JPS575366A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS575366A
JPS575366A JP8000880A JP8000880A JPS575366A JP S575366 A JPS575366 A JP S575366A JP 8000880 A JP8000880 A JP 8000880A JP 8000880 A JP8000880 A JP 8000880A JP S575366 A JPS575366 A JP S575366A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor device
back surface
manufacture
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8000880A
Other languages
Japanese (ja)
Inventor
Masanori Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8000880A priority Critical patent/JPS575366A/en
Publication of JPS575366A publication Critical patent/JPS575366A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To decrease the grounding lead inductance of a semiconductor device by shortcircuiting between either one electrode of source and drain electrodes and the back surface electrode of the device via a metallic layer or a solder. CONSTITUTION:When a source electrode 2 is grounded to a case, a metallic layer 9 is formed on the side face of a dicing groove 7, a semiconductor substrate 1a is etched from the back surface of the substrate 1 to the vicinity of the groove 7, a metallic electrode 10 is then formed on the back surface, and a semiconductor device is mounted on the case with mounting solder. Thus, the electrode 2 is grounded via the layer 9, the electrode 10 and the mounting solder.
JP8000880A 1980-06-13 1980-06-13 Semiconductor device and manufacture thereof Pending JPS575366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8000880A JPS575366A (en) 1980-06-13 1980-06-13 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8000880A JPS575366A (en) 1980-06-13 1980-06-13 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS575366A true JPS575366A (en) 1982-01-12

Family

ID=13706293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8000880A Pending JPS575366A (en) 1980-06-13 1980-06-13 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS575366A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245537A (en) * 1985-04-23 1986-10-31 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245537A (en) * 1985-04-23 1986-10-31 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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