Semiconductor device
JPS575366A (en) Semiconductor device and manufacture thereof
GB9121604D0 (en) Pressure-contact type semiconductor device
JPS6432682A (en) Optoelectronic semiconductor
JPS57109350A (en) Semiconductor device
JPS5748253A (en) Lead frame for semiconductor device
JPS5676543A (en) Semiconductor element
JPS57159035A (en) Manufacture of semiconductor device
JPS5793538A (en) Semiconductor device
JPS644110A (en) Bonding structure of piezoelectric substrate in saw device
JPS57121239A (en) Semiconductor device
JPS57114277A (en) Semiconductor device
JPS5397367A (en) Semiconductor device and its manufacture