IE830502L - Photovoltaic device with back reflector - Google Patents

Photovoltaic device with back reflector

Info

Publication number
IE830502L
IE830502L IE830502A IE50283A IE830502L IE 830502 L IE830502 L IE 830502L IE 830502 A IE830502 A IE 830502A IE 50283 A IE50283 A IE 50283A IE 830502 L IE830502 L IE 830502L
Authority
IE
Ireland
Prior art keywords
layer
highly reflective
photovoltaic device
back reflector
tin oxide
Prior art date
Application number
IE830502A
Other versions
IE54573B1 (en
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IE830502L publication Critical patent/IE830502L/en
Publication of IE54573B1 publication Critical patent/IE54573B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

A back reflector for a photovoltaic device includes a layer of highly reflective material (114), such as a highly reflective and conductive metal of copper, gold, silver, or aluminum, or alloys thereof. Between the layer (114) of highly reflective material and the semiconductor regions (116, 118, 120) of the device is a layer (115) of a transparent conductor. The transparent conductor (115) can be, for example, a transparent conductive oxide such as indium tin oxide, cadmium stannate, or doped tin oxide. The reflector is particularly useful with p-i-n type devices formed from fluorine containing amorphous silicon. <IMAGE> [GB2116775A]
IE502/83A 1982-03-18 1983-03-08 Improved back reflector system and devices utilizing same IE54573B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35937182A 1982-03-18 1982-03-18

Publications (2)

Publication Number Publication Date
IE830502L true IE830502L (en) 1983-09-18
IE54573B1 IE54573B1 (en) 1989-11-22

Family

ID=23413524

Family Applications (1)

Application Number Title Priority Date Filing Date
IE502/83A IE54573B1 (en) 1982-03-18 1983-03-08 Improved back reflector system and devices utilizing same

Country Status (15)

Country Link
JP (1) JPS58170075A (en)
AU (1) AU540909B2 (en)
BR (1) BR8301160A (en)
CA (1) CA1245330A (en)
DE (1) DE3308598A1 (en)
FR (1) FR2523768B1 (en)
GB (1) GB2116775B (en)
IE (1) IE54573B1 (en)
IL (1) IL67926A (en)
IN (1) IN161241B (en)
IT (1) IT1160506B (en)
MX (1) MX153416A (en)
NL (1) NL8300925A (en)
SE (1) SE457300B (en)
ZA (1) ZA831342B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171869A (en) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd Photovoltaic device
JPS58171870A (en) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd Photovoltaic device
JPS6034076A (en) * 1983-08-05 1985-02-21 Taiyo Yuden Co Ltd Amorphous silicon solar cell
EP0167231A1 (en) * 1984-05-02 1986-01-08 Energy Conversion Devices, Inc. Photoresponsive device incorporating improved back reflector
DE3502218A1 (en) * 1985-01-24 1986-07-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Solar cell which can be used for photovoltaic solar generators
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
JPH0656883B2 (en) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 Semiconductor device
JPS62259480A (en) * 1986-05-01 1987-11-11 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPH01304786A (en) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp Photogeneration element
JPH0273672A (en) * 1988-09-08 1990-03-13 Fuji Electric Corp Res & Dev Ltd Film photoelectric transfer element
AU650782B2 (en) * 1991-09-24 1994-06-30 Canon Kabushiki Kaisha Solar cell
JP2994812B2 (en) * 1991-09-26 1999-12-27 キヤノン株式会社 Solar cell
JPH0677510A (en) * 1992-08-24 1994-03-18 Canon Inc Photovolatic element
CN1096119C (en) * 1994-10-06 2002-12-11 钟渊化学工业株式会社 Thin film solar cell
US5626687A (en) * 1995-03-29 1997-05-06 The United States Of America As Represented By The United States Department Of Energy Thermophotovoltaic in-situ mirror cell
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US20120318352A1 (en) * 2011-06-14 2012-12-20 General Electric Company Photovoltaic device with reflection enhancing layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907595A (en) * 1971-12-03 1975-09-23 Communications Satellite Corp Solar cells with incorporate metal leyer
US3973994A (en) * 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US3988167A (en) * 1975-03-07 1976-10-26 Rca Corporation Solar cell device having improved efficiency
IT1092849B (en) * 1977-03-28 1985-07-12 Rca Corp PHOTOVOLTAIC DEVICE WITH HIGH ABSORPTION EFFICIENCY
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS55125680A (en) 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
DE2938260A1 (en) * 1979-09-21 1981-03-26 Messerschmitt-Bölkow-Blohm GmbH, 8000 München SEMICONDUCTOR COMPONENT FOR CONVERTING LIGHT TO ELECTRICAL ENERGY

Also Published As

Publication number Publication date
AU540909B2 (en) 1984-12-06
AU1241583A (en) 1984-09-20
IT8319923A0 (en) 1983-03-04
GB2116775A (en) 1983-09-28
SE8301366L (en) 1983-09-19
IN161241B (en) 1987-10-31
GB8306327D0 (en) 1983-04-13
IE54573B1 (en) 1989-11-22
BR8301160A (en) 1983-11-22
CA1245330A (en) 1988-11-22
MX153416A (en) 1986-10-07
IL67926A (en) 1986-04-29
FR2523768B1 (en) 1991-03-29
IL67926A0 (en) 1983-06-15
NL8300925A (en) 1983-10-17
FR2523768A1 (en) 1983-09-23
SE457300B (en) 1988-12-12
ZA831342B (en) 1983-11-30
JPS58170075A (en) 1983-10-06
DE3308598A1 (en) 1983-09-22
SE8301366D0 (en) 1983-03-14
GB2116775B (en) 1986-07-30
IT1160506B (en) 1987-03-11

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Legal Events

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MM4A Patent lapsed