JPS575366A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS575366A JPS575366A JP8000880A JP8000880A JPS575366A JP S575366 A JPS575366 A JP S575366A JP 8000880 A JP8000880 A JP 8000880A JP 8000880 A JP8000880 A JP 8000880A JP S575366 A JPS575366 A JP S575366A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor device
- back surface
- manufacture
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910000679 solder Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To decrease the grounding lead inductance of a semiconductor device by shortcircuiting between either one electrode of source and drain electrodes and the back surface electrode of the device via a metallic layer or a solder. CONSTITUTION:When a source electrode 2 is grounded to a case, a metallic layer 9 is formed on the side face of a dicing groove 7, a semiconductor substrate 1a is etched from the back surface of the substrate 1 to the vicinity of the groove 7, a metallic electrode 10 is then formed on the back surface, and a semiconductor device is mounted on the case with mounting solder. Thus, the electrode 2 is grounded via the layer 9, the electrode 10 and the mounting solder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8000880A JPS575366A (en) | 1980-06-13 | 1980-06-13 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8000880A JPS575366A (en) | 1980-06-13 | 1980-06-13 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS575366A true JPS575366A (en) | 1982-01-12 |
Family
ID=13706293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8000880A Pending JPS575366A (en) | 1980-06-13 | 1980-06-13 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS575366A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61245537A (en) * | 1985-04-23 | 1986-10-31 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1980
- 1980-06-13 JP JP8000880A patent/JPS575366A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61245537A (en) * | 1985-04-23 | 1986-10-31 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
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