JPS5772336A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5772336A
JPS5772336A JP55148336A JP14833680A JPS5772336A JP S5772336 A JPS5772336 A JP S5772336A JP 55148336 A JP55148336 A JP 55148336A JP 14833680 A JP14833680 A JP 14833680A JP S5772336 A JPS5772336 A JP S5772336A
Authority
JP
Japan
Prior art keywords
pellet
tab
bonding strength
rear surface
fine unevenness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55148336A
Other languages
Japanese (ja)
Inventor
Koichi Kiyozuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55148336A priority Critical patent/JPS5772336A/en
Publication of JPS5772336A publication Critical patent/JPS5772336A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26122—Auxiliary members for layer connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/83051—Forming additional members, e.g. dam structures
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    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/83139—Guiding structures on the body
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
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    • H01L2224/8314—Guiding structures outside the body
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/83141—Guiding structures both on and outside the body
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To contrive the increase of bonding strength of a small pellet in order to prevent separation of the pellet by forming fine unevenness on at least one of the rear surface of the pellet and the surface of a base side member. CONSTITUTION:A pellet 3 having many irregular and fine unevenness 3a on the rear surface is prepared. This pellet 3 is pressed on Ag paste 2 that a conductive adhesive agent previously applied on a tab 1. With the state, said pellet 3 is dried in the temperature range of 100-150 deg.C for about one hour and thereby the pellet 3 is bonded to the tab 1. Hereby, the bonding strength the pellet 3 is improved.
JP55148336A 1980-10-24 1980-10-24 Semiconductor device Pending JPS5772336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148336A JPS5772336A (en) 1980-10-24 1980-10-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148336A JPS5772336A (en) 1980-10-24 1980-10-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5772336A true JPS5772336A (en) 1982-05-06

Family

ID=15450480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148336A Pending JPS5772336A (en) 1980-10-24 1980-10-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772336A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133736A (en) * 1983-12-21 1985-07-16 Fujitsu Ltd Semiconductor device
JPS60176171U (en) * 1984-05-02 1985-11-21 ソ−ド株式会社 Plate capillary column
JPS61151360U (en) * 1985-03-08 1986-09-18
EP0259035A2 (en) * 1986-08-28 1988-03-09 Stc Plc Solder joint between an electrical component and a substrate
EP0525587A1 (en) * 1991-07-29 1993-02-03 Siemens Aktiengesellschaft Field effect controllable semi-conductor device
DE10158754A1 (en) * 2001-11-30 2003-06-18 Osram Opto Semiconductors Gmbh Light emitting semiconductor component, uses conductive adhesive material for joining semiconductor body electrically and thermally to carrier
US6900476B2 (en) 2001-11-30 2005-05-31 Osram Opto Semiconductors Gmbh Light-emitting semiconductor component
JP2011171766A (en) * 2011-05-27 2011-09-01 Seiko Instruments Inc Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133736A (en) * 1983-12-21 1985-07-16 Fujitsu Ltd Semiconductor device
JPS60176171U (en) * 1984-05-02 1985-11-21 ソ−ド株式会社 Plate capillary column
JPS61151360U (en) * 1985-03-08 1986-09-18
EP0259035A2 (en) * 1986-08-28 1988-03-09 Stc Plc Solder joint between an electrical component and a substrate
EP0525587A1 (en) * 1991-07-29 1993-02-03 Siemens Aktiengesellschaft Field effect controllable semi-conductor device
DE10158754A1 (en) * 2001-11-30 2003-06-18 Osram Opto Semiconductors Gmbh Light emitting semiconductor component, uses conductive adhesive material for joining semiconductor body electrically and thermally to carrier
US6784027B2 (en) 2001-11-30 2004-08-31 Osram Opto Semiconductors Gmbh Light-emitting semiconductor component
US6900476B2 (en) 2001-11-30 2005-05-31 Osram Opto Semiconductors Gmbh Light-emitting semiconductor component
JP2011171766A (en) * 2011-05-27 2011-09-01 Seiko Instruments Inc Semiconductor device

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